Manufacturing method of stress sensor based on nanorod diode piezoelectric effect

Abstract

The invention discloses a manufacturing method of a stress sensor based on the nanorod diode piezoelectric effect. The method comprises the steps that an n-type layer, a multi-quantum-well active area and a p-type layer sequentially grow on a substrate, and a nanometer small ball array is assembled on the upper surface of the p-type layer; the nanometer small ball array is adopted as a mask, an LED structure is etched, the etching depth makes contact with the n-type layer, and a nanorod LED array is formed; transparent materials fill the gaps among the nanorod LED array; a metal conductive layer deposits on the surface of the nanorod LED array; part of the n-type layer is exposed through etching, and an n-type electrode and a p-type electrode are manufactured on the upper surface of the exposed n-type layer and the metal conductive layer through a metal evaporation method; a transparent rigid base plate is pressed on the part, not provided with the p-type electrode, of the surface of the metal conductive layer; the n-type electrode and the p-type electrode are communicated, and manufacturing of the stress sensor is finished.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a stress sensor based on the piezoelectric effect of a nanocolumn diode. Background technique [0002] In the heteroepitaxial nanopillar semiconductor diode array, because of the piezoelectric effect, there is a large piezoelectric field, which will tilt the diode energy band, narrow the effective bandwidth, and red-shift the luminous wavelength. The piezoelectric electric field changes with the external pressure. That is to say, under the change of external pressure, the effective bandwidth of the quantum well in the active region will be made, so that the wavelength and color of the light emitted by the diode will also change with the external pressure, so that the magnitude of the external stress can be observed intuitively, so that Realize the alarm function. For example, it is applied to the weight limit alarm of passing vehicles on the bridge...

AI Technical Summary

Problems solved by technology

[0002] In the heteroepitaxy nanopillar semiconductor diode array, because of the piezoelectric effect, there is a large piezoelectric field, which will tilt the energy band of the diode, narrow the effective bandwidth, and red-shift the luminous wavelength.

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