Method for processing quartz resonator wafer

A technology of quartz resonators and processing methods, applied in piezoelectric/electrostrictive/magnetostrictive devices, impedance networks, electrical components, etc. Too consistent, the spread of the quartz wafer is not very good, etc., to achieve the effect of good parallelism, guaranteed strength, and good parallelism

Active Publication Date: 2018-06-29
TANGSHAN GUOXIN JINGYUAN ELECTRONICS CO LTD
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  • Abstract
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Problems solved by technology

However, in the traditional quartz wafer etching process, the spread of the quartz wafer is not very good, there is overlap between the wafers, and the parallelism is not good, resulting in inconsistent corrosion of the etched surface of the wafer, which can only meet ordinary quartz with a base frequency of 55MHz and below. The processing requirements of wafers cannot meet the processing requirements of high fundamental frequency wafers

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  • Method for processing quartz resonator wafer
  • Method for processing quartz resonator wafer
  • Method for processing quartz resonator wafer

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Embodiment Construction

[0039] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples serve to illustrate the invention.

[0040] First, prepare the corrosion solution, the preparation steps of the corrosion solution are as follows:

[0041] a. Prepare ammonium fluoride solution: take container A and mix according to the weight ratio of ammonium fluoride and deionized water 1:1.35, and stir evenly;

[0042] b. Prepare hydrofluoric acid solution: Take container B and add deionized water first, then add hydrofluoric acid, the weight ratio of deionized water and hydrofluoric acid is 1:0.27, and then the ammonium fluoride solution and the solution in container B are in volume ratio 1:2 mix;

[0043] c. Preparation of surface stripping agent: perfluorooctane sulfonate ammonium: isopropanol: deionized water according to the weight ratio of 1:0.7:2 to prepare the surface st...

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PUM

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Abstract

The invention discloses a method for processing a quartz resonator wafer. The quartz wafer is processed by the following steps: I, plating a metal film, namely totally plating chromium on a wafer board by using a film plating machine, plating gold, and finally depositing the gold on the surface of the wafer board in a film form, wherein the vacuum degree of the film plating machine is 0.35-0.45Pa,the sputtering power of the gold is 0.65kW, and the sputtering power of chromium is 0.4kW; II, performing spray gluing; III, performing soft baking; IV, performing mask alignment and exposure; V, baking after exposure; VI, developing; VII, performing hard baking; VIII, removing the metal film; IX, performing BOE corrosion; X, removing photoresist; XI, repeating the steps II-VIII; XII, splitting;and XIII, etching, and cleaning, namely placing the wafer into an etching machine, etching by an etching solution, flushing and drying. According to the method disclosed by the invention, the mechanical grinding wafer thickness limit of 30 microns is broken through, the power is about 55MHz, and the etching effect is excellent.

Description

technical field [0001] The invention relates to the technical field of wafer processing, in particular to a processing method for a quartz resonator wafer. Background technique [0002] In the existing quartz wafer processing, the frequency limit for batch and stable production by mechanical grinding is about 55 MHz with the fundamental wave starting, and the thickness of the quartz wafer is 30 μm. If it is desired to use an AT-type quartz crystal to obtain a frequency greater than the above-mentioned limit, it is necessary to use a high-order vibration vibration mode. [0003] Therefore, in order to obtain high frequencies, it is necessary to use complex circuits to control vibration modes such as third harmonics. However, it still cannot meet the characteristic requirements of high-frequency traction. The higher the frequency of the quartz wafer, the higher the requirement for parallelism. However, in the traditional quartz wafer etching process, the spread of the quart...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/332H03H9/19
CPCH03H9/19H10N30/082
Inventor 周荣伟郑玉南狄建兴
Owner TANGSHAN GUOXIN JINGYUAN ELECTRONICS CO LTD
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