Preparation method of N-type passivation contact solar cell

A solar cell, N-type technology, applied in the field of solar cells, can solve problems affecting cell efficiency and yield, and achieve the effects of reducing damage, avoiding bad appearance, and simplifying process

Active Publication Date: 2020-04-17
江苏杰太光电技术有限公司
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  • Abstract
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Problems solved by technology

The common method to prepare the n+ heavily doped polysilicon layer on the back surface is tubular high-temperature diffusion. This method cannot av...

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Embodiment 1

[0042] A kind of preparation method of N-type passivation contact solar cell of the present invention, the technical scheme of its preparation comprises the following steps:

[0043] (1) Select an N-type crystalline silicon substrate 1, and perform polishing treatment on both sides of the N-type crystalline silicon substrate 1; wherein, the N-type crystalline silicon substrate 1 has a resistivity of 3Ω·cm and a thickness of 160 μm;

[0044] (2) On the N-type crystalline silicon substrate 1 treated in step (1), an ultra-thin tunneling oxide layer 5 is grown on its back surface; A layer of intrinsic amorphous silicon layer 61 containing a microcrystalline phase is deposited on the upper surface, and part of the amorphous silicon is wrapped around the front surface to form a polysilicon wrapped coating 11; wherein, the composition of the tunneling oxide layer 5 is silicon dioxide, and its preparation method is High-temperature thermal oxidation method, the thickness of the tunnel...

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Abstract

The invention discloses a preparation method of an N-type passivation contact solar cell. The method sequentially comprises the following steps: performing double-sided polishing on an N-type crystalline silicon substrate; sequentially growing a tunneling oxide layer and an intrinsic amorphous silicon layer on the back surface; doping the intrinsic amorphous silicon layer; depositing a silicon nitride film on the back surface; performing texturing and boron diffusion on the front surface; removing the front surface and a borosilicate glass layer wound and expanded to the back surface; preparation of a passivation anti-reflection on the front surface; silver paste printing on the back surface; silver-aluminum paste printing on the front surface; and sintering and like so that preparation ofthe N-type passivation contact solar cell is completed. The problem of electric leakage caused by adopting a phosphorus diffusion process in the conventional process is solved, the step of activatingthe back doping source by high-temperature annealing is omitted, damage to the silicon substrate is reduced, process steps are reduced, production cost is reduced, and the silicon nitride passivationfilm is prepared by plate-type PECVD (plasma enhanced chemical vapor deposition) equipment and thus poor appearance caused by texturing of a clamping groove mark position during front texturing is avoided.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a preparation method of an N-type passivated contact solar cell. Background technique [0002] Solar cells are the basic devices that convert solar energy into electrical energy. With the continuous progress of solar cells, efficient cost reduction has become an important direction for the current industrialization of solar cells. High-efficiency structural design and improved manufacturing yield are the keys to achieve this goal. At present, in order to improve battery efficiency, a variety of battery structures have been developed, such as PERC, HIT, IBC, and TOPCon. Among them, TOPCon battery is a passivation contact battery. Its structure is to prepare an ultra-thin silicon oxide layer and high-doped Doped polysilicon layer, using the chemical passivation of silicon oxide and the field passivation of polysilicon layer can significantly reduce the recombination rate of mi...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/1804H01L31/186H01L31/1864Y02E10/547Y02P70/50
Inventor 陈嘉马丽敏包杰林建伟
Owner 江苏杰太光电技术有限公司
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