Phosphorus diffusion technology of solar cell silicon wafer

A solar cell and phosphorus diffusion technology, which is applied in the field of phosphorus diffusion technology, can solve the problems of low light conversion efficiency of the battery, reduce the Isc and Uoc of the battery, and high concentration, so as to improve the light conversion efficiency, improve the uniformity of square resistance, and reduce the concentration. Effect

Inactive Publication Date: 2012-10-10
JIANGSU SHUNFENG PHOTOVOLTAIC TECH CO LTD
View PDF10 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the concentration of phosphorus on the surface of the silicon wafer after diffusion is too high, and the "dead ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] 1) Put the textured silicon wafer into the diffusion furnace tube, raise the temperature of the furnace tube to 730°C, the heating time is 600s, and at the same time inject 15000ml of oxygen;

[0016] 2) Keep the temperature in the furnace tube at 730°C constant for 600s, and inject 10000ml of oxygen;

[0017] 3) Variable temperature pre-deposition, the temperature is raised from 730°C to 770°C, nitrogen is 5000ml, source oxygen is 800ml, oxygen is 200ml, and the time is 720s;

[0018] 4) Main diffusion, variable temperature propulsion, temperature rises from 770°C to 830°C, nitrogen 10000ml, oxygen 2900ml, time 360s;

[0019] 5) Cool down, drop the temperature in the furnace tube to 750°C, 15000ml of nitrogen, and the time is 720s;

[0020] 6) Push the boat, the nitrogen is 15000ml, and the time is 300s.

Embodiment 2

[0022] 1) Put the textured silicon wafer into the diffusion furnace tube, raise the temperature of the furnace tube to 790°C, the heating time is 700s, and at the same time inject 10000ml of oxygen;

[0023] 2) Keep the temperature in the furnace tube at 790°C constant for 1200s, and inject 5000ml of oxygen;

[0024] 3) Variable temperature pre-deposition, raise the temperature from 790°C to 830°C, nitrogen 5000ml, source oxygen 1400ml, oxygen 200ml, time 1200s;

[0025] 4) Main diffusion, variable temperature propulsion, temperature rises from 830°C to 850°C, nitrogen 5000ml, oxygen 2000ml, time 600s;

[0026] 5) Lower the temperature, lower the temperature in the furnace tube to 810°C, the nitrogen gas is 15000ml, and the time is 1200s;

[0027] 6) Push the boat, the nitrogen is 15000ml, and the time is 600s.

Embodiment 3

[0029] 1) Put the textured silicon wafer into the diffusion furnace tube, raise the temperature of the furnace tube to 750°C, the heating time is 650s, and at the same time inject 12000ml of oxygen;

[0030] 2) Keep the temperature in the furnace tube at 750°C constant for 800s, and inject 5000ml of oxygen;

[0031] 3) Variable temperature pre-deposition, increase the temperature from 750°C to 800°C, 8000ml of nitrogen, 1000ml of oxygen, 500ml of oxygen, and 1000s;

[0032] 4) Main diffusion, variable temperature propulsion, temperature rises from 800°C to 850°C, nitrogen 8000ml, oxygen 2500ml, time 400s;

[0033] 5) Lower the temperature, lower the temperature in the furnace tube to 800°C, the nitrogen gas is 12000ml, and the time is 900s;

[0034] 6) Push the boat, the nitrogen is 12000ml, and the time is 500s.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a phosphorus diffusion technology of solar cell silicon wafer. The technology comprises firstly pre-depositing a thin and uniform P2O5 in changing temperatures (750 to 800 DEG C); and then performing a promoted two-step diffusing method in changing temperatures (800 to 850 DEG C). The low-temperature deposition can reduce concentration on the surface of the silicon wafer, decrease dead layer and lower dark current, and can reduce heat damage and heat defect under low temperature conditions in a relatively good way. According to invention, the technology has an open-circuit voltage (Uoc) higher than that of conventional technology. At the same time, the high temperature difference (50 to 80 DEG C) promotion can further improve P activity, and enables generation of more carriers, formation of relatively high-quality PN junctions, and great improvement of Uoc and Isc, thereby improving light conversion efficiency of cells.

Description

technical field [0001] The invention relates to a solar cell production process, in particular to a phosphorus diffusion process in the manufacturing process. Background technique [0002] With the development of industrialization, non-renewable energy sources such as electricity, coal, and oil are frequently running out. Energy issues have increasingly become a bottleneck restricting the development of the international society and economy. More and more countries have begun to implement the "Sunshine Plan" to develop solar energy resources and seek economic development. new impetus. Driven by the huge potential of the international photovoltaic market, the solar cell manufacturing industries of various countries are not only scrambling to invest huge sums of money to expand production, but also to establish their own research and development institutions to research and develop new battery projects to improve product quality and conversion efficiency. However, silicon waf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B31/18H01L31/18
CPCY02P70/50
Inventor 陈剑锋陆宁
Owner JIANGSU SHUNFENG PHOTOVOLTAIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap