Boron diffusion method of crystalline silicon solar cell

A solar cell and diffusion method technology, applied in the field of crystalline silicon solar cell manufacturing, can solve the problems of reducing the concentration of impurities on the surface of the diffusion layer, uneven diffusion resistance, and affecting battery performance, so as to reduce the formation of boron-rich layers and improve diffusion Uniformity, the effect of improving battery performance

Active Publication Date: 2012-11-07
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is beneficial to remove the boron-rich layer formed during diffusion, but the oxidation process will reduce the surface impurity concentration of the diffusion layer, which is not conducive to the formation of good ohmic contact, and will lead to uneven diffusion resistance, which will eventually affect battery performance.

Method used

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  • Boron diffusion method of crystalline silicon solar cell
  • Boron diffusion method of crystalline silicon solar cell
  • Boron diffusion method of crystalline silicon solar cell

Examples

Experimental program
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Effect test

Embodiment 1

[0030] A boron diffusion method for a crystalline silicon solar cell, comprising the steps of:

[0031] (1) Put the silicon wafer with suede into the diffusion furnace tube, raise the temperature to 980°C, feed oxygen for 10 minutes, and the oxygen flow rate is 10L / min;

[0032] (2) Access to BBr 3 , O 2 and N 2 Boron diffusion is performed, where BBr 3 The flow rate is 800mL / min; O 2 The flow rate is 500mL / min; N 2 The flow rate is 10L / min; the boron diffusion time is 50min;

[0033] (3) Stop the power supply, keep warm for 10 minutes under nitrogen atmosphere, nitrogen flow rate 10L / min;

[0034] (4) Cool down, take out the silicon wafer, and complete the diffusion process.

Embodiment 2

[0036] A boron diffusion method for a crystalline silicon solar cell, comprising the steps of:

[0037] (1) Put the silicon wafer with textured surface into the diffusion furnace tube, and start to feed oxygen for 15 minutes after heating up to 900°C, and the oxygen flow rate is 10L / min;

[0038] (2) Heating up, when the temperature reaches 980°C, BBr is introduced 3 , O 2 and N 2 , where BBr 3 The flow rate is 800mL / min; O 2 The flow rate is 500mL / min; N 2 The flow rate is 10mL / min; the time is 50min;

[0039] (3) Stop the power supply, cool down to 900°C, keep warm for 10 minutes under nitrogen atmosphere, and nitrogen flow rate is 10L / min;

[0040] (4) Cool down, take out the silicon wafer, and complete the diffusion process.

Embodiment 3

[0042] A boron diffusion method for a crystalline silicon solar cell, comprising the steps of:

[0043] (1) Put the silicon wafer with suede into the diffusion furnace tube, start to feed oxygen after heating up to 800°C, continue to raise the temperature to 980°C within 30 minutes, and the oxygen flow rate is 10L / min;

[0044] (2) After the temperature reaches 980°C, BBr is introduced 3 , O 2 and N 2 , where BBr 3 The flow rate is 800mL / min; O 2 The flow rate is 500mL / min; N 2 The flow rate is 10mL / min; the time is 50min;

[0045] (3) Stop the power supply, cool down to 900°C, keep warm for 10 minutes under nitrogen atmosphere, and nitrogen flow rate is 10L / min;

[0046] (4) Cool down, take out the silicon wafer, and complete the diffusion process.

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PUM

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Abstract

The invention discloses a boron diffusion method of a crystalline silicon solar cell. The method comprises the following steps of: (1) putting a silicon chip which is felted and cleaned into a diffusion furnace tube, raising temperature to 800 to 1,000 DEG C, filling oxygen, and oxidizing for 1 to 30 min; (2) keeping the temperature in the step (1), or raising the temperature to 900 to 1,100 DEG C, and filling a boron source, the oxygen and nitrogen for boron diffusion; (3) stopping filling the source, keeping the temperature or reducing the temperature to 800 to 900 DEG C, and keeping the temperature for 5 to 50 min in the nitrogen atmosphere; and (4) reducing the temperature, taking out the silicon chip, and finishing the diffusion process. By adoption of the method, the uniformity of the boron diffusion can be improved, formation of a boron-rich layer is avoided or reduced, and the minority carrier lifetime of the silicon chip is prolonged; and meanwhile, high surface impurity concentration can be kept, and high ohmic contact is formed, so the performance of the cell is improved.

Description

technical field [0001] The invention relates to a boron diffusion method for crystalline silicon solar cells, belonging to the field of crystalline silicon solar cell manufacturing. Background technique [0002] Conventional fossil fuels are being exhausted day by day. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been widely commercialized. This is due to the extremely abundant reserves of silicon materials in the earth's crust. With excellent electrical and mechanical properties, silicon solar cells occupy an important position in the field of photovoltaics. Therefore, developing cost-effective silicon solar cells has become one of the main research directions of photovoltaic companies in various countries. [0003] In the preparation process of crystalline silicon solar cells, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B31/08
CPCY02P70/50
Inventor 殷涵玉王栩生章灵军
Owner CSI CELLS CO LTD
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