Low-voltage diffusion furnace-based ultra-low concentration POCl3 high-temperature diffusion method

An ultra-low concentration, high temperature diffusion technology, applied in sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increasing the cost of solar cells, manufacturing difficulty, time-consuming consumables, etc., to reduce the carrier gas The effect of dosage and process run time, less carrier gas dosage, less surface dead layer

Active Publication Date: 2016-12-07
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are mainly diffusion methods such as back contact and selective emission junction, but these processes require high precision in alignment, and

Method used

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  • Low-voltage diffusion furnace-based ultra-low concentration POCl3 high-temperature diffusion method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Entering the boat: Send the textured silicon wafer (polycrystalline silicon wafer) into the diffusion furnace. After the temperature of the diffusion furnace is raised to 700°C, oxygen and large nitrogen are introduced for pre-oxidation. The pre-oxidation time is controlled at 5 minutes. The flow rate of nitrogen is 200sccm, the flow rate of large nitrogen is 800sccm, and the pressure in the furnace is 50mbar;

[0020] (2) Phosphorus deposition: adjust the temperature in the diffusion furnace to 700°C, and deposit small nitrogen, large nitrogen and oxygen carrying phosphorus sources under low pressure conditions for 8 minutes, and the pressure is 50mbar under low pressure conditions, POCl 3 The flow rate is 20 sccm, the flow rate of small nitrogen is 50 sccm, the flow rate of large nitrogen is 500 sccm, and the flow rate of oxygen is 100 sccm;

[0021] (3) Heating push junction: Under low pressure conditions, push knots at a temperature of 800°C and a temperature of...

Embodiment 2

[0025] (1) Entering the boat: Send the textured silicon wafer (M2 single crystal silicon wafer) into the diffusion furnace. After the temperature of the diffusion furnace is raised to 750°C, oxygen and nitrogen are introduced for pre-oxidation. The pre-oxidation time is controlled at 10min, the flow rate of oxygen is 800sccm, the flow rate of large nitrogen is 1000sccm, and the pressure in the furnace is 80mbar;

[0026] (2) Phosphorus deposition: adjust the temperature in the diffusion furnace to 760 ° C, and deposit small nitrogen, large nitrogen and oxygen carrying phosphorus sources under low pressure conditions for 15 minutes, and the pressure is 80 mbar under low pressure conditions, POCl 3 The flow rate is 30 sccm, the flow rate of small nitrogen is 70 sccm, the flow rate of large nitrogen is 700 sccm, and the flow rate of oxygen is 200 sccm;

[0027] (3) Heating push knot: Under low pressure conditions, push knots at a temperature of 820°C and a temperature of 850°C re...

Embodiment 3

[0031] (1) Entering the boat: Send the textured silicon wafer (M2 single crystal silicon wafer) into the diffusion furnace. After the diffusion furnace is heated to 800°C, oxygen and nitrogen are introduced for pre-oxidation. The pre-oxidation time is controlled at 20min, the flow rate of oxygen is 1000sccm, the flow rate of large nitrogen is 2000sccm, and the pressure in the furnace is 100mbar;

[0032] (2) Phosphorus deposition: adjust the temperature in the diffusion furnace to 800°C, and deposit small nitrogen, large nitrogen and oxygen carrying phosphorus sources under low pressure conditions for 20 minutes, and under low pressure conditions, the pressure is 100mbar, POCl 3 The flow rate is 100 sccm, the flow rate of small nitrogen is 100 sccm, the flow rate of large nitrogen is 1000 sccm, and the flow rate of oxygen is 500 sccm;

[0033] (3) Heating push knot: Under low pressure conditions, push knots at a temperature of 840°C and a temperature of 860°C respectively, car...

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Abstract

The invention discloses a low-voltage diffusion furnace-based ultra-low concentration POCl3 high-temperature diffusion method, which comprises the following steps of (1) entering of a boat; (2) phosphorus deposition; (3) heating knotting; (4) cooling oxidation; and (5) discharging out of the boat. Aiming at the technical defects in an existing diffusion technology, comprehensive consideration is carried out from the aspects of carrier gas consumption, sheet resistance uniformity and stability and the like; the overall diffusion technology is optimized; phosphorus diffusion of ultra-low concentration POCl3 is achieved by low-temperature deposition and high-temperature sub-step anaerobic propulsion modes in a low-pressure environment of 50-100mBar; and the concentration of the POCl3 is only 10% of that of a conventional process. The low-voltage diffusion furnace-based ultra-low concentration POCl3 high-temperature diffusion method has the characteristics of low carrier gas consumption, good sheet resistance and junction depth uniformity, few in surface dead layers and the like; the open-circuit voltage Uoc of a battery sheet can be obviously improved; the carrier gas consumption is reduced; the process running time is shortened; and the sheet resistance uniformity and stability are ensured.

Description

technical field [0001] The invention relates to the field of solar cell preparation, in particular to an ultra-low concentration POCl based on a low-pressure diffusion furnace 3 high temperature diffusion method. Background technique [0002] As the core technology in the production process of crystalline silicon solar cells, the diffusion process is an important link in the production of PN junctions. In order to make an ideal and uniform PN junction, we must conduct in-depth research and improvement on the diffusion process, because the quality of the PN junction has the most important impact on the conversion efficiency of the battery. The development of diffusion furnace technology also affects the progress of crystalline silicon solar cell technology to a large extent. Therefore, the current research on diffusion uniformity at home and abroad is mainly reflected in the improvement of diffusion furnace technology. [0003] The improvement of the diffusion process can i...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/225
CPCH01L21/2252H01L31/1804Y02P70/50
Inventor 孙涌涛彭兴董方
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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