Polishing agent and method for polishing substrate using the polishing agent

A technique for abrasives and abrasives, which is applied in the direction of polishing compositions containing abrasives, grinding machines, grinding devices, etc., and can solve the problems of reduced mechanical action and reduced grinding speed.

Active Publication Date: 2011-04-13
株式会社力森诺科
View PDF5 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this problem, try to reduce the average particle size of the cerium oxide particles of the above-mentioned abrasive using cerium oxid

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing agent and method for polishing substrate using the polishing agent
  • Polishing agent and method for polishing substrate using the polishing agent
  • Polishing agent and method for polishing substrate using the polishing agent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0160] Prepare chitosan 500 (manufactured by Wako Pure Chemical Industries, Ltd.; viscosity is 500 mPa·s when 0.5% chitosan is dissolved in 0.5% acetic acid aqueous solution) containing 1% by weight, 0.3% by weight of acetic acid and 98.7% by weight Concentrated additive solution of water. 10 g of the concentrated additive solution, 100 g of the concentrated cerium hydroxide slurry obtained above, and 390 g of water were mixed, and a 5% by weight aqueous solution of imidazole was added until the pH value was 5.6 to prepare an abrasive.

[0161] The average particle diameter was 100 nm, and the zeta potential was +44 mV. Here, the average particle diameter and zeta potential were measured in the same manner as above.

Embodiment 2

[0163] Concentration of 1% by weight of Chitosan 50 (manufactured by Wako Pure Chemical Industries, Ltd., 0.5% chitosan, 0.5% acetic acid aqueous solution with a viscosity of 50 mPa·s), 0.3% by weight of acetic acid and 98.7% by weight of water was prepared. Add liquid. 10 g of the concentrated additive solution, 100 g of the concentrated cerium hydroxide slurry obtained above, and 390 g of water were mixed, and a 5% by weight aqueous solution of imidazole was added until the pH value was 5.6, thereby preparing an abrasive.

Embodiment 3

[0165] Prepare 1% by weight of chitosan 5 (manufactured by Wako Pure Chemical Industries, Ltd., the viscosity of an aqueous solution of 0.5% chitosan and 0.5% acetic acid is 5 mPa·s), 0.3% by weight of acetic acid and 98.7% by weight of water. Additives were concentrated. 10 g of the concentrated additive solution, 100 g of the concentrated cerium hydroxide slurry obtained above, and 390 g of water were mixed, and a 5% by weight aqueous solution of imidazole was added until the pH value was 5.6, thereby preparing an abrasive.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
The average particle sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Viscosityaaaaaaaaaa
Login to view more

Abstract

Disclosed is a polishing agent comprising water, particles of a tetravalent metal hydroxide, and an additive. The additive contains at least one of a cationic polymer and a polysaccharide. In a CMP technique for flattening an insulating film, the polishing agent can polish the insulating film at a high speed without causing significant polishing flaws and has a high polishing speed ratio between a silicon oxide film and a stopper film. Also disclosed are a polishing agent set for storing the polishing agent and a method for polishing a substrate using the polishing agent.

Description

technical field [0001] The present invention relates to an abrasive, an abrasive assembly when storing the abrasive, and a method for polishing a substrate using the abrasive. The abrasive is used in a substrate surface planarization process as a semiconductor element manufacturing technology, especially shallow trench isolation insulation. film, pre-metal insulating film, interlayer insulating film, etc. Background technique [0002] In the manufacturing process of semiconductor devices in recent years, the importance of processing technology for increasing density and miniaturization has been increasing. One of them, CMP (Chemical Mechanical Polishing: chemical mechanical polishing) technology, in the manufacturing process of semiconductor elements, is the formation of shallow trench isolation, the planarization of insulating film or interlayer insulating film before metal plating, plug and embedded Technology necessary for the formation of metal wiring. [0003] Convent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/304B24B37/00C09K3/14B24B37/04
CPCC09K3/1463H01L21/31053H01L21/30625C09G1/02B24B37/044C09K3/14H01L21/304B24B37/00H01L21/31055H01L21/76224
Inventor 星阳介龙崎大介小山直之野部茂
Owner 株式会社力森诺科
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap