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A process for preparing n-type solar cells by co-diffusion of boron and phosphorus

A solar cell and co-diffusion technology, which is applied in the field of preparing n-type solar cells by co-diffusion of boron and phosphorus, can solve the problems of cumbersome preparation process, many process influencing factors, and no profit advantage, and achieve the effect of improving performance and reducing impact

Inactive Publication Date: 2011-11-30
JIANGYIN XINHUI SOLAR ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this preparation process is still relatively cumbersome, and there are many factors affecting the process, and compared with the current conversion efficiency of p-type solar cells of 18.0~18.5%, there is not much profit advantage.

Method used

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  • A process for preparing n-type solar cells by co-diffusion of boron and phosphorus
  • A process for preparing n-type solar cells by co-diffusion of boron and phosphorus
  • A process for preparing n-type solar cells by co-diffusion of boron and phosphorus

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Experimental program
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Effect test

Embodiment 1

[0022] Such as figure 1 Shown: A process for preparing n-type solar cells by co-diffusion of boron and phosphorus, including the following steps:

[0023] 1. Use n-type silicon wafers with a minority carrier lifetime greater than 50μs and a resistivity of 0.5~15.0Ωcm to remove the damaged layer and texture on the surface of the silicon wafer by chemical etching;

[0024] 2. Print boron paste on the front side of the silicon wafer, and dry it at 100~500°C for 5~30min;

[0025] 3. The active layer is inserted into a quartz boat face to face for high-temperature diffusion; first diffuse at 880-1100°C for 10-60min, then cool down to 800-950°C, and then introduce POCl 3 source for phosphorus diffusion for 10~60min;

[0026] 4. Plasma for edge isolation;

[0027] 5. Chemical corrosion cleaning to remove printing paste, phosphosilicate glass and borosilicate glass, and drying;

[0028] 6. Double-sided passivation, the passivation method is: thermal oxygen passivation plus S...

Embodiment 2

[0032] Such as figure 2 Shown: A process for preparing n-type solar cells by co-diffusion of boron and phosphorus, including the following steps:

[0033] 1. Use n-type silicon wafers with a minority carrier lifetime greater than 50μs and a resistivity of 0.5~15.0Ωcm to remove the damaged layer and texture on the surface of the silicon wafer by chemical etching;

[0034] 2. Print boron paste on the front side of the silicon wafer, and dry it at 100~500°C for 5~30min;

[0035] 3. Print another barrier layer on the front to cover the boron source, and dry at 100-500°C for 5-30 minutes;

[0036] 4. The active layer is inserted into a quartz boat face to face for high-temperature diffusion; first diffuse at 880-1100°C for 10-60min, then cool down to 800-950°C, and then introduce POCl 3 source for phosphorus diffusion for 10~60min;

[0037] 5. Plasma for edge isolation;

[0038] 6. Chemical corrosion cleaning to remove printing paste, phosphosilicate glass and borosilica...

Embodiment 3

[0043] Such as image 3 Shown: A process for preparing n-type solar cells by co-diffusion of boron and phosphorus, including the following steps:

[0044] 1. Use n-type silicon wafers with a minority carrier lifetime greater than 50μs and a resistivity of 0.5~15.0Ωcm to remove the damaged layer and texture on the surface of the silicon wafer by chemical etching;

[0045] 2. Print phosphorous paste on the back of the silicon wafer, and dry it at 100-500°C for 5-30 minutes;

[0046] 3. The active layer is inserted into the quartz boat back to back for high temperature diffusion, and the BBr is passed through at a temperature of 880~1100°C 3 Source for boron diffusion for 10~60min;

[0047] 4. Plasma for edge isolation;

[0048] 5. Chemical corrosion cleaning to remove printing paste, phosphosilicate glass and borosilicate glass, and drying;

[0049] 6. Double-sided passivation, the passivation method is: thermal oxygen passivation plus SiN film deposited on both sides,...

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Abstract

The invention discloses a process for preparing an n-type solar cell by co-diffusion of boron and phosphorus, which comprises the following steps: making surface texture; screen-printing boron slurry or phosphorus slurry on the surface of a silicon chip, and drying at 100-500°C Dry for 5~30 minutes; according to the self-blocking and out-diffusion characteristics of boron slurry or phosphorus slurry at high temperature, you can choose whether to screen print a layer of barrier layer slurry on it; the active layer is back-to-back for high-temperature boron and phosphorus diffusion; for For n-type silicon wafers printed with boron paste, first diffuse at 880-1100°C for 10-60 minutes, then cool down to 800-950°C, and then inject POCl3 source for phosphorus diffusion for 10-60 minutes; for n-type silicon wafers printed with phosphorous paste BBr3 source was passed into the wafer at a temperature of 880-1100°C for boron-phosphorus co-diffusion for 10-60 minutes; edge isolation and removal of BSG, PSG and barrier layers; double-sided passivation; preparation of electrodes.

Description

[0001] technical field [0002] The invention relates to the field of photovoltaic power generation, in particular to a process for preparing n-type solar cells by co-diffusion of boron and phosphorus. Background technique [0003] High efficiency and low cost are the two goals pursued by the photovoltaic industry, and n-type cells have received more and more attention due to their high minority carrier lifetime and low attenuation characteristics. At present, the only commercial high-efficiency cells with an efficiency exceeding 20.0% are Sunpower's full-back electrode solar cells and Sanyo's HIT heterojunction cells, with the highest efficiencies reaching 24.2% and 23.0%, respectively. Sunpower's full-back electrode solar cells use multiple high-temperature diffusion, high-temperature oxidation, masking, and chemical corrosion processes to form phosphorus front fields, boron back emitters, and local boron heavily doped contact windows. The process is very complicated. San...

Claims

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Application Information

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IPC IPC(8): H01L31/18B41M1/12
CPCY02P70/50
Inventor 陶龙忠董经兵杨灼坚夏正月李晓强宋文涛高艳涛卢建刚邢国强
Owner JIANGYIN XINHUI SOLAR ENERGY
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