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Substrate Processing Apparatus and Reaction Container

a technology of substrate and processing apparatus, which is applied in the direction of coatings, chemical vapor deposition coatings, electric discharge tubes, etc., can solve the problems of adversely affecting the flow velocity of gas

Inactive Publication Date: 2008-10-16
KONTANI TADASHI +10
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This solution ensures uniform gas supply to substrates, enhancing film formation uniformity and processing efficiency by maintaining consistent flow rates and velocities across all substrates, regardless of their position.

Problems solved by technology

However, if the gas flow rates are equalized by adjusting the opening areas, the gas flow velocities are adversely varied depending upon the size of the opening area.
However, if the capacity of the gas nozzle itself is increased to such a size that the gas pressure in the gas nozzle 101 is not affected by the gas injecting amount, since there is limitation in space of the reaction chamber which accommodates the gas nozzle, this is not practical.

Method used

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  • Substrate Processing Apparatus and Reaction Container
  • Substrate Processing Apparatus and Reaction Container
  • Substrate Processing Apparatus and Reaction Container

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

Embodiment Using CVD Method for Film Forming Process

[0107]FIG. 2A is a schematic lateral sectional view of the reaction tube in the vertical type substrate processing apparatus according to this embodiment, and FIG. 2B is a vertical sectional view taken along a line a-a′ in FIG. 2A.

[0108]In FIG. 2A, a heater 16 is provided on an outer periphery of the reaction tube 6 which is a vertical type reaction chamber. A plurality of wafers 7 as substrates to be processed are stacked and placed in the reaction tube 6. In an arc space between the wafers 7 and an inner wall of the reaction tube 6, a buffer chamber 17 is provided on an inner wall of the reaction tube 6 from its lower portion to its upper portion along a stacking direction of the wafers 7. Buffer chamber holes 3 as gas-supply openings are provided in an end of a wall of the buffer chamber 17 which is adjacent to the wafer 7. The buffer chamber holes 3 are opened toward a center of the reaction tube 6.

[0109]An end of the buffer ch...

second embodiment

Embodiment Using ALD Method for Film Forming Process

[0135]An embodiment for forming films by the ALD method will be explained concretely.

[0136]When films are formed on the wafers 7 by the ALD method also, the above-described vertical type substrate processing apparatus can be used. In the case of the ALD method, however, if it is required to activate the processing gas by plasma or the like, an apparatus and an operation required for this process are added.

[0137]A case for forming films by the ALD method will be explained below using FIGS. 5A, 5B and 5C and FIG. 6.

[0138]FIGS. 5A, 5B and 5C show, from a side, an outward appearance and the inside of the reaction tube which is the reaction chamber in the vertical type substrate processing apparatus of the invention used for forming films by the ALD method. FIG. 6 is a lateral sectional view taken along a line A-A.

[0139]FIG. 5A shows the outward appearance of the reaction chamber. FIGS. 5B and C are vertical sectional views of the react...

fifth embodiments

Third to Fifth Embodiments

Different Embodiments Using ALD Method for Film Forming Process

[0186]FIG. 7 is a lateral sectional view of a reaction tube of a vertical type substrate processing apparatus according to a third embodiment of the present invention.

[0187]The reaction tube 6 shown in FIG. 7 has the same structure as that shown in FIG. 6. In FIG. 6, the electrode for producing plasma is disposed in the buffer chamber 17. In FIG. 7, an ultraviolet lamp 54 for activating gas and a reflection plate 58 for preventing ultraviolet from radiating out from the buffer chamber 17 are provided in combination.

[0188]Reaction gas is activated by light energy of the lamp 54.

[0189]The processing gas which is brought into the active species in the buffer chamber 17 having the above structure is injected toward the wafers 7 from the buffer chamber holes 3, and films are formed on the wafers 7 by the ALD method.

[0190]FIG. 8 is a lateral sectional view of a reaction tube of a vertical type substra...

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Abstract

A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Description

[0001]This application is a Continuation of co-pending application Ser. No. 10 / 406,279, filed on Apr. 4, 2003, the entire contents of which are hereby incorporated by reference and for which priority is claimed under 35 U.S.C. § 120.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a substrate processing apparatus and a reaction container, more particularly, to a substrate processing apparatus and a reaction container used in one step of producing process of a semiconductor device for processing a substrate in a reaction chamber, and more particularly, to an improvement of a gas introducing portion which supplies gas to a substrate.[0004]2. Description of the Related Art[0005]A conventional technique for processing a substrate in a reaction chamber by a CVD (Chemical Vapor Deposition) method or an ALD (Atomic Layer Deposition) method will be briefly explained with reference to FIG. 14 while taking a vertical type substrate processing ap...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/455C23C16/54C23C16/44C23C16/452C23C16/458H01J37/32
CPCC23C16/452C23C16/45542H01J37/3244C23C16/45578C23C16/4583C23C16/45546
Inventor KONTANI, TADASHITOYODA, KAZUYUKISATO, TAKETOSHIKAGAYA, TORUSHIMA, NOBUHITOISHIMARU, NOBUOSAKAI, MASANORIOKUDA, KAZUYUKIYAGI, YASUSHIWATANABE, SEIJIKUNII, YASUO
Owner KONTANI TADASHI
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