Preparation method of n-type crystalline silicon solar cell based on emitting electrode preparation through laser doping

A technology of solar cells and laser doping, applied in the field of solar cells, can solve the problems of high cost and cumbersome process, and achieve the effects of low cost, convenient industrialization, and easy mass production.

Inactive Publication Date: 2012-03-07
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to overcome the shortcomings of high cost and cumbersome process of PERL battery, the researchers tried to use laser ablation instead of the traditional photolithography dielectric film opening process, and achieved good results

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The preparation method of the n-type crystalline silicon solar cell based on laser doping to prepare the emitter proposed by the present invention, the n-type monocrystalline silicon solar cell is taken as an example below to illustrate its preparation steps are as follows:

[0027] (1) Clean the crystalline silicon chip and make velvet, and spin-coat the front surface of the crystalline silicon chip with a concentration of 3.0% boric acid;

[0028] (2) Fix the crystalline silicon wafer on the laser workbench, adopt a pulse laser with a wavelength of 532nm, set the laser pulse frequency to 20-40KHz, scan speed to 200-400mm / s, and laser power to 3-4W, Irradiate the surface of the solar cell with a spot of light that reaches a micron-scale diameter after focusing to scan the surface to make an emitter, and clean it;

[0029] (3) Using Al 2 o 3 / SiO 2 The laminated dielectric film passivates the front and rear surfaces of the battery;

[0030] (4) SiNx anti-reflection ...

Embodiment 2

[0033] The preparation method of the n-type crystalline silicon solar cell based on laser doping to prepare the emitter proposed by the present invention, the n-type monocrystalline silicon solar cell is taken as an example below to illustrate its preparation steps are as follows:

[0034] (1) Clean the crystalline silicon chip and make velvet, and the concentration of spin coating on the front surface of the crystalline silicon chip is 5.0% boric acid;

[0035] (2) Fix the crystalline silicon wafer on the laser workbench, adopt a pulse laser with a wavelength of 355nm, set the laser pulse frequency to 20-50KHz, scan speed to 200-400mm / s, and laser power to 1-3W, Irradiate the surface of the solar cell with a spot of light focused to a micron-scale diameter for surface scanning to make an emitter and clean it;

[0036] (3) Using Al 2 o 3 / SiO 2 The laminated dielectric film passivates the front and rear surfaces of the battery;

[0037] (4) SiNx anti-reflection film is coa...

Embodiment 3

[0040] The preparation method of the n-type crystalline silicon solar cell based on laser doping to prepare the emitter proposed by the present invention, the following takes the n-type single-crystalline silicon solar cell as an example to illustrate the preparation steps as follows:

[0041] (1) Clean the crystalline silicon chip and make velvet, and the concentration of spin coating on the front surface of the crystalline silicon chip is 5.0% boric acid;

[0042] (2) Fix the crystalline silicon wafer on the laser workbench, adopt a continuous laser with a wavelength of 532nm, set the laser pulse frequency to 20-40KHz, the scanning speed to 200-400mm / s, and the laser power to 3-4W, Irradiate the surface of the solar cell with a spot of light that reaches a micron-scale diameter after focusing to scan the surface to make an emitter, and clean it;

[0043] (3) Using Al 2 o 3 / SiO 2 The laminated dielectric film passivates the front and rear surfaces of the battery;

[0044...

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PUM

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Abstract

The invention discloses a preparation method of an n-type crystalline silicon solar cell based on emitting electrode preparation through laser doping. The method comprises the following steps of: preparing an emitting electrode on an n-type substrate spin-coated with boric acid by using a full lasing area scanning method; passivating the front surface and the back surface of a cell by adopting Al2O3/SiO2 laminated dielectric films; plating an SiNx antireflection film on the front surface of the cell; forming local open pores on the back surface of the cell by adopting a laser ablation technology; and finally forming the emitting electrode by adopting a conventional screen printing and ablation method, and preparing the cell. The preparation method disclosed by the invention has the advantages of simple procedure and low cost, is beneficial to production of solar cells with high efficiency and can realize large-scale production.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing n-type crystalline silicon solar cells based on laser doping to prepare emitters. Background technique [0002] The first solar cells to be made on n-type substrates were in 1950, but it was later found that their performance was seriously attenuated in the case of high radiation in space, and the conversion efficiency after stabilization was lower than that of p-type solar cells with similar structures. This makes p-type solar cells a preferred choice for space applications, and its cell structure and production technology have been continuously improved. [0003] Subsequently, in the process of turning solar cells to ground applications, the p-type solar cell structure was used and became the mainstream. But there is no threat of high radiation in terrestrial applications, especially since a lot of recent research to develop high-efficiency cells has found tha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 梁宗存叶小帅朱彦斌沈辉
Owner SUN YAT SEN UNIV
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