Method for manufacturing selective emitter solar cell from local laser melting phosphorosilicate glass

A technology of phospho-silicate glass and laser melting, applied in laser welding equipment, circuits, electrical components, etc., can solve the problems of open circuit voltage, short-circuit current drop, and affecting battery performance, etc. simple effect

Active Publication Date: 2011-06-29
HANWHA SOLARONE QIDONG
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Problems solved by technology

Under such high surface concentration and junction depth conditions, extremely high emission recombination will le

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  • Method for manufacturing selective emitter solar cell from local laser melting phosphorosilicate glass
  • Method for manufacturing selective emitter solar cell from local laser melting phosphorosilicate glass
  • Method for manufacturing selective emitter solar cell from local laser melting phosphorosilicate glass

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Embodiment Construction

[0029] reference figure 1 , The first step is to clean the wafer 1, remove the surface damage layer, and texture the surface: for single crystals, use 5% NaOH alkaline solution for pyramid texturing; for polycrystalline, use 1:5 (weight ratio) hydrogen The aqueous solution of hydrofluoric acid and nitric acid is isotropic texturing.

[0030] reference figure 2 In the second step, a tube furnace is used for phosphorus diffusion (or in-line diffusion method) to form an n-type layer 2 with a square resistance of 80Ω / □. At the same time, 80nm thick phosphosilicate glass 3 is formed on the surface. The phosphorus in the phosphosilicate glass The content is adjusted by the amount of phosphorus source introduced during the diffusion process, and the thickness of the phosphosilicate glass is adjusted by the amount of oxygen introduced during the diffusion process;

[0031] reference image 3 , The third step is to use the Q switch Nd:YVO 4 The 532nm wavelength laser scans the thermally ...

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Abstract

The invention discloses a method for manufacturing a selective emitter solar cell from local laser melting phosphorosilicate glass, which comprises the following steps of: texturing the surface of a chip; performing phosphorous diffusion by utilizing thermal diffusion, and generating the phosphorosilicate glass on the surface; diffusing the phosphorous element in the phosphorosilicate glass on a laser scanning part into the chip through local chip-melting; isolating the boundary; removing a damaged layer formed in the laser chip-melting process; removing the residual phosphorosilicate glass; forming a coating on the front surface; plating silver paste on the front surface of the chip in a screen printing mode, and obtaining a front electrode in a laser scanned area; plating the silver paste on a rear surface of the chip to form a back electrode, and plating aluminum paste on the rear surface of the chip in the screen printing mode to form a back electric field; and sintering the chip to make the metal electrode element and silicon in the chip eutectic. Only one diffusion process is present in the whole process, and the process is simple, has no damage to the silicon chip and has good gettering effect.

Description

Technical field [0001] The invention relates to a method for manufacturing selective emitter solar cells. Background technique [0002] New energy is one of the five most decisive technological fields in the development of the world economy in the 21st century. Solar energy is a clean, efficient and never exhausted new energy. In the new century, governments all over the world regard the utilization of solar energy resources as an important part of the national sustainable development strategy. The photovoltaic power generation has the advantages of safety, reliability, no noise, no pollution, less restriction, low failure rate, and easy maintenance. In recent years, the international photovoltaic power generation has developed rapidly, and the supply of solar wafers is in short supply. Therefore, improving the photoelectric conversion efficiency of solar wafers and the production capacity of solar wafers have become important issues. [0003] The conventional process uniform em...

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Application Information

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IPC IPC(8): H01L31/18B41M1/12B23K26/00
CPCY02P70/50
Inventor 魏青竹马跃陈文浚穆汉
Owner HANWHA SOLARONE QIDONG
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