Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

N-type casting policrystalline silicon with uniform doping resistivity and preparation method thereof

A technology of resistivity and casting method, applied in the field of solar cell materials, can solve the problems of low utilization rate of high-efficiency solar cell materials, large axial variation range of resistivity of N-type phosphorus-doped polysilicon ingots, etc., and achieves easy large-scale application. , the effect of improving the utilization rate and reducing the manufacturing cost

Active Publication Date: 2012-07-11
ZHEJIANG UNIV
View PDF7 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a method for preparing N-type cast silicon polycrystalline with uniform doping resistivity, which can control the resistivity of at least 90% of N-type phosphorus-doped polycrystalline silicon ingots within the range of 1.0-2.0Ω.cm, Solved the problem of large axial variation range of resistivity of N-type phosphorus-doped polysilicon ingot and low utilization rate of high-efficiency solar cell materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N-type casting policrystalline silicon with uniform doping resistivity and preparation method thereof
  • N-type casting policrystalline silicon with uniform doping resistivity and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] First put 53.04mg of phosphorus and 1.74g of gallium into the bottom of the crucible, then put 240kg of high-purity electronic-grade polysilicon into the quartz crucible and load it into the furnace. Under the protection of argon, melt the polysilicon material at 1410°C to melt phosphorus and gallium into the polysilicon solution, lift the heat preservation cover in the furnace at a speed of 2mm / min, and blow cooling gas into the bottom of the crucible at the same time to exchange heat for the silicon melt It mainly occurs at the bottom of the crucible, and the polysilicon ingot is grown by directional solidification. Sampling at different parts of the growing polysilicon ingot, and then testing the axial distribution of the resistivity of the growing polysilicon ingot by the four-probe method, as shown in the attached figure 1 shown. It can be seen that the resistivity of about 90% of the polysilicon ingots is distributed in the range of 1.0-2.0Ω.cm. Therefore, the u...

Embodiment 2

[0026] First put 45.46mg of phosphorus and 2.49g of gallium into the bottom of the crucible, and then put 240kg of metallurgical-grade boron-phosphorus compensation silicon material (containing 2.35mg of boron and 30.29mg of phosphorus in total) into the crucible. Under the protection of argon, melt the polysilicon material at 1410°C to melt phosphorus and gallium into the polysilicon solution, lift the heat preservation cover in the furnace at a speed of 5mm / min, and blow cooling gas into the bottom of the crucible at the same time, and heat exchange of the silicon melt It mainly occurs at the bottom of the crucible and grows polysilicon ingots through directional solidification. Samples were taken at different parts of the grown polycrystalline silicon ingot, and then the axial distribution of the resistivity of the grown polycrystalline silicon ingot was tested by the four-probe method, as shown in the attached figure 2 shown. It can be seen that the resistivity of about ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses an N-type casting policrystalline silicon with a uniform doping resistivity and a preparation method thereof. The preparation method comprises the following steps of: mixing a polycrystalline silicon material, a phosphorus doping agent and gallium; then fusing; and growing a polycrystalline silicon body by using a casting method. According to the N-type casting policrystalline silicon with the uniform doping resistivity, the resistivity of about 90% N-type phosphorus doping phosphorus doping cast ingots can be controlled in the range of 1.0-2.0 omega.cm, therefore, the utilization rate of the N-type polycrystalline silicon crystal in the process of manufacturing an efficient solar cell is beneficially improved, the manufacturing cost of the efficient solar cell is remarkably lowered, the preparation method is simple to operate and easy to popularize and use in the photovoltaic industry.

Description

technical field [0001] The invention belongs to the field of solar cell materials, and in particular relates to an N-type cast silicon polycrystal with uniform doping resistivity and a preparation method thereof. Background technique [0002] Solar energy is an inexhaustible and inexhaustible clean energy. Using the photoelectric conversion characteristics of semiconductor materials, it can be prepared into solar cells, which can convert solar energy into electrical energy. In the last ten years, the output of solar cells has grown at an annual rate of 30-40%, and the solar industry has become one of the fastest growing industries in the market today. [0003] Cast polysilicon is one of the main materials for making solar cells, which currently accounts for about 50% of the photovoltaic market. In traditional solar photovoltaic technology, boron-doped P-type cast polysilicon is widely used in the preparation of solar cells. However, under light, boron-doped P-type cast pol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 余学功肖承全杨德仁
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com