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Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique

A technology of screen printing and solar cells, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of complex process and high cost, and achieve the effect of simple manufacturing process, high production efficiency and high conversion efficiency

Inactive Publication Date: 2010-04-07
CHINA SUNERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But their common problem is that the process is more complicated, and compared with conventional P-type silicon solar cells, the cost is too high

Method used

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  • Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique
  • Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique
  • Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1) Remove the damaged layer of the silicon wafer, make texture,

[0020] 2) Boron diffusion, remove the front and edge boron diffusion layer, grow the back diffusion barrier layer,

[0021] 3) Phosphorus diffusion, removal of barrier layer, growth of silicon oxide or aluminum oxide passivation layer on the back, deposition of silicon nitride anti-reflection layer on both sides,

[0022] 4) Sintering of printed front and back electrodes.

Embodiment 2

[0024] 1) Remove the damaged layer of the silicon wafer, make texture, and grow the front diffusion barrier layer,

[0025] 2) Boron diffusion, removal of the barrier layer, growth of the back diffusion barrier layer,

[0026] 3) Phosphorus diffusion, removal of barrier layer, growth of silicon oxide or aluminum oxide passivation layer on the back, deposition of silicon nitride anti-reflection layer on both sides,

[0027] 4) Sintering of printed front and back electrodes.

Embodiment 3

[0029] 1) Remove the damaged layer of the silicon wafer, make texture,

[0030] 2) Phosphorus diffusion, remove the back and edge phosphorus diffusion layer, grow the front diffusion barrier layer,

[0031] 3) Boron diffusion, removal of barrier layer, growth of silicon oxide or aluminum oxide passivation layer on the back, deposition of silicon nitride anti-reflection layer on both sides,

[0032] 4) Sintering of printed front and back electrodes.

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Abstract

The invention discloses a method for manufacturing a high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique. The preparation steps are: carrying out frontal phosphorous diffusion or partial phosphorous diffusion on the N-shaped silicon chip, growing a passivation layer and an antireflection layer, manufacturing a frontal electrode, carrying out back boron diffusion on the N-shaped silicon chip, growing a passivation layer and an antireflection layer, and manufacturing a back electrode. The inventive method has simple manufacturing technique, low cost, small investment on equipment and high production efficiency, and most part of the manufacturing technique can be carried out on a common conventional cell production line.

Description

technical field [0001] The invention relates to a method for manufacturing a solar cell, in particular to a method for manufacturing an N-type double-sided crystalline silicon solar cell. Background technique [0002] At present, traditional solar cells use P-type crystalline silicon materials, form a pn junction by phosphorus diffusion on the front of the substrate, and deposit an anti-reflection film, and print aluminum paste on the back as the back field. Only the "single-sided" solar cells receive light from the front. For batteries manufactured by this method, the highest photoelectric conversion efficiency recognized by peers is about 17-18%, and there is very limited room for further improvement of cost performance on this basis. In recent years, it has been found that the minority carrier lifetime of P-type silicon Czochralski (CZ) materials will decline under light. So try to find other materials with better performance, such as super magnetic Czochralski (MCZ), ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王建波姚文杰解柔强黄海冰向妮倪志春王艾华赵建华
Owner CHINA SUNERGY CO LTD
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