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Manufacture method of selective front surface field N-type solar cell

A manufacturing method and a front surface field technology, applied in the field of solar photovoltaic power generation, can solve problems such as electrode difficulties, and achieve the effect of simple process

Inactive Publication Date: 2010-06-30
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using this method often presents difficulties in making electrodes by subsequent screen printing

Method used

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  • Manufacture method of selective front surface field N-type solar cell
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Effect test

Embodiment 1

[0053] image 3 It is the first technical solution of the selective front surface field N-type solar cell manufacturing method provided by the present invention, which specifically includes the following steps:

[0054] (a) Surface texturing and chemical cleaning of N-type semiconductor substrates

[0055] For N-type monocrystalline silicon substrates, use dilute sodium hydroxide or potassium hydroxide solution to make a pyramid-shaped light trapping structure on the substrate surface; for N-type polycrystalline silicon substrates, use a mixed solution of nitric acid and hydrofluoric acid on the substrate A pit-like light-trapping structure is made on the surface. Subsequently, the substrate is cleaned with diluted hydrochloric acid and hydrofluoric acid, respectively.

[0056] (b) High-temperature phosphorous diffusion forms a lightly doped N-type layer on the front surface

[0057] Phosphorus oxychloride is used as a dopant source, and the semiconductor substrate is diffu...

Embodiment 2

[0073] Figure 4 It is the second technical solution of the selective front surface field N-type solar cell manufacturing method provided by the present invention, which specifically includes the following steps:

[0074] (a) Texturing and chemically cleaning the surface of the N-type semiconductor substrate;

[0075] (b) High-temperature phosphorous diffusion forms a lightly doped N-type layer on the front surface;

[0076] (c) preparing a dielectric film on the front surface of the N-type semiconductor substrate;

[0077] (d) Form a p-type layer on the back surface during the high-temperature boron diffusion process, thereby obtaining a p-n junction on the back surface (using boron tribromide as a doping source, and performing p-type diffusion at a temperature of 800-1000°C);

[0078] (e) preparing silver electrodes and aluminum electrodes by screen printing on the back surface of the N-type semiconductor substrate, and performing high-temperature sintering;

[0079] (f) ...

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PUM

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Abstract

The invention discloses a manufacture method of a selective front surface field N-type solar cell, which is characterized in that a back surface p-n junction is formed by utilizing an aluminum-silicon alloying process and a high-temperature boron diffusion process, a front surface lightly doped N-type layer is formed by high-temperature phosphorous diffusion, a front surface local heavily doped N-type region is formed by laser doping, and a front electrode is manufactured on the heavily doped N-type region by utilizing a chemical plating method or an electroplating method. Compared with the traditional manufacture process, the invention has the advantages of simple process and low cost and does not need secondary contraposition.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic power generation, and in particular relates to a method for manufacturing a selective front surface field N-type solar cell. Background technique [0002] A solar cell is a semiconductor device that uses the photovoltaic effect to directly convert solar energy into electrical energy. Structurally speaking, a solar cell generally consists of a semiconductor substrate, a p-n junction located on the surface of the semiconductor substrate, high and low junctions, a dielectric film and metal electrodes. [0003] According to the different conductivity types of the substrate, solar cells can be divided into P-type and N-type solar cells. The P-type solar cell technology is mature and occupies a dominant position in the current solar cell market. However, the boron and oxygen content of the P-type solar cell is too high, and the boron-oxygen pair will lead to obvious performance degradation of the P-t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 沈辉杨灼坚梁宗存陶龙忠洪瑞江
Owner SUN YAT SEN UNIV
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