Method for manufacturing back passivation point contact solar cell of aluminum slurry burning-through local thin film

A technology of solar cells and back passivation, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve problems such as undetermined process methods, and achieve the effect of reducing equipment investment, saving investment, and simple steps

Inactive Publication Date: 2014-08-20
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Although the cell structure was proposed by the University of New South Wales in Australia as early as the 1990s and obtained the world record of 25% crystalline silicon solar cells, a process method suitable for industrial production has not been determined.

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  • Method for manufacturing back passivation point contact solar cell of aluminum slurry burning-through local thin film

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Effect test

Embodiment 1

[0035] A method for preparing a back passivation point contact solar cell in which aluminum paste burns through a local film comprises the following steps:

[0036] (1) De-damage the silicon wafer and make texturing and cleaning: choose 156mmP-type single-crystal silicon wafer as the base material, and its resistivity is 0.5ohm·cm. After de-damaging the selected p-type silicon wafer, use Potassium hydroxide solution chemically etches the surface of the P-type silicon wafer at 45°C to prepare a pyramid-shaped suede surface, which is then cleaned with 0.5% hydrofluoric acid to remove surface impurities;

[0037] (2) Phosphorus diffusion: adopt the method of tubular phosphorus diffusion, specifically in the diffusion furnace at a temperature of 600 ° C, using POCl 3 Phosphorus is diffused on the front side of the silicon wafer to form an n-type layer, so that the square resistance of P-type crystalline silicon is 25ohm / sq, and the naturally formed phosphosilicate glass after diff...

Embodiment 2

[0048] A method for preparing a back passivation point contact solar cell in which aluminum paste burns through a local film comprises the following steps:

[0049](1) De-damage the silicon wafer and make texturing and cleaning: choose 156mm P-type single-crystal silicon wafer as the base material, and its resistivity is 2ohm·cm. After de-damaging the selected p-type silicon wafer, use 5% hydrogen The sodium oxide solution chemically etched the surface of the P-type silicon wafer at 80°C to prepare a pyramid-shaped suede surface, and then cleaned it with 1% hydrofluoric acid to remove surface impurities;

[0050] (2) Phosphorus diffusion: adopt the method of tubular phosphorus diffusion, specifically in the diffusion furnace at a temperature of 800 ° C, using POCl 3 Phosphorus is diffused on the front side of the silicon wafer to form an n-type layer, so that the square resistance of P-type crystalline silicon is 100ohm / sq, and the naturally formed phosphosilicate glass after ...

Embodiment 3

[0061] A method for preparing a back passivation point contact solar cell in which aluminum paste burns through a local film comprises the following steps:

[0062] (1) De-damage the silicon wafer and make texturing and cleaning: choose 156mm P-type single crystal silicon wafer as the base material, and its resistivity is 3ohm·cm, and use hydrogen with a mass fraction of 2.5% after de-damaging the selected p-type silicon wafer Potassium oxide solution chemically etches the surface of the P-type silicon wafer at 65°C to prepare a pyramid-shaped suede surface, which is then cleaned with hydrofluoric acid with a mass fraction of 5% to remove surface impurities;

[0063] (2) Phosphorus diffusion: adopt the method of tubular phosphorus diffusion, specifically in the diffusion furnace at a temperature of 700 ° C, using POCl 3 Phosphorus is diffused on the front side of the silicon wafer to form an n-type layer, so that the square resistance of P-type crystalline silicon is 50ohm / sq,...

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Abstract

The invention provides a method for manufacturing a back passivation point contact solar cell of an aluminum slurry burning-through local thin film. The method comprises the steps of damage removing of a silicon wafer, woolen manufacturing, cleaning, phosphorus diffusion, back phosphorosilicate glass removing, back polishing, phosphorosilicate glass removing and cleaning, back aluminum oxide / silicon nitride laminated thin film growing, front silicon nitride antireflection thin film growing, reverse printing of burning-through aluminum paste, drying, reverse printing of a back electrode and an aluminum layer, front printing of a silver grid line, sintering and testing. burning-through type aluminum paste can be adopted by back point contact of the cell, meanwhile, thin film perforating is achieved, aluminum silicon contact is achieved, a local aluminum back field is formed at the contact position, and therefore two processing steps (laser perforating of the thin film, and aluminum paste sintering and silicon contact) are reduced into one step (adopting of aluminum paste of the burning-through thin film, and needing no thin film perforating in advance), investment of laser equipment is saved, idle printing equipment is fully utilized, and the method has the practical significance.

Description

technical field [0001] The invention belongs to the field of crystalline silicon solar cell manufacturing, and relates to a technology for back passivation and back metallization of a crystalline silicon solar cell to burn through a local thin film, in particular to a back passivation point contact crystalline silicon for aluminum paste burning through a local thin film Method for preparing solar cells. Background technique [0002] Against the backdrop of increasingly prominent problems such as energy scarcity, resource shortage, and environmental pollution, the use of natural resources for solar power generation has been regarded as a countermeasure to solve the problems of global warming and fossil fuel depletion, and has been favored by countries all over the world. However, the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has bec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/022441H01L31/1804Y02E10/547Y02P70/50
Inventor 夏正月高艳涛崔会英钱亮何锐陈同银刘仁中董经兵张雪谢烜张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
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