Nano silicon boron slurry and method for preparing PERL solar battery by utilizing nano silicon boron slurry

A technology of nano-silicon-boron paste and solar cells, which is applied in the field of nano-materials to achieve the effect of low cost and simple process flow

Inactive Publication Date: 2015-05-20
苏州金瑞晨科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a nano-silicon boron paste and its application to the preparation of PERL solar cells, which can solve the problem of poor contact often occurring in PERC cells, improve cell efficiency, and upgrade PERC cells to PERL cells

Method used

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  • Nano silicon boron slurry and method for preparing PERL solar battery by utilizing nano silicon boron slurry
  • Nano silicon boron slurry and method for preparing PERL solar battery by utilizing nano silicon boron slurry
  • Nano silicon boron slurry and method for preparing PERL solar battery by utilizing nano silicon boron slurry

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Embodiment 1

[0032] Embodiment 1: according to process route one, as image 3 Shown:

[0033] (1) Complete the following process according to the normal PERC battery preparation process: 1. Silicon wafer cleaning and flocking; 2. POCl 3 Diffusion to prepare emitter; 3. Cleaning and back polishing; 4. Deposition of Al on the back 2 o 3 Passivation film; 5. Double-sided deposition of SiNx film;

[0034] (2) Utilize screen printing equipment to locally print the nano-silicon-boron paste on the passivation film after the (1) process; the composition of the nano-silicon-boron paste is: 80 parts of sandalwood and 20 parts of nano-silicon powder, nano-silicon The average particle size is 50 nm, and the boron content is 5%. The printing pattern of the boron paste is a group of squares parallel to the edge of the silicon wafer and evenly arranged. The length of the side is 100um, and the distance between adjacent sides is 500um. The thickness of the boron paste is 2.5um.

[0035] (3) Dry the ...

Embodiment 2

[0039] Embodiment 2: according to process route two, as Figure 4 Shown:

[0040] (1) According to the normal PERC cell preparation process, complete the front flocking and back polishing of the silicon wafer;

[0041] (2) Utilize screen printing equipment to locally print the nano-silicon boron paste on the back of the silicon wafer after the (1) process, that is, the polished surface; the composition of the nano-silicon boron paste is: 70 parts of sandalwood, 9 parts of terpineol, 1 part of ethyl cellulose, 20 parts of nano-silicon powder, the average particle diameter of nano-silicon is 70 nanometers, and the boron content is 8%. Printing boron paste is a group of square patterns parallel to the edge of the silicon wafer and evenly arranged, with a side length of 100um and a side distance of 500um.

[0042] (3) Dry the printed silicon wafer in an industrial infrared drying oven at a drying temperature of 170° C. and a drying time of 4 minutes.

[0043] (4) The silicon wa...

Embodiment 3

[0046] Embodiment 3: according to process route one, as image 3 Shown:

[0047] (1) Complete the following process according to the normal PERC battery preparation process: 1. Silicon wafer cleaning and flocking; 2. POCl 3 Diffusion to prepare emitter; 3. Cleaning and back polishing; 4. Deposition of Al on the back 2 o 3 Passivation film; 5. Double-sided deposition of SiNx film;

[0048] (2) Utilize screen printing equipment to locally print nano-silicon-boron paste on the passivation film after (1) process; the composition of nano-silicon-boron paste is: 60 parts of sandalwood, 19 parts of terpineol, 1 part of ethyl alcohol Base cellulose, 20 parts of nano-silicon powder, the average particle diameter of nano-silicon is 70 nanometers, and the boron content is 3%. The printing pattern of the boron paste is a group of squares parallel to the edge of the silicon wafer and evenly arranged, with a side length of 100um and a side distance of 500um. The thickness of boron past...

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Abstract

The invention discloses nano silicon boron slurry and a method for preparing a PERL solar battery by utilizing the nano silicon boron slurry and a PERL battery structure. A silk screen printing technology which is suitable for the industrialized mass production is adopted, the nano silicon boron slurry is printed on the surface of a silicon chip, and the local boron diffusion is completed by virtue of high temperature diffusion or laser doping process route. A boron tribromide gas diffusion source with high toxicity is avoided, and the corresponding complicated technological procedures such as masking, etching, washing and the like for realizing the local boron diffusion is avoided. Compared with a produced PERC battery, the upgrading of the PERC battery can be completed, and the battery efficiency can be improved by only adding a printer and a drying furnace to the production process of the PERL battery.

Description

technical field [0001] The invention belongs to the field of nano-materials, and in particular relates to a nano-silicon-boron paste and a method for preparing a PERL solar cell. Background technique [0002] Currently, the efficiency of ordinary P-type crystalline silicon solar cells is usually below 20%. Currently, a PERC cell with an efficiency higher than 20% is moving out of the laboratory for mass production. [0003] Different from ordinary P-type batteries, the key to PERC batteries lies in back passivation and point contact. Usually, one or more layers of dielectric films are deposited on the back of the battery to passivate the back surface of the silicon wafer. There are two main functions of the passivation film, one is to saturate the dangling bonds of the silicon atoms on the surface of the silicon wafer; the other is to establish a surface electric field. Thus, the surface recombination rate of minority carriers is reduced, and the photoelectric conversion ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/068H01L31/18
CPCH01L31/022425H01L31/068H01L31/18Y02E10/547Y02P70/50
Inventor 刘国钧蒋红彬沈晓东杨小旭
Owner 苏州金瑞晨科技有限公司
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