Window material for silicon based thin film solar battery and preparing method thereof

A silicon-based thin film, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effect of easy process transfer

Active Publication Date: 2008-09-03
DONGJUN NEW ENERGY CO LTD
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For thin-film solar cells applied to flexible substrates, flexible substrates such as stainless steel or plastic substrates (polyimide) are opaque materials. In order to allow light to enter from the P layer, the structure of the cell needs to be N / I / P, In this way, the relatively mature deposition process corresponding to the preparation of P / I / N structure solar cells on glass substrates will not be well transferred to flexible substrate solar cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Window material for silicon based thin film solar battery and preparing method thereof
  • Window material for silicon based thin film solar battery and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0032] The present invention is aimed at microcrystalline silicon or nano-silicon-based thin-film solar cells where sunlight is incident from the N direction of the solar cell, and proposes key N-type window materials in the structure of silicon-based thin-film cells and its preparation method. The specific implementation methods are as follows:

[0033] Prepare silicon-based thin-film solar cells on substrates by using plasma-enhanced chemical vapor deposition (PECVD), hot-wire chemical vapor deposition (HW-CVD), very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) and other deposition methods .

Embodiment

[0035] based on figure 1 with figure 2 The preparation of P / I / N type on a flexible or rigid substrate and the preparation of N / I / P type thin film solar cells on a transparent flexible or rigid substrate as shown, taking the PECVD method as an example, introduces the deposition of N-type microcrystals Silicon oxide (μc-SiO:H) functional material is used as the window material of the silicon-based thin film solar cell of the present invention, and the specific preparation process is as follows:

[0036] 1. For figure 1 , will have the sample of substrate S, metal M, transparent conductive film T1, boron-doped silicon-based film P, intrinsic silicon-based film I; or for figure 2 , put the sample with substrate S and transparent conductive film T1 into the PECVD deposition system, the background vacuum is higher than 10 -4 support;

[0037] 2. Control the reaction deposition parameters to deposit microcrystalline silicon oxide film on the above samples;

[0038] In step 2, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical conductivityaaaaaaaaaa
electrical conductivityaaaaaaaaaa
Login to view more

Abstract

The present invention discloses windows material for silicone base thin film solar battery and manufacture method thereof. The windows material is phosphorus with silicone base thin film N, which includes phosphorus with N type micro crystal silica thin film, or phosphorus with N type nano silica. The preparing of the windows material is that put the sample to be processed in the deposition system, the deposition is taken as the phosphorus doped silicon base thin film N of the windows material for silicone base thin film solar cell on the intrinsic silicone base thin film I of the sample to be processed or the transparent conductive film T1. The present invention provides a windows layer material for the novel silicone base thin film solar cell novel silicone base thin film solar cell uses micro crystal silicone base or nano silicone base thin film material electric and hole mobility with the characteristic of same magnitude, provides a windows layer material for a novel silicone base thin film solar cell, producing the P / I / N type thin film solar cell on non-transparent or transparent substrate, can also produce N / I / P type thin film solar cell on the transparent substrate, the technique boost flexibly and obtain good battery efficiency more easily.

Description

【Technical field】 [0001] The invention relates to the field of thin-film solar cells, in particular to a window material for silicon-based thin-film solar cells and a preparation method thereof. 【Background technique】 [0002] Solar cells convert solar energy directly into electricity. Large-scale photovoltaic power generation can solve the energy problems of residents in the vast central and western regions of my country without electricity in the near future, and make these areas get out of the energy dilemma. In the long run, to make photovoltaic power generation truly an important part of the future energy system, the key is to achieve its performance / price ratio comparable to conventional energy. According to the basic national conditions of our country, in order to realize the future goal of solar cells serving the national economy, reducing the cost of solar cells and realizing the thin film of solar cells has been set as the main direction for the development of sol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/075H01L31/18
CPCY02E10/548Y02P70/50
Inventor 张晓丹赵颖魏长春孙建耿新华熊绍珍
Owner DONGJUN NEW ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products