Low-cost n-type dual-side solar battery and preparation method thereof

A technology for double-sided solar cells and solar cells, which is applied in the manufacturing of circuits, electrical components, and final products, etc., can solve the problems of difficult market development and high production costs, and achieve the reduction of back doping area, the improvement of conversion efficiency, and the reduction of recombination rate. Effect

Active Publication Date: 2013-05-01
江苏润阳光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation of n-type double-sided solar cells using conventional technical routes requires multiple complex processes such as high-temperature diffusion, oxidation masking, and dejunction etching, which makes the preparation cost high and the market is difficult to develop.

Method used

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  • Low-cost n-type dual-side solar battery and preparation method thereof
  • Low-cost n-type dual-side solar battery and preparation method thereof
  • Low-cost n-type dual-side solar battery and preparation method thereof

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Embodiment 1

[0031] Such as figure 2 As shown, the present invention provides a low-cost n-type double-sided solar cell, the front surface is a boron emitter 1 formed by boron diffusion, a passivation layer 2 and an anti-reflection layer 3 are deposited on the boron emitter, and the back surface of the solar cell The contact position of the back electrode is the local phosphorus back field 4, and the rest are non-doped regions, on which a phosphorus-doped passivation layer 5 is deposited, a metal front electrode 7 is prepared on the front surface, and a metal back electrode 8 is prepared on the back surface .

[0032] The preparation method of above-mentioned n-type double-sided solar cell comprises the following steps (such as Figure 4 shown):

[0033] (1) Use n-type silicon wafers with a minority carrier lifetime of more than 50 μs and a resistivity of 0.5-15.0 Ωcm to remove the damaged layer and texture on the surface of the silicon wafer by chemical etching;

[0034] (2) Boron dif...

Embodiment 2

[0041] Such as image 3 As shown, the present invention provides a low-cost n-type double-sided solar cell, the front surface is a boron emitter 1 formed by boron diffusion, a passivation layer 2 and an anti-reflection layer 3 are deposited on the boron emitter, and the back surface of the solar cell The contact position of the back electrode is the local phosphorus back field 4, and the rest are non-doped regions, on which a passivation layer 6 is deposited, and a phosphorus source 9 is sprayed on the passivation layer 6, and a metal front electrode 7 is prepared on the front surface. , a metal back electrode 8 is prepared on the back surface.

[0042] The preparation method of above-mentioned n-type double-sided solar cell comprises the following steps (such as Figure 5 shown):

[0043] (1) Use n-type silicon wafers with a minority carrier lifetime of more than 50 μs and a resistivity of 0.5-15.0 Ωcm to remove the damaged layer and texture on the surface of the silicon wa...

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Abstract

The invention discloses a low-cost n-type dual-side solar battery. The front surface of the solar battery is provided with a boron emitter formed by diffusing boron; a passivation layer and an antireflection layer are deposited on the boron emitter; a back electrode contact position on the back surface of the solar battery is a local phosphorus back surface field, and the rest is a non-doped area; a passivation layer is deposited on the non-doped area; the front surface of the non-doped area is provided with a metal front electrode; and the back surface of the non-doped area is provided with a metal back electrode. The invention further discloses a preparation method of the low-cost n-type dual-side solar battery. Compared with the prior art, the low-cost n-type dual-side solar battery has the beneficial effects that a local n<+>-doped area is formed by using a laser-doped phosphorus-containing film or a coated phosphorus source; and meanwhile, a passivation effect is kept, a front surface field and a back surface field can be formed simultaneously without secondary high-temperature phosphorus diffusion or other masking processes, the manufacturing process of the dual-size n-type solar battery is simplified, and the manufacturing cost is lowered.

Description

technical field [0001] The invention relates to the field of photovoltaic power generation, in particular to an n-type double-sided solar cell and a preparation method thereof. Background technique [0002] N-type double-sided solar cells have unique advantages of high efficiency, low attenuation, double-sided power generation and beautiful appearance, and are receiving more and more attention in the photovoltaic market. At present, the n-type double-sided solar cells of some manufacturers are basically conventional structures (see figure 1 ), the front surface is a boron-doped boron emitter 1, and a passivation layer 2 and an anti-reflection layer 3 on it, and the other side is a phosphorus-doped back field 10 and a passivation layer 6 on it, double-sided The front electrode 7 and the back electrode 8 are prepared. The preparation of n-type double-sided solar cells using conventional technical routes requires multiple complex processes such as high-temperature diffusion, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCY02P70/50
Inventor 汪保卫沈辉
Owner 江苏润阳光伏科技有限公司
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