De-edged super back seal layer structure for silicon wafer and manufacturing method thereof

Abstract

The invention provides a de-edged super back seal layer structure for a silicon wafer. The structure comprises a silicon dioxide back seal layer, wherein the silicon dioxide back seal layer is covered on the back surface of the silicon wafer; and a polycrystalline silicon back seal layer, wherein the polycrystalline silicon back seal layer is covered on the outer side of the silicon dioxide back seal layer and covers the back surface of the silicon wafer, a back surface slope edge area and an edge area. According to the de-edged super back seal layer structure for the silicon wafer, the positive surface slope edge of the silicon wafer only has monocrystalline silicon serving as a body material, and has a high-quality smooth surface, which hardly has no difference with a polished surface. The monocrystalline silicon layer is grown on the positive surface slope edge and the polished surface of the silicon wafer during epitaxy, so that seamless connection can be realized, stratification phenomenon does not occur, the problems of particle pollution, edge dislocation and pyramid in epitaxy are also solved, and process yield rate is improved.

Description

technical field [0001] The invention relates to the fields of semiconductors and material production applications, in particular to a super back-seal layer structure with edge-cutting for silicon wafers and a manufacturing method thereof. Background technique [0002] The back seal design of the silicon wafer has an important impact on the subsequent epitaxial process. Improper back seal design will cause problems such as self-doping and abnormal growth of silicon slag on the back, resulting in the loss of the yield of the epitaxial process. [0003] Super back seal is a kind of back seal technology developed in recent years. figure 1 with figure 2 Shown is a common silicon wafer super back seal design with edge removal treatment, the inner layer is a silicon dioxide back seal layer, and the outer layer is a polysilicon back seal layer. This design has a more obvious effect on solving the problems of self-doping and abnormal growth of silicon slag on the back surface duri...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a super back-sealing layer structure with edge removal for silicon wafers and its manufacturing method that solves the problems of particle contamination, edge stacking faults, and pyramids caused by delamination.

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