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Method of manufacturing crystalline silicon solar cells using co diffusion of boron and phosphorus

A technology of solar cells and crystalline silicon, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as increasing costs

Active Publication Date: 2010-12-15
NEDERLANDSE ORG VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK (TNO)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the wafer edge must then be ablated, which significantly increases the cost per produced Wp

Method used

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  • Method of manufacturing crystalline silicon solar cells using co diffusion of boron and phosphorus
  • Method of manufacturing crystalline silicon solar cells using co diffusion of boron and phosphorus
  • Method of manufacturing crystalline silicon solar cells using co diffusion of boron and phosphorus

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Embodiment Construction

[0024] figure 1 Shown is an example of the structure of a solar cell made according to the method of one embodiment of the present invention. The solar cell 10 comprises an n-type silicon substrate 11 having a boron diffusion layer 12 on one side and a phosphorus diffusion layer 13 on the other side. It should be noted that the actual solar cell structure also has metal contacts and an anti-reflective coating, but these components are not shown in the diagram. figure 2 Shown is another embodiment of processing a p-type silicon substrate 21 to produce a phosphorus diffused layer 22 on one side and a boron diffused layer 23 on the other. figure 1 The solar cell is the preferred embodiment because its device characteristics are better than figure 2 . In the following description, discusses figure 1 Embodiments of the method of fabrication of solar cells (ie, n-type substrates) shown in .

[0025] The first step of the method is to produce a P-diffused layer on one side of ...

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Abstract

The present invention provides a method of manufacturing a crystalline silicon solar cell, subsequently comprising: providing a crystalline silicon substrate having a first side and a second side opposite the first side; pre-diffusing Phosphorus into a first side of the substrate to render a Phosphorus diffused layer having an initial depth; blocking the first side of the substrate; - exposing a second side of the substrate to a Boron diffusion source; heating the substrate for a certain period of time and to a certain temperature so as to diffuse Boron into the second side of the substrate and to simultaneously diffuse the Phosphorus further into the substrate.

Description

technical field [0001] The present invention relates to the fabrication of solar cells using crystalline silicon (Si) substrates. One example of such a solar cell is a boron emitter n-base solar cell with a backside region created by phosphorous diffusion. Background technique [0002] If two diffusion processes (boron and phosphorus) are required, the higher temperature boron diffusion step is usually performed before the lower temperature phosphorus diffusion step, see for example Proceedings of 21st European Photovoltaic Solar Energy Conference by T. Buck et al. (4- 8 September 2006, Dresden, Germany), pp. 1264-1267. This process sequence requires a special protective layer to prevent phosphorus diffusion into the boron diffused face during the phosphorus diffusion step. Boron sometimes diffuses out of the boron diffusion layer to this protective layer and is depleted near the interface. This leads to an increase in the sheet resistance of the emitter and in the series...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor V·D·米哈伊利奇Y·科马特苏
Owner NEDERLANDSE ORG VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK (TNO)
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