Polishing agent and method for polishing substrate using the polshing agent

A technology of abrasives and additives, which is applied in the field of abrasives and substrate grinding using the abrasives, and can solve the problems of reduced mechanical action and reduced grinding speed.

Active Publication Date: 2012-11-07
RESONAC CORP
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this problem, try to reduce the average particle size of the cerium oxide particles of the above-mentioned abrasive using cerium oxide, but when the average particle size decreases, the mechanical action decreases, so there is a problem that the polishing rate decreases.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing agent and method for polishing substrate using the polshing agent
  • Polishing agent and method for polishing substrate using the polshing agent
  • Polishing agent and method for polishing substrate using the polshing agent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0161] Chitosan 500 containing 1% by weight (manufactured by Wako Pure Chemical Industries, Ltd., viscosity when 0.5% of chitosan is dissolved in 0.5% acetic acid aqueous solution is 500 mPa·s), 0.3% by weight of acetic acid and 98.7% by weight Concentrated additive solution of water. 10 g of the concentrated additive solution, 100 g of the concentrated cerium hydroxide slurry obtained above, and 390 g of water were mixed, and a 5% by weight aqueous solution of imidazole was added until the pH value was 5.6 to prepare an abrasive.

[0162] The average particle diameter was 100 nm, and the zeta potential was +44 mV. Here, the average particle diameter and zeta potential were measured in the same manner as above.

Embodiment 2）

[0164] Prepare a concentrated solution containing 1% by weight of Chitosan 50 (manufactured by Wako Pure Chemical Industries, Ltd., 0.5% chitosan, 0.5% acetic acid aqueous solution has a viscosity of 50 mPa·s), 0.3% by weight of acetic acid, and 98.7% by weight of water. Add liquid. 10 g of the concentrated additive solution, 100 g of the concentrated cerium hydroxide slurry obtained above, and 390 g of water were mixed, and a 5% by weight aqueous solution of imidazole was added until the pH value was 5.6 to prepare an abrasive.

Embodiment 3）

[0166] Prepare 1% by weight of chitosan 5 (manufactured by Wako Pure Chemical Industries, Ltd., the viscosity of an aqueous solution of 0.5% chitosan and 0.5% acetic acid is 5 mPa·s), 0.3% by weight of acetic acid, and 98.7% by weight of water. Additives were concentrated. 10 g of the concentrated additive solution, 100 g of the concentrated cerium hydroxide slurry obtained above, and 390 g of water were mixed, and a 5% by weight aqueous solution of imidazole was added until the pH value was 5.6 to prepare an abrasive.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
viscosityaaaaaaaaaa
viscosityaaaaaaaaaa
viscosityaaaaaaaaaa
Login to view more

Abstract

The invention provides a polishing agent and a method for polishing substrate using the polishing agent. The polishing agent comprises: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.

Description

[0001] The present invention is a branch of the invention application with the application number 2009801142670 (international application number PCT / JP2009 / 057956), the application date is April 22, 2009, and the invention title is "abrasive and substrate grinding method using the same". case application. technical field [0002] The present invention relates to an abrasive, an abrasive assembly when storing the abrasive, and a method for polishing a substrate using the abrasive. The abrasive is used in a substrate surface planarization process as a semiconductor element manufacturing technology, especially shallow trench isolation insulation. film, pre-metal insulating film, interlayer insulating film, etc. Background technique [0003] In the manufacturing process of semiconductor devices in recent years, the importance of processing technology for increasing density and miniaturization has been increasing. One of them is CMP (Chemical Mechanical Polishing: chemical mech...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14B24B37/04H01L21/3105
CPCC09G1/02B24B37/044H01L21/30625H01L21/31053C09K3/1463C09K3/14H01L21/304B24B37/00H01L21/31055H01L21/76224
Inventor 星阳介龙崎大介小山直之野部茂
Owner RESONAC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap