Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell

A silicon nitride thin film and solar cell technology, applied in the field of solar cells, can solve problems such as lower conversion efficiency, lower output current, and light absorption loss, and achieve the effects of increased conversion efficiency, reduced reflection, and improved anti-reflection effect

Inactive Publication Date: 2012-07-04
HEFEI & SOLAR TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, silicon nitride with a high refractive index will cause serious light absorption loss, which will reduce the output current and lower the

Method used

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  • Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell
  • Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell
  • Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell

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Experimental program
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Effect test

Embodiment 1

[0030] The preparation process of the gradient anti-reflection silicon nitride thin film of the crystalline silicon solar cell provided in this embodiment is as follows ： Using a P-type substrate, the formation of n by phosphorus diffusion + Diffusion layer, using Roth&Rau board P 3200+ equipment (partial structure of which is as image 3 As shown in , the same below) PECVD process is used to set the power to 3500W, the temperature to 450°C, and the air pressure to 226Pa. The flow ratio of ammonia gas is 1:4, the flow ratio of silane and ammonia gas in the fifth and sixth quartz tubes is 1:6, and a layer of gradient silicon nitride anti-reflection coating with a refractive index from high to low is deposited, such as figure 2 As shown, screen-print aluminum paste and silver paste on the back of the silicon wafer, screen-print silver paste on the front, form metal contacts after sintering, and finally test and sort.

[0031] The graded silicon nitride anti-reflection coating...

Embodiment 2

[0033] The preparation process of the gradient anti-reflection silicon nitride thin film of the crystalline silicon solar cell provided in this embodiment is as follows ： Using a P-type substrate, the formation of n by phosphorus diffusion + Diffusion layer, using Roth&Rau plate P 3200+ equipment, using PECVD process to set the temperature at 430°C, the air pressure at 239Pa, the power of the first quartz tube is 2900W, the flow ratio of silane and ammonia is 1:2, and the power of the second quartz tube is 2900W , The flow ratio of silane and ammonia is 1:3, the power of the third quartz tube is 3000W, the flow ratio of silane and ammonia is 1:4, the power of the fourth quartz tube is 3000W, and the flow ratio of silane and ammonia is 1: 5. The power of the fifth quartz tube is 3100W, the flow ratio of silane and ammonia is 1:6, the power of the sixth quartz tube is 3100W, the flow ratio of silane and ammonia is 1:7, deposit a layer of refractive index from high to Low gradie...

Embodiment 3

[0036] The preparation process of the gradient anti-reflection silicon nitride thin film of the crystalline silicon solar cell provided in this embodiment is as follows ： Using an N-type substrate, the formation of n by phosphorus diffusion + Diffusion layer, using Roth&Rau plate P 3200+ equipment, using PECVD process to set the temperature at 400°C, the air pressure at 239Pa, the power of the first quartz tube is 2900W, the flow ratio of silane and ammonia is 1:2, and the power of the second quartz tube is 2900W , The flow ratio of silane and ammonia is 1:3, the power of the third quartz tube is 3000W, the flow ratio of silane and ammonia is 1:4, the power of the fourth quartz tube is 3000W, and the flow ratio of silane and ammonia is 1: 5. The power of the fifth quartz tube is 4000W, the flow ratio of silane and ammonia is 1:6, the power of the sixth quartz tube is 4000W, the flow ratio of silane and ammonia is 1:7, deposit a layer of refractive index from high to Low gradi...

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Abstract

The invention discloses a preparation process for a gradient antireflection silicon nitride thin film of a crystalline silicon solar cell. A phosphorus-diffused crystalline silicon chip is selected, and different microwave powers, different temperatures and different gas flow ratios are set in the heading direction of the silicon chip by adopting a plasma enhanced chemical vapor deposition (PECVD) process, so that the gradient antireflection silicon nitride thin film is formed, and the refractivity of the thin film is sequentially decreased from bottom to top, but does not have a remarkable boundary. The silicon nitride thin film prepared by the process has high gradient silicon nitride bottom layer refractivity, and directly contacts the surface of the silicon chip to achieve a good passivation effect; the silicon nitride thin film with the high bottom layer refractivity is thin, so that light absorption loss is low, and influence on the conversion efficiency of the crystalline silicon solar cell is low; and due to the adoption of the silicon nitride thin film with gradient refractivity, the reflection of light is reduced, an antireflection effect is improved, and the conversion efficiency of the crystalline silicon solar cell can be improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a preparation process of a gradient anti-reflection silicon nitride film for a crystalline silicon solar cell. Background technique [0002] One solution to improve the conversion efficiency of crystalline silicon solar cells is to reduce the reflectivity of the silicon wafer surface and increase the passivation effect of the surface. like figure 1 As shown, the current commercial solar cells use PECVD to deposit a layer of silicon nitride film, because the silicon nitride is rich in H+ bonds, and SiN X : H means that it can reduce the reflectivity and increase the passivation effect. At the same time, SiN X :H contains positive charges, which can push the minority carrier holes in the diffusion layer to the direction of the PN junction, and has a good field passivation effect. [0003] Considering that solar cells need to be packaged in packaging materials su...

Claims

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Application Information

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IPC IPC(8): C23C16/34
Inventor 谢忠阳朱生宾刘光王永丰
Owner HEFEI & SOLAR TECH
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