Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution

A sapphire substrate and mechanical polishing technology, which is applied to polishing compositions containing abrasives, grinding machine tools, grinding devices, etc., can solve the problems of low polishing efficiency, complicated polishing process, and reduced processing efficiency, and achieve improved polishing rate, High quality, guaranteed uniform results

Inactive Publication Date: 2012-02-08
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the selected silica sol is used as a polishing abrasive, so the polishing efficiency is low
[0020] The above polishing liquids all use a single polishing abrasive silica sol. Since the Mohs hardness of silica sol is smaller than that of sapphire, the effect of mechanical grinding in the polishing process is reduced, so the efficiency of sapphire substrate polishing is not very high.
[0021] In summary, although various existing polishing methods and polishing solutions can reduce the surface roughne

Method used

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  • Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution
  • Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution
  • Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution

Examples

Experimental program
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Example Embodiment

[0044] Example 1:

[0045] A polishing liquid for thermal chemical mechanical polishing of sapphire substrate material is composed of a composite abrasive, a pH composite regulator, a surface active agent, a dispersant and deionized water.

[0046] Polishing solution configuration: Take 200g of silica sol with a particle size of 300nm, 5ml of polydiethanol ether and 3ml of polyethylene glycol 200, mix them and dilute to 1000ml with deionized water to form an abrasive suspension, and then take the particle size of 100nm Diamond powder 50g, the diamond powder is slowly added to the above-mentioned abrasive suspension and quickly stirred until uniform. Take the mixed solution of strong organic base tetramethylammonium hydroxide and weak organic base dihydroxyethyl ethylenediamine as the pH regulator (volume ratio 4:1), and adjust the pH to 8.

[0047] The realization of the polishing process: polishing on a UNIPOL-1260-TCMP single-sided polishing machine, the polishing disk is a cast i...

Example Embodiment

[0050] Example 2:

[0051] A polishing liquid for thermal chemical mechanical polishing of sapphire substrate material is composed of a composite abrasive, a pH composite regulator, a surface active agent, a dispersant and deionized water.

[0052] Polishing solution configuration: Take 200g of silica sol with a particle size of 200nm, 3ml of lauryl glycol ether and 4ml of polyethylene glycol 400, mix them and dilute with deionized water to 1000ml to form an abrasive suspension, then take 70 g of diamond powder with a particle size of 80 nm, the diamond powder is slowly added to the above-mentioned abrasive suspension and quickly stirred until uniform. Choose the organic strong base hydroxylamine and the organic weak base dihydroxyethyl ethylenediamine as the pH regulator (volume ratio 4:1), and adjust the pH to 9.

[0053] The realization of the polishing process: polishing on a UNIPOL-1260-TCMP single-sided polishing machine, the polishing disk is a cast iron disk, the lower polis...

Example Embodiment

[0056] Example 3:

[0057] A polishing liquid for thermal chemical mechanical polishing of sapphire substrate material is composed of a composite abrasive, a pH composite regulator, a surface active agent, a dispersant and deionized water.

[0058] Polishing solution configuration: Take 200g of a mixture of cerium oxide and zirconium oxide with a particle size of 200nm, 2ml of silane polydiethanol ether and 3ml of polyethylene glycol 200, mix them and dissolve them with deionized water to 1000ml to form an abrasive suspension, and then take A total of 50 g of diamond powder and corundum powder with a particle size of 100 nm are added. The mixture of diamond powder and corundum powder is slowly added to the aforementioned abrasive suspension and quickly stirred until uniform. Choose the mixed liquid of strong organic base tetramethylammonium hydroxide and weak organic base diethylene triamine as the ph value regulator (volume ratio is 5:1), and adjust the ph value to 10.

[0059] The...

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Abstract

The invention relates to a thermochemistry mechanical polishing method of a sapphire substrate material; a polishing disk is heated in the polishing process; the temperature of the polishing disk is 30 DEG C-100 DEG C; a polishing solution adopted in the polishing method comprises a compound abrasive material, a pH compound conditioning agent, a surface active agent, a dispersing agent and deionized water, wherein the compound abrasive material is formed by mixing particles of a hard abrasive material and a soft abrasive material; the pH compound conditioning agent comprises organic strong base and organic weak base; and the pH value of the polishing solution is 8-13. The thermochemistry mechanical polishing method has the advantages: in the polishing process, the cast ion polishing disk is heated to promote a reaction rate between the polishing solution and the sapphire substrate material, thereby improving the polishing efficiency; problems such as surface scratch, subsurface cracks and the like can be avoided by using the compound abrasive material in the polishing solution so as to obtain surface characteristics of high quality and high evenness; meanwhile, the polishing efficiency is considered; and the polishing solution also has the advantages that the stability is high, equipment is not corroded, washing is easy and the like.

Description

technical field [0001] The invention relates to the technical field of microelectronic auxiliary materials and processing technology, in particular to a thermochemical mechanical polishing method and polishing liquid for sapphire substrate materials. Background technique [0002] Sapphire integrates excellent optical, physical and chemical properties. It has the same optical properties, mechanical properties, thermal properties, electrical properties and dielectric properties as natural gemstones, and is chemically stable and corrosion-resistant. The Mohs hardness reaches 9. , second only to the hardness of diamond. Due to its excellent properties, sapphire has been widely used in national defense, scientific research, industry and other fields. In its many applications, due to the small lattice constant mismatch rate between sapphire and GaN, it is the most important at this stage. One of GaN thin film epitaxial substrates. Because GaN is known as the third-generation sem...

Claims

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Application Information

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IPC IPC(8): B24B37/00C09G1/02
Inventor 张楷亮张涛峰王芳任君苗银萍
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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