Manufacturing method for black silicon double-face cell

Abstract

The invention discloses a manufacturing method for a black silicon double-face cell. The method comprises steps that (1) double-face texturing for a silicon chip is carried out; (2), black silicon structures are made at two faces of the silicon chip by employing auxiliary metal chemical corrosion; (3), after KOH nanometer suede-like face restoration, metal ions are removed through utilizing acid; (4), PECVD deposition is employed for the first face to form a boron-contained silicon dioxide layer; (5), PECVD deposition is employed for the second face to form a phosphorus-contained silicon dioxide layer; (6), double-face co-diffusion is carried out, and double-face SiNx deposition is carried out; and (7), through double-face screen printing and sintering, the black silicon double-face solar cell is formed. According to the method, doping concentration of the cell surface after diffusion can be improved, and the open-circuit voltage, the short-circuit current and conversion efficiency can be further improved.

Description

technical field

[0001] The invention relates to a method for manufacturing a black silicon double-sided battery, which belongs to the technical field of solar cells. Background technique

[0002] In recent years, black silicon, as a new type of semiconductor optoelectronic material with nano light-trapping structure, has received extensive attention because it can reduce the surface reflectance of the battery and can effectively improve the conversion efficiency of the battery. The preparation methods of black silicon mainly include femtosecond laser method, electrochemical corrosion method, reactive ion etching method and metal-assisted chemical etching method. Among them, femtosecond laser method and reactive ion etching method are dry etching, electrochemical etching Corrosion and metal-assisted chemical etching methods are wet etching methods. Among the many methods of making black silicon, the metal-assisted chemical etching method is favored because of its low cost, s...

Examples

Embodiment

[0027] A method for manufacturing a black silicon double-sided battery, the specific steps are:

[0028] The P-type silicon chip used is 15.6cm×15.6cm, but not limited to this size; the resistivity is 1-3Ω·cm.

[0029] a. Carry out double-sided texturing of the silicon wafer;

[0030] b. Using metal-assisted catalytic etching to fabricate black silicon structures

[0031] Put the textured silicon wafer into AgNO 3 and HF mixed solution, AgNO 3 The concentration of HF is 0.001-0.2mol / L, the concentration of HF is 0.01-0.1mol / L, react at room temperature for 10-100s, after the reaction is completed, clean the silicon wafer, and then put HF and H 2 o 2 In the mixed solution, the concentration of HF is 1-5mol / L, H 2 o 2 The concentration is 0.1-2mol / L, react at room temperature for 50-200s;

[0032] c. Use acid to remove metal ions

[0033] Wash the silicon wafer obtained in step b, first react with 0.005-0.2mol / L KOH solution at 70°C for 50-200s, and then use 0.005-0.2mol...

technical field

[0001] The invention relates to a method for manufacturing a black silicon double-sided battery, which belongs to the technical field of solar cells. Background technique

[0002] In recent years, black silicon, as a new type of semiconductor optoelectronic material with nano light-trapping structure, has received extensive attention because it can reduce the surface reflectance of the battery and can effectively improve the conversion efficiency of the battery. The preparation methods of black silicon mainly include femtosecond laser method, electrochemical corrosion method, reactive ion etching method and metal-assisted chemical etching method. Among them, femtosecond laser method and reactive ion etching method are dry etching, electrochemical etching Corrosion and metal-assisted chemical etching methods are wet etching methods. Among the many methods of making black silicon, the metal-assisted chemical etching method is favored because of its low cost, s...

Examples

Embodiment

[0027] A method for manufacturing a black silicon double-sided battery, the specific steps are:

[0028] The P-type silicon chip used is 15.6cm×15.6cm, but not limited to this size; the resistivity is 1-3Ω·cm.

[0029] a. Carry out double-sided texturing of the silicon wafer;

[0030] b. Using metal-assisted catalytic etching to fabricate black silicon structures

[0031] Put the textured silicon wafer into AgNO 3 and HF mixed solution, AgNO 3 The concentration of HF is 0.001-0.2mol / L, the concentration of HF is 0.01-0.1mol / L, react at room temperature for 10-100s, after the reaction is completed, clean the silicon wafer, and then put HF and H 2 o 2 In the mixed solution, the concentration of HF is 1-5mol / L, H 2 o 2 The concentration is 0.1-2mol / L, react at room temperature for 50-200s;

[0032] c. Use acid to remove metal ions

[0033] Wash the silicon wafer obtained in step b, first react with 0.005-0.2mol / L KOH solution at 70°C for 50-200s, and then use 0.005-0.2mol...

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