Preparation method of Topcon structure solar cell

A technology for solar cells and equipment, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low battery efficiency and yield, unavoidable damage to the P+ layer, etc., and achieve the effect of low cost, low equipment requirements, and high efficiency

Inactive Publication Date: 2020-03-27
JIANGSU MICROVIA NANO EQUIP TECH CO LTD
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  • Abstract
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Problems solved by technology

[0004] However, there are many problems in the production process of the existing Topcon structure battery, for example: the back tunneling layer and the amorphous silicon production will have serious wrapping p

Method used

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Embodiment Construction

[0017] The present application will be described in detail below with specific embodiments. However, these implementations do not limit the present application, and any structural, method, or functional changes made by those skilled in the art based on these implementations are included in the protection scope of the present application.

[0018] The preparation method of Topcon structure battery of the present invention, comprises the steps:

[0019] S1. Provide prefabricated silicon wafers;

[0020] S2. Manufacturing tunneling silicon oxide, amorphous silicon and silicon oxide on the backside of the silicon wafer in sequence;

[0021] S3, clean the amorphous silicon around the plating, and then clean the front BSG and the silicon oxide on the back side; due to the protection of the front BSG on the P+ layer and the protection of the back side silicon oxide on the amorphous silicon, it is not necessary to clean the front side around the amorphous silicon. Will affect the ef...

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Abstract

The invention provides a preparation method of a Topcon structure solar cell. The preparation method comprises the following steps: S1, providing a prefabricated silicon wafer; S2, sequentially manufacturing tunneling silicon oxide, amorphous silicon and silicon oxide on the back surface of the silicon wafer; S3, cleaning the wound amorphous silicon, and then cleaning the front BSG and the back silicon oxide; S4, performing phosphorus diffusion on the amorphous silicon to form an n + layer; S5, cleaning phosphorosilicate glass on the back surface; S6, preparing passivation layers on the frontsurface and the back surface respectively; and S7, manufacturing an electrode.

Description

technical field [0001] The invention relates to the technical field of photovoltaic power generation, in particular to a preparation method of a topcon structure solar cell. Background technique [0002] In conventional passivated emitter back contact (PERC) solar cells, the atomic layer deposition (ALD) method is used to form a full-cover aluminum oxide (Al 2 o 3 ) passivation layer, but due to the Al 2 o 3 Due to the dielectric properties of the passivation layer, it is necessary to remove part of the passivation layer by laser grooving in the subsequent process to form a back surface structure of the partly metallized part of the passivation layer. [0003] In order to further reduce the rear recombination rate, realize the overall passivation of the rear, and eliminate the film opening process on the rear, the passivation contact technology has become a research hotspot in the industry. TOPCon (Tunnel Oxide Passivated Contact) technology is to prepare an ultra-thin t...

Claims

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Application Information

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IPC IPC(8): H01L31/20H01L31/0216
CPCH01L31/02167H01L31/202H01L31/208Y02E10/50Y02P70/50
Inventor 张密超李翔姚俊
Owner JIANGSU MICROVIA NANO EQUIP TECH CO LTD
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