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Manufacturing method of PERT crystalline silicon solar cell using novel doping mode

A manufacturing method and technology for solar cells, which are applied to circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low efficiency and complicated procedures, and achieve the effects of reducing procedures, improving efficiency, and saving costs.

Inactive Publication Date: 2018-02-16
DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this invention, the front and back of the silicon wafer are separately deposited and diffused, which has the problems of complicated process and low efficiency.

Method used

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  • Manufacturing method of PERT crystalline silicon solar cell using novel doping mode

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Embodiment 1

[0025] A method for manufacturing a PERT crystalline silicon solar cell using a novel doping method, comprising the following steps:

[0026] (1) Silicon wafer 1 single-sided texturing, cleaning: select P-type silicon wafer 1, and use a mass fraction of 1.0% sodium hydroxide solution to chemically etch the surface of P-type silicon wafer 1 at 78 ° C to prepare a pyramid shape The suede surface is cleaned with hydrofluoric acid with a mass fraction of 12% to remove surface impurities;

[0027] (2) B, P co-expansion process is adopted, the front P is diffused, and the back B is diffused. Two silicon wafers 1 form a group, and each group of silicon wafers 1 is diffused in a vertical back-to-back manner. Insert the paper-like solid source B source 2 (available in the market), and carry out front phosphorus diffusion by passing phosphorus oxychloride on the front; push the diffusion furnace to perform high-temperature co-diffusion, so that an n+ doped layer is formed on the front o...

Embodiment 2

[0035] A method for manufacturing a PERT crystalline silicon solar cell using a novel doping method, comprising the following steps:

[0036] (1) Silicon wafer 1 single-sided texturing, cleaning: select P-type silicon wafer 1, and use a mass fraction of 1.4% sodium hydroxide solution to chemically etch the surface of P-type silicon wafer 1 at 82°C to prepare a pyramid shape The suede surface is cleaned with hydrofluoric acid with a mass fraction of 18% to remove surface impurities;

[0037] (2) B, P co-expansion process is adopted, the front P is diffused, and the back B is diffused. Two silicon wafers 1 form a group, and each group of silicon wafers 1 is diffused in a vertical back-to-back manner. Insert the paper-like solid source B source 2, and use phosphorus oxychloride on the front side to carry out front-side phosphorus diffusion; push the diffusion furnace to perform high-temperature co-diffusion, so that an n+ doped layer is formed on the front side of the silicon waf...

Embodiment 3

[0045] A method for manufacturing a PERT crystalline silicon solar cell using a novel doping method, comprising the following steps:

[0046] (1) Silicon wafer 1 single-sided texturing, cleaning: select P-type silicon wafer 1, and use a mass fraction of 1.2% potassium hydroxide solution to chemically etch the surface of P-type silicon wafer 1 at 80 ° C to prepare a pyramid shape The suede surface is cleaned with 15% hydrofluoric acid to remove surface impurities;

[0047] (2) B, P co-expansion process is adopted, the front P is diffused, and the back B is diffused. Two silicon wafers 1 form a group, and each group of silicon wafers 1 is diffused in a vertical back-to-back manner. Insert the paper-like solid source B source 2, and use phosphorus oxychloride on the front side to carry out front-side phosphorus diffusion; push the diffusion furnace to perform high-temperature co-diffusion, so that an n+ doped layer is formed on the front side of the silicon wafer 1, and a p+ dope...

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Abstract

The invention discloses a manufacturing method of a PERT crystalline silicon solar cell using a novel doping mode. Silicon wafers adopt a B and P co-diffusion process, including the front side P diffusion and the back side B diffusion, two of the silicon wafers are in one group, each silicon wafer group is diffused in a vertical back-to-back manner, a paper-like solid state source B is inserted between the back surfaces of the two silicon wafers, and positive phosphorus diffusion is carried out on the front side by using phosphorus oxychloride; and high-temperature co-diffusion is carried outon the silicon wafers in a diffusion furnace, so that the front side of the silicon wafers forms an n+ doped layer and the back side forms a p+ doped layer. The problems of complex procedures and lowefficiency in the diffusion mode of separate deposition of the front and back sides of the silicon wafers in the background art are solved.

Description

technical field [0001] The invention belongs to the field of crystalline silicon solar cell manufacturing, and relates to a method for manufacturing a high-efficiency crystalline silicon solar cell with full-surface doping on the back and back passivation and back point contact, in particular to a PERT crystalline silicon adopting a new doping method How to make solar cells. Background technique [0002] Against the backdrop of increasingly prominent problems such as energy scarcity, resource shortage, and environmental pollution, the use of natural resources for solar power generation has been regarded as a countermeasure to solve the problems of global warming and fossil fuel depletion, and has been favored by countries all over the world. However, the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has become an urgent issue for manuf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1812Y02E10/50Y02P70/50
Inventor 樊华吴俊清李慧俞超徐强
Owner DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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