Silicon chip oxidation method

Abstract

The invention discloses a silicon chip oxidation method, and the method comprises the steps: enabling a to-be-oxidized silicon chip to be immersed in liquid; letting ozone into the liquid, and oxidizing the silicon chip through the ozone. According to the invention, because the ozone is not liable to be decomposed in the liquid and is dissolved completely and uniformly, the method irons out the defects of poor stability and uniformity of the ozone in a gaseous state, can improve the oxidation level and uniformity of the ozone, facilitates the improvement of the interface passivation effect of an oxidation layer, and improves the efficiency of a solar cell.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic equipment, and in particular relates to an oxidation method of a silicon wafer. Background technique [0002] In conventional crystalline silicon solar cells, the silicon nitride film is used as an anti-reflection film and passivation film. Silicon nitride contains hydrogen atoms, which can passivate the dangling bonds and recombination centers of the silicon wafer, and act as interface passivation and bulk passivation. However, there is still a certain gap in the interface passivation effect of silicon nitride compared with silicon oxide. In laboratory high-efficiency solar cells, silicon oxide is often prepared by high-temperature thermal oxidation. Achieve better interface passivation, but the high-temperature thermal oxidation process consumes a lot of energy, the temperature is usually at 1000°C, and the speed is slow, the process time is long, and the high-temperature environment has an...

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Problems solved by technology

Specifically, the silicon wafer is placed on the supporting column of the silicon wafer stage of the etching device, and then the lid of the etching chamber is closed, and ozone enters the sealed etching chamber, contacts the surface of the silicon wafer, and oxidizes the surface of the silicon wafer into a dense oxide film. However, this technology has the following disadvantages: due to the poor stability of ozone at normal temperature and pressure, it can be decomposed into oxygen by itself, resulting in a decrease in oxidation performance, and the ozone gas is in direct contact with the silicon wafer during the reaction, and it is sprayed by airflow during gaseous oxidation. Inhomogeneous, so the oxidation level and uniformity of the ozone is not high

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