Preparation method of n-type crystalline silicon solar cell based on emitting electrode preparation through laser doping
A technology of solar cells and laser doping, applied in the field of solar cells, can solve the problems of high cost and cumbersome process, and achieve the effects of low cost, convenient industrialization, and easy mass production.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0026] The preparation method of the n-type crystalline silicon solar cell based on laser doping to prepare the emitter proposed by the present invention, the n-type monocrystalline silicon solar cell is taken as an example below to illustrate its preparation steps are as follows:
[0027] (1) Clean the crystalline silicon chip and make velvet, and spin-coat the front surface of the crystalline silicon chip with a concentration of 3.0% boric acid;
[0028] (2) Fix the crystalline silicon wafer on the laser workbench, adopt a pulse laser with a wavelength of 532nm, set the laser pulse frequency to 20-40KHz, scan speed to 200-400mm / s, and laser power to 3-4W, Irradiate the surface of the solar cell with a spot of light that reaches a micron-scale diameter after focusing to scan the surface to make an emitter, and clean it;
[0029] (3) Using Al 2 o 3 / SiO 2 The laminated dielectric film passivates the front and rear surfaces of the battery;
[0030] (4) SiNx anti-reflection ...
Embodiment 2
[0033] The preparation method of the n-type crystalline silicon solar cell based on laser doping to prepare the emitter proposed by the present invention, the n-type monocrystalline silicon solar cell is taken as an example below to illustrate its preparation steps are as follows:
[0034] (1) Clean the crystalline silicon chip and make velvet, and the concentration of spin coating on the front surface of the crystalline silicon chip is 5.0% boric acid;
[0035] (2) Fix the crystalline silicon wafer on the laser workbench, adopt a pulse laser with a wavelength of 355nm, set the laser pulse frequency to 20-50KHz, scan speed to 200-400mm / s, and laser power to 1-3W, Irradiate the surface of the solar cell with a spot of light focused to a micron-scale diameter for surface scanning to make an emitter and clean it;
[0036] (3) Using Al 2 o 3 / SiO 2 The laminated dielectric film passivates the front and rear surfaces of the battery;
[0037] (4) SiNx anti-reflection film is coa...
Embodiment 3
[0040] The preparation method of the n-type crystalline silicon solar cell based on laser doping to prepare the emitter proposed by the present invention, the following takes the n-type single-crystalline silicon solar cell as an example to illustrate the preparation steps as follows:
[0041] (1) Clean the crystalline silicon chip and make velvet, and the concentration of spin coating on the front surface of the crystalline silicon chip is 5.0% boric acid;
[0042] (2) Fix the crystalline silicon wafer on the laser workbench, adopt a continuous laser with a wavelength of 532nm, set the laser pulse frequency to 20-40KHz, the scanning speed to 200-400mm / s, and the laser power to 3-4W, Irradiate the surface of the solar cell with a spot of light that reaches a micron-scale diameter after focusing to scan the surface to make an emitter, and clean it;
[0043] (3) Using Al 2 o 3 / SiO 2 The laminated dielectric film passivates the front and rear surfaces of the battery;
[0044...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com