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Silicon carbide ceramic and preparation method thereof

A silicon carbide ceramic and silicon carbide technology, which is applied in the field of ceramic materials, can solve the problems of reduced oxidation resistance and damage of silicon dioxide protective film, and achieves the effects of small change in quality, improved oxidation resistance, and reduced oxygen diffusion.

Active Publication Date: 2018-08-28
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a method for preparing silicon carbide ceramics, which solves the technical problem in the prior art that the silicon dioxide protective film formed after oxidation of liquid-phase sintered silicon carbide ceramics is destroyed, resulting in a decrease in its oxidation resistance

Method used

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  • Silicon carbide ceramic and preparation method thereof
  • Silicon carbide ceramic and preparation method thereof
  • Silicon carbide ceramic and preparation method thereof

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preparation example Construction

[0032] The invention provides a method for preparing silicon carbide ceramics, which solves the technical problem in the prior art that the silicon dioxide protective film of the silicon carbide ceramics is destroyed during liquid phase sintering, resulting in a decrease in its oxidation resistance. The silicon carbide ceramic prepared by the method has high density and good oxidation resistance, and can be widely used in the fields of machinery, chemical industry, microelectronics, automobile, petroleum and processing.

[0033] A silicon carbide ceramic provided by the present invention and its preparation method will be further described below.

Embodiment 1

[0035] (1) Silicon carbide (SiC) powder, alumina (Al 2 o 3 ) powder and diyttrium trioxide (Y 2 o 3 ) powder is mixed as the basic raw material to obtain SiC-Al 2 o 3 -Y 2 o 3 Mix powder. SiC-Al 2 o 3 -Y 2 o 3 The mixed powder is mixed with tantalum diboride (TaB) at a volume ratio of 85:15 2 ) powder mixed and dissolved in ethanol to silicon nitride (Si 3 N 4 ) balls as the ball milling medium, milled on a planetary ball mill at a speed of 300r / min for 8h, after wet mixing and drying, a uniform SiC-Al 2 o 3 -Y 2 o 3 -TaB 2 Mix powder.

[0036] (2) SiC-Al 2 o 3 -Y 2 o 3 -TaB 2 The mixed powder is sieved and granulated to obtain SiC-Al 2 o 3 -Y 2 o 3 -TaB 2 Pellet balls.

[0037] (3) SiC-Al 2 o 3 -Y 2 o 3 -TaB 2 Pour the granulation ball into a hot-pressed graphite mold, and start to pressurize when the temperature rises to 1400°C at a heating rate of 10°C / min in an argon atmosphere of 1 atm. When the pressure is increased to 30Mpa, the tempera...

Embodiment 2

[0039] (1) SiC powder with a mass ratio of 90:6:4, Al 2 o 3 Powder and Y 2 o 3 The powder is mixed as the basic raw material to obtain SiC-Al 2 o 3 -Y 2 o 3 Mix powder. SiC-Al 2 o 3 -Y 2 o 3 Mixed powder and TaB2 The powder is mixed at a volume ratio of 90:10 and dissolved in ethanol to form silicon nitride (Si 3 N 4 ) balls as the ball milling medium, milled on a planetary ball mill at a speed of 300r / min for 8h, after wet mixing and drying, a uniform SiC-Al 2 o 3 -Y 2 o 3 -TaB 2 Mix powder.

[0040] (2) SiC-Al 2 o 3 -Y 2 o 3 -TaB 2 The mixed powder is sieved and granulated to obtain SiC-Al 2 o 3 -Y 2 o 3 -TaB 2 Pellet balls.

[0041] (3) SiC-Al 2 o 3 -Y 2 o 3 -TaB 2 Pour the granulation ball into a hot-pressed graphite mold, and start to pressurize when the temperature rises to 1400°C at a heating rate of 10°C / min in an argon atmosphere of 1 atm. When the pressure is increased to 30Mpa, the temperature reaches 1800°C, and the temperature is k...

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Abstract

The invention relates to the field of ceramic materials, in particular to a silicon carbide ceramic and a preparation method thereof. The preparation method of the silicon carbide ceramic provided bythe invention comprises the following steps: step one, mixing silicon carbide powder, aluminum oxide powder and Re2O3 powder to obtain silicon carbide-aluminum oxide-Re2O3 mixed powder; step two, mixing the silicon carbide-aluminum oxide-Re2O3 mixed powder with tantalum diboride powder to obtain silicon carbide-aluminum oxide-Re2O3-tantalum diboride mixed powder; and step three, pelleting and sintering the silicon carbide-aluminum oxide-Re2O3-tantalum diboride mixed powder to obtain the silicon carbide ceramic. The silicon carbide ceramic solves the technical problem that the oxidation resistance is reduced due to the fact that a silicon dioxide protective film generated after a liquid-phase sintered silicon carbide ceramic is oxidized in the prior art is broken. The silicon carbide ceramic obtained by the method is high in compactness and high in oxidation resistance, and can be widely applied to the fields of mechanical engineering, chemical engineering, micro-electronics, automobiles, petroleum, processing and the like.

Description

technical field [0001] The invention relates to the field of ceramic materials, in particular to a silicon carbide ceramic and a preparation method thereof. Background technique [0002] Silicon carbide ceramics have the advantages of high temperature resistance, corrosion resistance, thermal shock resistance, wear resistance and good thermal conductivity. It is widely used in aerospace, nuclear energy, machinery, chemical industry, microelectronics, automobile, petroleum and processing and other fields. [0003] Silicon carbide ceramics can be used in harsh high-temperature environments, mainly because a dense silicon dioxide film can be formed on its surface, which has good oxidation resistance. However, since silicon carbide is a compound with strong covalent bonds, its self-diffusion coefficient at high temperature is very low, making it difficult to sinter densely without adding sintering aids or even in solid-state sintering. Therefore, the existing method usually re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/622C04B35/645
CPCC04B35/575C04B35/622C04B2235/3217C04B2235/3224C04B2235/3225C04B2235/3813C04B2235/6562C04B2235/6565C04B2235/658C04B2235/9684
Inventor 郭伟明曾令勇牛文彬林华泰
Owner GUANGDONG UNIV OF TECH
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