Low-voltage diffusion furnace-based ultra-low concentration POCl3 high-temperature diffusion method
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- HENGDIAN GRP DMEGC MAGNETICS CO LTD
- Publication Date
- 2016-12-07
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Abstract
Description
technical field
[0001] The invention relates to the field of solar cell preparation, in particular to an ultra-low concentration POCl based on a low-pressure diffusion furnace 3 high temperature diffusion method. Background technique
[0002] As the core technology in the production process of crystalline silicon solar cells, the diffusion process is an important link in the production of PN junctions. In order to make an ideal and uniform PN junction, we must conduct in-depth research and improvement on the diffusion process, because the quality of the PN junction has the most important impact on the conversion efficiency of the battery. The development of diffusion furnace technology also affects the progress of crystalline silicon solar cell technology to a large extent. Therefore, the current research on diffusion uniformity at home and abroad is mainly reflected in the improvement of diffusion furnace technology.
[0003] The improvement of the diffusion process can i...