PERC preparation method

A technology for batteries and silicon wafers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of easy formation of voids in aluminum paste filling and reduce the effect of back passivation, so as to achieve power improvement, reduce the proportion of aluminum-silicon voids, and reduce The effect of manufacturing costs

Inactive Publication Date: 2017-02-22
ZHEJIANG JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The back of conventional PERC cells is printed with an aluminum back field on the entire surface. If the aluminum paste is not filled tightly in the slot, it will easily form c

Method used

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  • PERC preparation method

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preparation example Construction

[0031] Based on this, an embodiment of the present invention provides a method for preparing a PERC battery, including:

[0032] Step 1, texturing the silicon wafer;

[0033] Step 2, performing boron diffusion on the back side and phosphorus diffusion on the front side of the silicon wafer to form a borosilicate glass layer and a phosphosilicate glass layer;

[0034] Step 3, etching and removing the borosilicate glass layer and the phosphosilicate glass layer;

[0035] Step 4, plating a back passivation layer on the back side of the silicon wafer;

[0036] Step 5, coating the front side of the silicon wafer with an anti-reflection film;

[0037] Step 6, performing laser grooving on the back side of the silicon wafer;

[0038] Step 7, screen-printing a grid-like aluminum back field on the back of the silicon wafer;

[0039] Step 8, printing a front electrode on the front surface of the silicon wafer, and performing sintering.

[0040] In summary, the PERC battery preparati...

Embodiment 1

[0057] Take 500 pieces of monocrystalline silicon wafers, and perform conventional PERC texturing, diffusion, etching, rear aluminum oxide, rear silicon nitride, front silicon nitride, and rear laser grooving (30-50um line width). Print grid-shaped back electric field by means of screen printing - the screen line width of the grid-shaped aluminum back field is 25 μm to 30 μm, print the front electrode, sinter, and complete the preparation of the battery. The maximum efficiency of the manufactured single crystal PERC battery can reach To 20.55%.

Embodiment 2

[0059] The screen line width of the grid-shaped aluminum back field is 35 μm to 40 μm, and conventional PERC texturing, diffusion, etching, aluminum oxide on the back, silicon nitride on the back, silicon nitride on the front, and laser grooving on the back (42um line width) process, print the grid-shaped back electric field by screen printing-the screen line width of the grid-shaped aluminum back field is 35 μm to 40 μm, print the front electrode, sinter, and complete the preparation of the battery. The maximum efficiency of monocrystalline PERC cells can reach 20.45%.

[0060] From the test results of the above comparative examples and examples, it can be seen that: the grid-shaped back electric field is easier to mass-produce, saving aluminum paste and reducing production costs, and the efficiency is also increased; at the same time, PERC cells made of double-sided diffusion superimposed grid-shaped aluminum back field, It has the effect of double-sided cells, and has a cer...

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Abstract

The invention discloses a PERC preparation method, which comprises the following steps: 1) carrying out texturing on a silicon wafer; 2) carrying out back-surface boron diffusion and front-surface phosphorus diffusion on the silicon wafer to form a borosilicate glass layer and a phosphorosilicate glass layer; 3) etching the borosilicate glass layer and the phosphorosilicate glass layer; 4) plating a back-surface passivation layer on the back surface of the silicon wafer; 5) plating a front-surface anti-reflection film on the front surface of the silicon wafer; 6) carrying out back-surface laser grooving on the silicon wafer; 7) carrying out grid line aluminum back-surface field silk-screen printing on the back surface of the silicon wafer; and 8) printing a front-surface electrode on the front surface of the silicon wafer and carrying out sintering. By printing a grid line aluminum back-surface field on the back surface, aluminium slurry can be fully extruded and fully fill the whole opening groove body, thereby reducing aluminium silicon cavity proportion, saving aluminium slurry and reducing manufacture cost; and meanwhile, the PERC prepared through double-side diffusion and superposition and printing of the grid line aluminum back-surface field has a double-battery effect, and has a certain power rise for a current novel double-glass assembly.

Description

technical field [0001] The invention relates to the field of photovoltaic module manufacturing, in particular to a preparation method of a PERC battery. Background technique [0002] High efficiency and low cost are the main goals pursued by crystalline silicon solar cells at present. PERC cells are currently the main technology to improve the electrical performance of polycrystalline silicon solar cells. The core is to use aluminum oxide or silicon oxide films (5nm to 10nm) Covering to passivate the back surface and improve the long-wave response, thereby improving the conversion efficiency of the battery. [0003] The preparation method of the existing PERC solar cell structure mainly includes the following steps: texturing, diffusion, etching, depositing aluminum oxide or silicon oxide film on the back, depositing a silicon nitride protective film, depositing a silicon nitride anti-reflection layer on the front, and partially PERC cells can be obtained by opening, screen...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/1804Y02E10/547Y02P70/50
Inventor 孙海杰金井升蒋方丹金浩
Owner ZHEJIANG JINKO SOLAR CO LTD
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