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Phosphorus diffusion method for producing affinage metallurgy polycrystalline silicon solar battery

A solar cell and phosphorus diffusion technology, which is applied in the final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of poor battery reliability, low photoelectric conversion efficiency of solar cells, and large leakage current of solar cells, so as to reduce density , The method is simple and easy to implement, and the effect of good application prospects

Active Publication Date: 2009-07-29
CSI CELLS CO LTD +2
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  • Summary
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, practical application shows that when using the above-mentioned traditional process to process refined metallurgical polysilicon, on the one hand, the photoelectric conversion efficiency of the solar cell obtained is low; on the other hand, the leakage current of the solar cell obtained is large, and the reliability of the cell is poor

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A phosphorus diffusion method for manufacturing refined metallurgical polycrystalline silicon solar cells, comprising the steps of:

[0029] (1) A group of P-type refined metallurgical-grade polysilicon wafers (400 pieces) after texturing and cleaning were heat-treated in a nitrogen atmosphere at 800°C for 25 minutes; the nitrogen flow rate was 9L / min;

[0030] (2) Oxidize the silicon wafer after the above treatment in a mixed atmosphere of nitrogen and oxygen at 900°C for 20 minutes to form a 5 nm oxide layer on the surface; the flow rate of nitrogen gas is 8 L / min, and the flow rate of oxygen gas is 0.2 L / min;

[0031] (3) Diffusion was carried out with a phosphorus source at 850°C for 25 minutes, so that the surface sheet resistance was 40 ohms and the junction depth was 0.4 microns;

[0032] (4) Carry out drive-in treatment for 40 minutes in a mixed atmosphere of nitrogen and oxygen at 880°C; the nitrogen flow rate is 8L / min, and the oxygen flow rate is 0.1L / min;

...

Embodiment 2

[0047] A phosphorus diffusion method for manufacturing refined metallurgical polycrystalline silicon solar cells, comprising the steps of:

[0048] (1) A group of P-type refined metallurgical-grade polysilicon wafers (400 pieces) after texturing and cleaning were heat-treated in a nitrogen atmosphere at 750°C for 30 minutes; the nitrogen flow rate was 6L / min;

[0049] (2) Oxidize the silicon wafer after the above treatment in a mixed atmosphere of nitrogen and oxygen at 920° C. for 15 minutes to form a 5 nm oxide layer on the surface; the flow rate of nitrogen gas is 6 L / min, and the flow rate of oxygen gas is 0.3 L / min;

[0050](3) Diffusion with a phosphorus source at 850°C for 30 minutes, so that the surface sheet resistance is 35 ohms and the junction depth is 0.4 microns;

[0051] (4) Carry out drive-in treatment in a mixed atmosphere of nitrogen and oxygen at 800°C for 90 minutes; the nitrogen flow rate is 6L / min, and the oxygen flow rate is 0.2L / min

[0052] (5) Finall...

Embodiment 3

[0066] A phosphorus diffusion method for manufacturing refined metallurgical polycrystalline silicon solar cells, comprising the steps of:

[0067] (1) A group of P-type refined metallurgical-grade polysilicon wafers (400 pieces) after texturing and cleaning were heat-treated in a nitrogen atmosphere at 700°C for 40 minutes; the nitrogen flow rate was 12L / min;

[0068] (2) Oxidize the silicon wafer after the above treatment in a mixed atmosphere of nitrogen and oxygen at 1000°C for 15 minutes to form an oxide layer of 10 nanometers on the surface; the flow rate of nitrogen gas is 6L / min, and the flow rate of oxygen gas is 0.05L / min;

[0069] (3) Diffusion was carried out with a phosphorus source at 900°C for 18 minutes, so that the surface sheet resistance was 32 ohms and the junction depth was 0.6 microns;

[0070] (4) Carry out drive-in treatment in a mixed atmosphere of nitrogen and oxygen at 800°C for 100 minutes; the nitrogen flow rate is 9L / min, and the oxygen flow rate ...

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Abstract

The invention discloses a phosphorus diffusion method for manufacturing a refined polycrystalline silicon solar cell. The method comprises the following 5 steps of: thermal treatment, oxidation treatment, phosphorus diffusion, drive-in treatment and heat preservation. Then the phosphorus diffusion treatment of a refined polycrystalline silicon slice is finished. The phosphorus diffusion method can reduce leakage current of the silicon solar cell and improve the reliability of the cell.

Description

technical field [0001] The invention relates to a diffusion junction process for manufacturing solar cells, in particular to a phosphorus diffusion method for manufacturing refined metallurgical polycrystalline silicon solar cells. Background technique [0002] A solar cell is a semiconductor device capable of converting light energy of sunlight into electrical energy. Because it does not need water, oil, gas or fuel, it can generate electricity as long as there is light. It can be called a clean, pollution-free renewable energy source and is favored by people. Solar cells are mainly made on the basis of semiconductor materials, and their working principle is that photoelectric conversion reactions occur after photoelectric materials absorb light energy to generate current. [0003] Silicon solar cells are widely used at present. Conventional silicon solar cells are made on P-type silicon semiconductor substrates. This P-type wafer is doped with a trace amount of boron in u...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王立建王栩生章灵军
Owner CSI CELLS CO LTD
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