Manufacture method of array substrate, array substrate and display device
A technology of array substrates and substrates, which is applied in the manufacture of array substrates, array substrates and display devices, can solve the problems of increased manufacturing costs during manufacturing time, achieve the effects of reducing signal delay, reducing process time, and improving display quality
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0091] Method Example 1
[0092] Step S11, providing a substrate, and forming gate lines, gate electrodes and gate pads on the substrate;
[0093] First, sputtering, thermal evaporation or other film forming methods can be used to form a gate metal layer on a glass substrate or other type of transparent substrate. The gate metal layer can be made of chromium (Cr), molybdenum (Mo), aluminum (Al), Copper (Cu), tungsten (W), neodymium (Nd) and their alloys, and the gate metal layer can be one or more layers; then, a photoresist is formed on the gate metal layer; secondly, a patterned The mask plate exposes and develops the photoresist to form a photoresist mask; again, the photoresist mask is used to etch the gate metal layer to form patterns of gate lines, gate electrodes and gate pads; finally, Strip the remaining photoresist. It should be noted that, in this step, when the patterns of the gate line, the gate electrode and the gate pad are formed, a common electrode line may also ...
Example Embodiment
[0120] Method Example 2
[0121] Step S21, providing a substrate, and forming gate lines, gate electrodes and gate pads on the substrate;
[0122] First, sputtering, thermal evaporation or other film forming methods can be used to form a gate metal layer on a glass substrate or other type of transparent substrate. The gate metal layer can be made of chromium (Cr), molybdenum (Mo), aluminum (Al), Copper (Cu), tungsten (W), neodymium (Nd) and their alloys, and the gate metal layer can be one or more layers; then, a photoresist is formed on the gate metal layer; secondly, a patterned The mask plate exposes and develops the photoresist to form a photoresist mask; again, the photoresist mask is used to etch the gate metal layer to form patterns of gate lines, gate electrodes and gate pads; finally, Strip the remaining photoresist. It should be noted that, in this step, when the patterns of the gate line, the gate electrode and the gate pad are formed, a common electrode line may also ...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap