Preparation method of N-type double-sided solar cell

A solar cell, N-type technology, applied in the field of solar cells, can solve the problems of increased process time, increased cost, and decreased yield, and achieve the effect of simplifying the production process

Active Publication Date: 2016-05-25
SUZHOU TALESUN SOLAR TECH CO LTD
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Problems solved by technology

The process time and procedures are all increased, in ad

Method used

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  • Preparation method of N-type double-sided solar cell

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Embodiment Construction

[0034] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art. The wt% in the present invention represents the mass percentage (no problem). The front and back mentioned in the present invention are defined according to the usual viewing angle of those skilled in the art and for the convenience of description. The specific direction is not limited. Generally, it is facing the sun The side facing the sun is the front and the side facing away from the sun is the back.

[0035] Refer to attached figure 1 As shown, the method for preparing an N-type solar cell of the present invention uses an N-type silicon wafer with a resistivity of 1-6 Ohmcm as a raw material, and performs steps S1 to S7 in sequence.

[0036] S1, making texture on the surface of the N-type silicon wafer to form a te...

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Abstract

The invention provides a preparation method of an N-type double-sided solar cell. A mask is not needed, and a production technology of the N-type double-sided solar cell is simplified. The preparation method of the N-type double-sided solar cell sequentially comprises the following steps: (S1) carrying out texturing on the surface of an N-type silicon wafer to form suede; (S2) coating the front surface of the textured silicon wafer with boron slurry; (S3) carrying out drying and sintering, and forming a borosilicate glass layer on the front surface of the silicon wafer as a barrier layer; (S4) carrying out annealing co-diffusion; (S5) carrying out acid pickling, and washing off borosilicate glass on the front surface of the silicon wafer and phosphorosilicate glass on the back surface of the silicon wafer; (S6) coating the surface of the silicon wafer with a passivation film; and (S7) printing an electrode and sintering the electrode. The step (S4) further comprises the following steps: (S41) boron diffusion, namely forming a boron emitter on the front surface of the silicon wafer, and (S42) phosphorus diffusion, namely forming a phosphorous diffusion back field on the back surface of the silicon wafer.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a preparation method of an N-type double-sided solar cell. Background technique [0002] The market share of crystalline silicon solar cells accounts for the vast majority of the photovoltaic market. In the prior art, crystalline silicon cells are mainly P-type single crystal and P-type polycrystalline. The single crystal is etched anisotropically by alkali to form light-trapping suede, and the polycrystalline is etched isotropically by a mixed acid solution of HNO3 and HF to form suede. noodle. The following processes are basically the same: POCl3 diffuses to form an N-type layer on the surface of the P-type silicon, that is, the NP junction; wet etching removes the NP junction on the back and edge; prints silver paste on the front side of the silicon, and prints aluminum paste on the back side; sintering, The aluminum and silicon on the back are fused, and the fused part forms the ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 倪志春魏青竹吴晨阳陆俊宇刘晓瑞连维飞
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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