The invention discloses a method for preparing a double-faced back contact
solar cell, comprising following steps: (1) holing; (2) washing, and texturizing the front face and the back face of a
silicon wafer; (3) arranging a first
doping agent on the front face and in the hole of the
silicon wafer, and arranging the first
doping agent in the surrounding area of the hole in the back face of the
silicon wafer, wherein the
doping type of the first doping agent is opposite to that of the silicon wafer; (4) arranging a second doping agent in the non-hole surrounding area on the back face of the silicon wafer, wherein the doping type of the second doping agent is the same as that of the silicon wafer; (5) growing barrier
layers on the front face and the back face of the silicon wafer; (6) annealing the silicon wafer at the temperature of 800 to 1000 DEG C, diffusing and making junctions; (7)
etching peripheral junctions; (8) washing and removing the barrier
layers; (9) arranging
passivation anti-reflection films on the front face and the back face of the silicon wafer; and (10) arranging a
porous metal electrode in the hole, printing and
sintering. Adopting a method for arranging the doping agents, i.e. adopting the various type doping agents on two faces of the silicon wafer, the double-faced back contact
solar cell realizes the co-
diffusion of
boron-
phosphor in the presence of the barrier
layers, thereby greatly simplifying process flows and reducing the production cost.