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Manufacturing method for black silicon double-face cell

A technology of a double-sided cell and a manufacturing method, which is applied in the field of solar cells, can solve the problems of hindering the progress of industrialization, cumbersome processes, and improving the power generation of solar cells, and achieves the effects of increasing power output, improving absorption, and reducing reflectivity.

Inactive Publication Date: 2016-05-11
JIANGXI UNIEX NEW ENERGY CO LTD
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Problems solved by technology

[0003] The current crystalline silicon cell market usually only has one light-receiving surface, that is, the solar cell can only use the photons irradiated from the front, and cannot use the sunlight on the back of the cell, and cannot make full use of the sunlight. It is a big obstacle in terms of power generation
The double-sided battery "Panda" battery produced by Yingli Group also adopts double-sided light-receiving technology, but it adopts the method of expanding phosphorus on the front and expanding boron on the back, and printing silver electrodes on both sides to prepare double-sided light-receiving cells. This double-sided battery involves Diffusion of different types of double-sided and a variety of cumbersome processes have brought certain obstacles to the progress of industrialization

Method used

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  • Manufacturing method for black silicon double-face cell
  • Manufacturing method for black silicon double-face cell

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Embodiment

[0027] A method for manufacturing a black silicon double-sided battery, the specific steps are:

[0028] The P-type silicon chip used is 15.6cm×15.6cm, but not limited to this size; the resistivity is 1-3Ω·cm.

[0029] a. Carry out double-sided texturing of the silicon wafer;

[0030] b. Using metal-assisted catalytic etching to fabricate black silicon structures

[0031] Put the textured silicon wafer into AgNO 3 and HF mixed solution, AgNO 3 The concentration of HF is 0.001-0.2mol / L, the concentration of HF is 0.01-0.1mol / L, react at room temperature for 10-100s, after the reaction is completed, clean the silicon wafer, and then put HF and H 2 o 2 In the mixed solution, the concentration of HF is 1-5mol / L, H 2 o 2 The concentration is 0.1-2mol / L, react at room temperature for 50-200s;

[0032] c. Use acid to remove metal ions

[0033] Wash the silicon wafer obtained in step b, first react with 0.005-0.2mol / L KOH solution at 70°C for 50-200s, and then use 0.005-0.2mol...

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Abstract

The invention discloses a manufacturing method for a black silicon double-face cell. The method comprises steps that (1) double-face texturing for a silicon chip is carried out; (2), black silicon structures are made at two faces of the silicon chip by employing auxiliary metal chemical corrosion; (3), after KOH nanometer suede-like face restoration, metal ions are removed through utilizing acid; (4), PECVD deposition is employed for the first face to form a boron-contained silicon dioxide layer; (5), PECVD deposition is employed for the second face to form a phosphorus-contained silicon dioxide layer; (6), double-face co-diffusion is carried out, and double-face SiNx deposition is carried out; and (7), through double-face screen printing and sintering, the black silicon double-face solar cell is formed. According to the method, doping concentration of the cell surface after diffusion can be improved, and the open-circuit voltage, the short-circuit current and conversion efficiency can be further improved.

Description

technical field [0001] The invention relates to a method for manufacturing a black silicon double-sided battery, which belongs to the technical field of solar cells. Background technique [0002] In recent years, black silicon, as a new type of semiconductor optoelectronic material with nano light-trapping structure, has received extensive attention because it can reduce the surface reflectance of the battery and can effectively improve the conversion efficiency of the battery. The preparation methods of black silicon mainly include femtosecond laser method, electrochemical corrosion method, reactive ion etching method and metal-assisted chemical etching method. Among them, femtosecond laser method and reactive ion etching method are dry etching, electrochemical etching Corrosion and metal-assisted chemical etching methods are wet etching methods. Among the many methods of making black silicon, the metal-assisted chemical etching method is favored because of its low cost, s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236H01L31/028
CPCH01L31/02363H01L31/028H01L31/1876Y02E10/547Y02P70/50
Inventor 林振龙杨晓琴黄明
Owner JIANGXI UNIEX NEW ENERGY CO LTD
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