48results about How to "Avoid Particle Contamination" patented technology

A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.

A new and improved method for the probing of integrated circuits (ICs) and is particularly suitable for probing various elements of an IC for failure analysis or other electrical testing and/or measurement of the IC. The method includes providing a probe access trench in the IMD (intermetal dielectric) or other substrate adjacent to the circuit element to be tested and then providing direct electrical contact between the test probe and the sidewall of the element through the trench, during the testing process. Such direct electrical contact between the test probe and the sidewall of the element prevents excessively high contact resistance which may otherwise occur in the use of a probing pad between the test probe and the element.

A coating and developing system is capable of preventing the contamination of a substrate with particles while the same coats a surface of a substrate with a resist film and develops the resist film after the substrate has been processed by immersion exposure. The coating and developing system includes: a processing block including coating units for forming a resist film on a surface of a substrate and developing units for processing the resist film formed on the substrate with a developer, and an interface block connected to the processing block and an exposure system for carrying out an immersion exposure process. The interface block includes: substrate cleaning units for cleaning the substrate processed by the immersion exposure process, a first carrying mechanism and a second carrying mechanism. The first carrying mechanism carries a substrate processed by immersion exposure to the substrate cleaning unit. The second carrying mechanism carries the substrate cleaned by the substrate cleaning unit. Thus the contamination of the substrate with external particles can be prevented and hence the spread of contamination with particles over the processing units of the processing block and substrates processed by the processing units can be prevented.

A structure of package comprises a die placed on printed circuit board. A glass substrate is adhered on an adhesive film pattern to form an air gap area between the glass substrate and the chip. Micro lens are disposed on the chip. A lens holder is fixed on printed circuit board. The glass substrate can prevent the micro lens from particle contamination.

The present invention provides an image sensor module. The image sensor module has a die formed on a substrate, the die having a micro lens area, a lens holder formed on the substrate and over the die, a lens formed in the lens holder. A filter is formed within the lens holder and between the lens and the die, and at least one passive device formed on the substrate and covered within the lens holder. Conductive bumps or LGA (leadless grid array) are formed on the bottom surface of the substrate.

A method of defining a gate structure for a MOSFET device featuring the employment of dual anti-reflective coating (ARC) layers to enhance gate structure resolution, and featuring a dry procedure for removal of all ARC layers avoiding the use of hot phosphoric acid, has been developed. After formation of a polysilicon layer on an underlying silicon dioxide gate insulator layer, a capping silicon oxide, a dielectric ARC layer, and an overlying organic ARC layer are deposited. A photoresist shape is formed and used as an etch mask to allow a first anisotropic RIE procedure to define the desired gate structure shape in the dual ARC layers and in the capping silicon oxide layer. After removal of the photoresist shape and the overlying organic ARC layer a second anisotropic RIE procedure is used to define a desired polysilicon gate structure, with the second anisotropic RIE procedure also resulting in the removal of the dielectric ARC shape. A final hydrofluoric acid type solution is then used to remove the capping silicon oxide shape as well as to remove the portions of the silicon dioxide gate insulator layer not covered by the polysilicon gate structure.

A polishing apparatus for polishing a surface of a workpiece includes a housing unit, a partition wall partitioning an interior of the housing unit into a first chamber and a second chamber, a polishing section disposed in the first chamber and having a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring positioned above the turntable for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, and a cleaning section disposed in the second chamber and cleaning the workpiece which has been polished. The polishing apparatus further includes a transferring device for transferring the workpiece which has been polished from the polishing section to the cleaning section through an opening and an exhaust system for exhausting ambient air from each of the polishing section and cleaning section separately and independently.

A system for in-situ plasma treatment. The system has a processing chamber, e.g., plasma chamber. The system has a first susceptor coupled within the chamber and a second susceptor facing the first susceptor and being within the chamber. The system has one or more power sources. Preferably, a first power source is characterized by a first frequency. The first power source is coupled to the first susceptor and the second susceptor. A second power source is characterized by a second frequency. The second power source is coupled to the first susceptor and the second susceptor. A switching device is coupled to the first power source and is coupled the second power source. The switching device is configured to selectively apply the first frequency to the first susceptor while the second frequency is applied to the second susceptor and is alternatively configured to selectively apply the first frequency to the second susceptor while the second frequency is applied to the first susceptor.

The method of forming image sensor protection comprises attaching a glass on a tape and scribing the glass with lines to define cover zones on the glass, the glass is then break by a rubber puncher followed by forming glue on the edge of the cover zones. The glass is bonded on a wafer with an image sensor to align the cover zones to a micron lens area of the image sensor, and then the tape is removed from the wafer, thereby forming glass with cover zones on the image sensor.

By using a rare earth metal having a minimal content of impurity metal element, machining it into a member and cleaning with an organic acid-base capping agent, there is obtained a rare earth metal member composed entirely of a rare earth metal and containing not more than 100 ppm of impurity metal element in a sub-surface zone, which member is characterized by a high surface purity, a large grain size, minimized grain boundaries, and improved halogen resistance or corrosion resistance.

