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A method of controlling phosphorus doping concentration by using pre-oxidation combined with low temperature-high temperature-low temperature variable temperature diffusion method

A phosphorus-doped, low-temperature technology, applied in the field of solar cells, can solve problems such as PN junction burn-through leakage, poor square resistance uniformity, and single temperature gradient setting method, and achieve improved conversion efficiency, good square resistance uniformity, and good PN The effect of junction properties

Active Publication Date: 2016-05-04
JA SOLAR TECH YANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High diffusion square resistance can reduce the surface recombination rate, improve the effective minority carrier life and the short-wave response of the battery, but at the same time it will also lead to poor square resistance uniformity, local PN junction burn-through leakage, and high control accuracy requirements for equipment , and the three-step variable temperature diffusion process can effectively improve the uniformity of square resistance and improve the stability of the process
[0003] However, the common three-step variable temperature diffusion process is only a simple split of the single-step diffusion process, and the temperature gradient setting method is a single temperature rise, specifically as Figure 1-2 As shown in , although the uniformity of the square resistance plays a certain role in improving, the characteristics of the PN junction have not been essentially optimized, and it is impossible to obtain a significant improvement in the conversion efficiency of the battery.

Method used

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  • A method of controlling phosphorus doping concentration by using pre-oxidation combined with low temperature-high temperature-low temperature variable temperature diffusion method
  • A method of controlling phosphorus doping concentration by using pre-oxidation combined with low temperature-high temperature-low temperature variable temperature diffusion method
  • A method of controlling phosphorus doping concentration by using pre-oxidation combined with low temperature-high temperature-low temperature variable temperature diffusion method

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Such as image 3 As shown, taking polysilicon wafer as an example:

[0027] (1) Put the textured silicon wafer into the boat, and at a low temperature of 750°C, feed 2000 sccm / min oxygen and 15000 sccm / min nitrogen for pre-oxidation, and the oxidation time is 7 minutes;

[0028] (2) The temperature is controlled at 750°C, and 800 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 200 sccm / min of oxygen are fed for deposition and diffusion push junction for 20 minutes;

[0029] (3) Raise the temperature to 825°C, feed 900 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 300 sccm / min of oxygen for deposition, diffusion and pushing, and the time is 15 minutes;

[0030] (4) Cool down to 765°C, feed 900 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 300 sccm / min of oxygen for deposition, diffusion and push junction, and the time is 7 minutes;

[...

Embodiment 2

[0038] Such as image 3 As shown, taking polysilicon wafer as an example:

[0039] (1) Put the textured silicon wafer into the boat, and at a low temperature of 750°C, feed 2000 sccm / min oxygen and 15000 sccm / min nitrogen for pre-oxidation, and the oxidation time is 7 minutes;

[0040] (2) The temperature is controlled at 770°C, and 750 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 200 sccm / min of oxygen are fed for deposition and diffusion push junction for 20 minutes;

[0041] (3) Raise the temperature to 830°C, feed 800 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 300 sccm / min of oxygen for deposition, diffusion and push junction, and the time is 15 minutes;

[0042] (4) Cool down to 790°C, feed 800 sccm / min of small nitrogen carrying phosphorus source, 15000 sccm / min of large nitrogen and 300 sccm / min of oxygen for deposition, diffusion and push junction, and the time is 7 minutes...

Embodiment 3

[0045] Such as image 3 As shown, taking polysilicon wafer as an example:

[0046] (1) Put the textured silicon wafer into the boat, and at a low temperature of 750°C, feed 2000 sccm / min oxygen and 15000 sccm / min nitrogen for pre-oxidation, and the oxidation time is 7 minutes;

[0047] (2) Under the condition of temperature control at 750°C, 700 sccm / min of small nitrogen carrying phosphorus source, 16000 sccm / min of large nitrogen and 200 sccm / min of oxygen are fed for deposition and diffusion pushing for 25 minutes;

[0048] (3) Raise the temperature to 825°C, feed 800 sccm / min of small nitrogen carrying phosphorus source, 16000 sccm / min of large nitrogen and 300 sccm / min of oxygen for deposition and diffusion push junction, and the time is 17 minutes;

[0049](4) Cool down to 765°C, feed 800 sccm / min of small nitrogen carrying phosphorus source, 16000 sccm / min of large nitrogen and 300 sccm / min of oxygen for deposition, diffusion and push junction, and the time is 9 minute...

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Abstract

The invention discloses a method for controlling phosphorus doping concentration by adopting pre-oxidation combined with low temperature-high temperature-low temperature variable temperature diffusion method. The method includes pre-oxidation and low temperature-high temperature-low temperature three-step variable temperature diffusion process. Optimizing the temperature gradient can precisely control the phosphorus doping concentration gradient, obtain good PN junction and square resistance uniformity, and improve the conversion efficiency of solar cells.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a method for controlling phosphorus doping concentration by adopting a pre-oxygenation combined with a low temperature-high temperature-low temperature variable temperature diffusion method. Background technique [0002] At present, phosphorus diffusion process is usually used to prepare PN junction in traditional solar cell manufacturing. The performance of PN junction directly affects the conversion efficiency of the cell, and the pros and cons of the diffusion process play a key role. With the continuous improvement of the conversion efficiency of polycrystalline silicon cells, shallow junctions with high square resistance have become the main development direction, and the diffusion process has also developed from a single-step constant temperature diffusion to a three-step variable temperature diffusion. High diffusion square resistance can reduce the surface...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/22
CPCH01L21/02658H01L21/223H01L31/1804Y02E10/547Y02P70/50
Inventor 赵永乐王传红闫用用李积伟
Owner JA SOLAR TECH YANGZHOU
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