Method for realizing electron local passivation contact, and crystalline silicon solar cell and preparation method thereof

Abstract

The invention discloses a method for realizing electron local passivation contact. The method comprises the following steps: firstly, preparing a tunneling silicon oxide layer and an amorphous siliconlayer on a crystalline silicon substrate of which a damage layer is removed; then locally covering the amorphous silicon thin film with a phosphorus doping agent; etching off an amorphous silicon thin film layer which does not partially cover a phosphorus dopant region through an alkaline solution, fully crystallizing amorphous silicon into polycrystalline silicon through annealing, activating aphosphorus dopant and finishing redistribution of the phosphorus dopant in the polycrystalline silicon thin film, and finally preparing a metallized layer on the partially phosphorus-doped polycrystalline silicon thin film. Furthermore, the invention also discloses a crystalline silicon solar cell with the electron local passivation contact structure and a corresponding cell preparation method. The method disclosed by the invention is simple in process and relatively low in cost, and has good industrial potential; and the cell provided by the invention is good in front optical performance andlow in metallization recombination, and can obtain higher photon-generated carrier collection probability and less photon-generated carrier transmission loss.

Description

technical field [0001] The invention belongs to the technical field of solar cell preparation, and specifically relates to a method for realizing an electronic local passivation contact structure, and applying the electronic local passivation contact structure to a crystalline silicon solar cell and a corresponding cell preparation method. Background technique [0002] Passivated contact (Tunnel Oxide and Passivated Contact, TOPCon) solar cell is a new type of high-efficiency solar cell, which passivates crystalline silicon solar cells (hereinafter referred to as solar cells or cells) by tunneling silicon oxide and doped polycrystalline silicon. surface, to realize the selective passage of photogenerated carriers, that is, the majority carriers can enter the doped polysilicon film through the tunneling silicon oxide layer without hindrance and then be collected, while the minority carriers are in the tunnel The recombination rate at the interface of the silicon oxide and sil...

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Problems solved by technology

Photolithography belongs to the manufacturing method of semiconductor chips, the cost is high and the preparation steps are cumbersome; and the use of chemical slurry etching to prepare local contact passivation structures also requires doping on the polysilicon layer, preparing masks, printing protective or Etching-type chemical slurry, chemical etching, and mask removal, etc., the preparation steps are cumbersome and the cost is high

It can be seen that using these two commonly used methods to prepare local passivation contact structures requires cumbersome process steps, and the cost of photoresist and chemical etching slurry as consumable materials is also high, resulting in relatively high overall preparation costs, which is why It brings great difficulty to the application of local passivation contact structure

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