Method for carrying out control over phosphorous doping concentration through combination of pre-oxidation mode and low temperature-high temperature-low temperature variable-temperature diffusion mode

A phosphorus-doped, low-temperature technology, applied in the field of solar cells, can solve problems such as the inability to obtain improved cell conversion efficiency, single temperature gradient setting method, and unessentially optimized PN junction characteristics, etc., to achieve good PN junction characteristics, good The uniformity of square resistance and the effect of improving conversion efficiency

Active Publication Date: 2014-07-23
JA SOLAR TECH YANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the common three-step variable temperature diffusion process is only a simple split of the single-step diffusion process, and the temperature gradient setting method is a single temperature rise, specifically as Figure 1-2 As shown in , although the uniformity of the square resistance plays a certain role in improving, the characteristics of the PN junction have not been essentially optimized, and it is impossible to obtain a significant improvement in the conversion efficiency of the battery.

Method used

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  • Method for carrying out control over phosphorous doping concentration through combination of pre-oxidation mode and low temperature-high temperature-low temperature variable-temperature diffusion mode
  • Method for carrying out control over phosphorous doping concentration through combination of pre-oxidation mode and low temperature-high temperature-low temperature variable-temperature diffusion mode
  • Method for carrying out control over phosphorous doping concentration through combination of pre-oxidation mode and low temperature-high temperature-low temperature variable-temperature diffusion mode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Such as image 3 As shown, taking polysilicon wafer as an example:

[0027] (1) Put the textured silicon wafer into the boat, and at a low temperature of 750°C, feed 2000 sccm / min oxygen and 15000 sccm / min nitrogen for pre-oxidation, and the oxidation time is 7 minutes;

[0028] (2) Under the condition of temperature control at 750°C, 800 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 200 sccm / min of oxygen are fed for deposition and diffusion pushing for 20 minutes;

[0029] (3) Raise the temperature to 825°C, feed 900 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 300 sccm / min of oxygen for deposition, diffusion and pushing, and the time is 15 minutes;

[0030] (4) Cool down to 765 °C, feed 900 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 300 sccm / min of oxygen for deposition, diffusion and pushing, and the time is 7 minutes;

[00...

Embodiment 2

[0037] Such as image 3 As shown, taking polysilicon wafer as an example:

[0038] (1) Put the textured silicon wafer into the boat, and at a low temperature of 750°C, feed 2000 sccm / min oxygen and 15000 sccm / min nitrogen for pre-oxidation, and the oxidation time is 7 minutes;

[0039] (2) Under the condition of temperature control at 770°C, 750 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 200 sccm / min of oxygen are fed for deposition and diffusion pushing for 20 minutes;

[0040] (3) Raise the temperature to 830°C, feed 800sccm / min small nitrogen carrying phosphorus source, 15000sccm / min large nitrogen and 300sccm / min oxygen for deposition, diffusion and push junction, and the time is 15min;

[0041] (4) Cool down to 790 ℃, feed 800sccm / min of small nitrogen carrying phosphorus source, 15000sccm / min of large nitrogen and 300sccm / min of oxygen to deposit, diffuse and push the junction, and the time is 7min;

[0042] (5) Carry ou...

Embodiment 3

[0044] Such as image 3 As shown, taking polysilicon wafer as an example:

[0045] (1) Put the textured silicon wafer into the boat, and at a low temperature of 750°C, feed 2000 sccm / min oxygen and 15000 sccm / min nitrogen for pre-oxidation, and the oxidation time is 7 minutes;

[0046] (2) Under the condition of temperature control at 750°C, 700 sccm / min of small nitrogen carrying phosphorus source, 16000 sccm / min of large nitrogen and 200 sccm / min of oxygen are fed for deposition and diffusion pushing for 25 minutes;

[0047] (3) Raise the temperature to 825°C, feed 800 sccm / min of small nitrogen carrying phosphorus source, 16000 sccm / min of large nitrogen and 300 sccm / min of oxygen for deposition, diffusion and pushing, and the time is 17 minutes;

[0048](4) Cool down to 765 ℃, feed 800sccm / min of small nitrogen carrying phosphorus source, 16000sccm / min of large nitrogen and 300sccm / min of oxygen for deposition, diffusion and pushing, and the time is 9 minutes;

[0049] (...

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Abstract

The invention discloses a method for carrying out control over the phosphorous doping concentration through the combination of a pre-oxidation mode and a low temperature-high temperature-low temperature variable-temperature diffusion mode. According to the method, a pre-oxidation process and a low temperature-high temperature-low temperature three-step variable-temperature diffusion process are included; according to the processes, the phosphorous doping concentration gradient can be accurately controlled by optimizing the temperature gradient, a good PN junction can be obtained, high sheet resistance uniformity can be achieved, and conversion efficiency of a solar cell is improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a method for controlling phosphorus doping concentration by adopting a pre-oxygenation combined with a low temperature-high temperature-low temperature variable temperature diffusion method. Background technique [0002] At present, phosphorus diffusion process is usually used to prepare PN junction in traditional solar cell manufacturing. The performance of PN junction directly affects the conversion efficiency of the cell, and the pros and cons of the diffusion process play a key role. With the continuous improvement of the conversion efficiency of polycrystalline silicon cells, shallow junctions with high square resistance have become the main development direction, and the diffusion process has also developed from a single-step constant temperature diffusion to a three-step variable temperature diffusion. High diffusion square resistance can reduce the surface...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/22
CPCH01L21/02658H01L21/223H01L31/1804Y02E10/547Y02P70/50
Inventor 赵永乐王传红闫用用李积伟
Owner JA SOLAR TECH YANGZHOU
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