Electrode for plasma processing apparatus, plasma processing apparatus, plasma processing method and storage medium

Abstract

The present invention provides an upper electrode used in an etching apparatus and the etching apparatus including the upper electrode, both of which can properly reduce intensity of electric field of plasma around a central portion of a substrate to be processed, thus enhancing in-plane uniformity of a plasma process. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. A dielectric supply passage configured for supplying the dielectric into the space and a dielectric discharge passage configured for discharging the dielectric from the space are connected with the space, respectively. With such configuration, the dielectric can be controllably supplied into the recess, such that in-plane distribution of the intensity of the electric field can be uniformed, corresponding to in-plane distribution of the intensity of the electric field of the plasma generated under various process conditions, such as a kind of each wafer that will be etched, each processing gas that will be used, and the like.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is based on the prior Japanese Patent Application No. 2008-50745 filed on Feb. 29, 2008 and U.S. Provisional Patent Application No. 61 / 71556 filed on May 6, 2008, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to an upper electrode, a table (or lower electrode), a plasma processing apparatus including at least one of the upper electrode and table, a plasma processing method and a storage medium, each used for processing a substrate to be processed, such as a semiconductor wafer or the like, to which a plasma process is provided.[0004]2. Background Art[0005]In a step for manufacturing semiconductor devices, for example, a dry etching process, an ashing process and the like has been known, as the plasma process for processing the substrate by changing a processing gas into plasma. In an etching apparatus for perf...

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Benefits of technology

[0037]Alternatively, the present invention is a storage medium for storing therein a computer program for driving a computer to execute a plasma processing method, wherein the plasma processing method uses a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for containing the upper electrode and the lower electrode therein, and a first high frequency power source connected with the lower electrode and used for generating plasma, wherein the upper electrode and the lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of: supplying a dielectric into a dielectric injection space formed in the upper electrode; placing a substrate on the table; supplying a processing gas into the processing vessel; and changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to perform a plasma process to the substrate with the plasma, wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.

[0038]Alternatively, the present invention is a storage medium for storing therein a computer program for driving a computer to execute a plasma processing method, wherein the plasma processing method uses a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for storing the upper electrode and the lower electrode therein, a first high frequency power source connected with either one of the upper electrode and the lower electrode and used for generating plasma, and a second high frequency power source connected with the lower electrode and used for introducing ions present in the plasma, wherein the upper electrode and the lower electrode are arranged to be opposed to each other, and wherein the plasma processing method comprises the steps of: supplying a dielectric into a dielectric injection space formed in the upper electrode; placing a substrate on the table; supplying a processing gas into the processing vessel; and changing the processing gas into the plasma between the upper electrode and the lower electrode, so as to perform a plasma process to the substrate with the plasma, wherein the step of supplying the dielectric is performed for controlling a supply amount of the dielectric, such that in-plane uniformity of intensity of an electric field of the plasma can be enhanced, as compared with the case in which the dielectric is not supplied into the dielectric injection space.

[0039]Alternatively, the present invention is a storage medium for storing therein a computer program for driving a computer to execute a plasma processing method, wherein the plasma processing method uses a plasma processing apparatus including an upper electrode, a table constituting a lower electrode, a processing vessel configured for containing the upper electrode and lower electrode therein, and a first high frequency power source connected with the lower elec...

Problems solved by technology

However, such an extremely high frequency of the electric power applied to the apparatus may tend to considerably increase intensity of an electric field around a central portion of a surface of the electrode, i.e., a region corresponding to a central portion of the wafer, while relative...

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