Double edge total dose resistant radiation reinforcement pattern construction preventing edge electricity leakage

Abstract

The invention discloses an anti-total dose radiation double-edge hardened layout structure which prevents edge electric leakage. The layout structure comprises an active region, an implantation region as well as a field oxide region and a field oxide gate which are outside the active region, overlap section of the active region and the implantation region form a source region and a drain region; the gate is a double-edge structure the two sides of which is beyond the active region, the gate separates the source region from the drain region, the region covered by the gate between the source region and the drain region is a channel region, and a non-implantation active region is arranged between the channel region and the field oxide region which is covered by the gate. The anti-total dose radiation double-edge hardened layout structure can suppress parasitic leakage on device edges caused by the total dose radiation effect with less area cost, and realizes high integration level.

Description

technical field [0001] The invention relates to a layout structure, in particular to a total dose radiation-reinforced layout structure Background technique [0002] figure 1 A plan view of a standard conventional transistor 11 is shown. Transistor 11 comprises an injection region 111, an active region 13, a gate 16 (hereinafter referred to as gate 16), and the overlapping part (herein, active region part) of implantation region 111 and active region 13 is divided into three parts by gate 16. The part covered by the gate is the channel region 112, and the remaining parts on both sides of the gate are respectively the source region 14 and the drain region 15 of the transistor. The active region 13 defines a thin oxide region, and the part outside the active region is the thick oxide region 12 . When the transistor is working, whether the substrate (or well) of the channel region 112 is controlled by the voltage of the gate 16 is inversion. When the substrate is inversion, ...

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Problems solved by technology

Between the source region 34 and the drain region 35 there is only gate oxide under the gate 36, which is a thin oxide layer, which can eliminate the field oxygen path between the source region 34 and the drain region 35 of the device, and solve the problem of edge leakage, but this structure device The area is large, the source and drain regions are asymmetrical, and the shape is irregular, which brings a lot of inconvenience to design and modeling

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