In a substrate processing method, a substrate to be processed is mounted on a mounting table in a processing chamber of a substrate processing apparatus, and while heating the substrate by a heating unit through the mounting table to a processing temperature of 700° C. or higher, the substrate is processed. The substrate to be processed is loaded into the processing chamber, a first preliminary heating is performed until the substrate reaches a prescribed temperature while being mounted on the mounting table. Then, substrate supporting pins of the mounting table are elevated, and a second preliminary heating is performed in a state where the substrate is held on the substrate supporting pins. Then, the substrate supporting pins are moved down to mount the substrate on the mounting table and a process such as plasma oxidation is performed thereon.

Screws 4 are inserted from a bottom surface of a ceiling plate 32 and screwed to a base plate 31, and the ceiling plate 32 and the base plate 31 are press-connected to each other by an elastic restoring force of an elastic member 51 interposed between a head of the screw 4 and the ceiling plate 32. A gap is formed between the head and the ceiling plate 32. Further, a periphery of the head is covered with a cover via a ring-shaped elastic member 52. In another embodiment, a periphery of a base plate 31 is protruded from a periphery of a ceiling plate 32, and the protruded portion of the base plate 31 and a ring-shaped clamp positioned at an outer side of the ceiling plate 32 are joined by screws. Here, an elastic member is interposed between the clamp and the ceiling plate 32.

An edge exposure apparatus performing an exposure process on an edge portion of a wafer having a coating film (resist film) formed thereon includes position detection means for detecting positional data of an outer edge of a wafer held by a spin chuck, an exposure portion for performing an exposure process on the edge portion of the wafer, a development nozzle supplying a developer to the exposed region, and alignment means for horizontally moving the spin chuck. An exposure process is performed by the exposure portion on the edge portion of the wafer held by the spin chuck while the alignment means is controlled, based on the positional data of the outer edge of the wafer which is detected by the position detection means, such that the positional relation between the outer edge of the wafer and the exposure portion is kept constant.

The invention provides a de-edged super back seal layer structure for a silicon wafer. The structure comprises a silicon dioxide back seal layer, wherein the silicon dioxide back seal layer is covered on the back surface of the silicon wafer; and a polycrystalline silicon back seal layer, wherein the polycrystalline silicon back seal layer is covered on the outer side of the silicon dioxide back seal layer and covers the back surface of the silicon wafer, a back surface slope edge area and an edge area. According to the de-edged super back seal layer structure for the silicon wafer, the positive surface slope edge of the silicon wafer only has monocrystalline silicon serving as a body material, and has a high-quality smooth surface, which hardly has no difference with a polished surface. The monocrystalline silicon layer is grown on the positive surface slope edge and the polished surface of the silicon wafer during epitaxy, so that seamless connection can be realized, stratification phenomenon does not occur, the problems of particle pollution, edge dislocation and pyramid in epitaxy are also solved, and process yield rate is improved.

A ball valve for use in the pressure acid leaching of nickel ores is disclosed. The valve has a valve body and a ball centrally positioned in the valve body, which has a central passage rotatable in the valve body between open and closed positions. At least one seat is disposed between the ball and the valve body. The ball and seat each comprise a titanium substrate and an ultrafine or nanostructured titania coating. The titania can include from 5 to 45 volume percent of a second phase material that is immiscible with the titania and exhibits corrosion resistance.

The invention provides a drug delivery system in which a drug or another active substance is delivered from the surface of an inactive, placebo carrier. The system uses a placebo tablet carrier having a concavity or multiple concavities in the top surface for receiving a drug. After manufacture of the placebo tablet carrier, a dosage of the drug in liquid or semisolid form is deposited in the concavity and solidifies as a dot or disk on the tablet surface. Thus, the drug is carried on the surface of the tablet and is not part of the tablet bulk. The drug delivery system is particularly useful for delivery of low dose (i.e. potent) drugs, for delivery of multiple doses of a drug, or for delivery of multiple types of drugs. Additionally, the invention provides methods for preparation of the inventive drug delivery systems.

The present invention relates to a device for processing a component, comprising: a travel carriage having a frame which defines an axis of translation along which the travel carriage is translationally movable, a bogie which is relatively rotatably connected to the frame and to which the component is attachable, a first translation-permanent magnet device which is mounted on the frame and having permanent magnets, a rotation-permanent magnet device attached to the bogie and having permanent magnets, and a carriage-side longitudinal guide means mounted on the frame, a stationary travel carriage guide device having a guide-side longitudinal guide means, a first electromagnet translation device with electromagnets which magnetically interact with the permanent magnets of the first translation-permanent magnet device, a first rotation-electromagnet device having electromagnets which magnetically interact with the permanent magnets of the rotation-permanent magnet device, and a controller connected to the first translating electromagnet device and to the first rotation-electromagnet device to control its electromagnets to control the translational movement of the travel carriage and the rotational movement of the bogie.