Phosphorus oxychloride remover for phosphorus diffusion furnace

A technology of phosphorus oxychloride and removal device, applied in the directions of diffusion/doping, crystal growth, post-processing, etc., can solve the problems of phosphorus oxychloride leakage, operator harm, etc.

Inactive Publication Date: 2013-02-20
陈功
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These ventilation devices are generally made of stainless steel or iron sheets, but phosphorus oxychloride is very corrosive, and usually these ventilation p

Method used

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  • Phosphorus oxychloride remover for phosphorus diffusion furnace
  • Phosphorus oxychloride remover for phosphorus diffusion furnace
  • Phosphorus oxychloride remover for phosphorus diffusion furnace

Examples

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Embodiment Construction

[0031] Such as figure 2 Shown is the overall structure of the phosphorus oxychloride removal device of the phosphorus diffusion furnace of the present invention, which includes a buffer tank 2, an exhaust pipe 3 and a sealed water tank 4, and also includes a Figure 7 Cooling tank 5 shown.

[0032] Such as image 3 and Figure 4 As shown, it is a phosphorus diffusion furnace furnace tube furnace cap 1, which includes a cylindrical quartz material cap body 10 with a closed bottom, and an outwardly protruding opening mouth 12 is provided at the bottom of the cap body. A quartz snap ring 13 is welded on the inner wall, and the opening extension is arranged between the bottom surface of the snap ring and the bottom wall of the cap body. A quartz handle 11 is welded to the outer wall of the bottom of the cap body. The length of the opening extension mouth 12 is controlled at 3-5cm, and the inner diameter of the opening extension mouth is controlled at 0.5-1cm. The thickness o...

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PUM

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Abstract

The invention discloses a phosphorus oxychloride remover for a phosphorus diffusion furnace, which comprises a buffer box and an exhaust tube, wherein the buffer box comprises a square buffer box body; a Teflon coating is applied onto the inner wall of the buffer box; the back side wall of the buffer box body is provided with a furnace tube opening; the front side of the buffer box body is open and is provided with an air-tight door; the right side of the air-tight door is hinged with the buffer box body; a locking structure is arranged between the left side of the air-tight door and the buffer box body; the air-tight door is provided with a diversion structure; the right side wall of the buffer box body is provided with an exhaust tube opening; the exhaust tube is a U tube; one end of the exhaust tube is provided with an air inlet, and the other end of the exhaust tube is provided with an air outlet higher than the air inlet, and connected with an exhaust fan; the furnace tube of the phosphorus diffusion furnace extends into the buffer box through the furnace tube opening; and the air inlet of the exhaust tube is communicated with the buffer box through the exhaust tube opening. The invention can quickly cool exhaust gas discharged from the diffusion furnace tube by using natural air and misty dilute ammonia water so as to avoid melting the Teflon coating of the exhaust tube, and can also quickly liquefy the phosphorus oxychloride in the exhaust tube.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor discrete devices and solar cells. Background technique [0002] Phosphorus diffusion is a necessary process for manufacturing PN junctions of semiconductor discrete devices, integrated circuit chips and solar cells. At present, the technology used in this process is thermal diffusion technology. Semiconductor discrete devices are mainly used to manufacture diodes, triodes, power devices, IGBTs and thyristors, etc. This series of products has sales of tens of billions in China, and the production capacity is very large. On the other hand, as the use of solar cells, silicon wafers are also widely used. More than 70% of solar cells in the world use silicon wafers as cells. In 2011, the production capacity of 25GW has been achieved, and the polycrystalline consumption has reached 180,000 tons, which is six times the semiconductor consumption, so the output of solar energy is greater than th...

Claims

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Application Information

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IPC IPC(8): C30B31/16
Inventor 陈功
Owner 陈功
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