Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A preparation method of a TOPCon structure battery

A battery and pn junction technology, applied in the field of solar cells, can solve the problems of negative influence of battery conversion efficiency and complicated operation, and achieve the effects of improving performance, simplifying procedures and improving production efficiency

Inactive Publication Date: 2019-01-04
JIANGSU SHUNFENG PHOTOVOLTAIC TECH CO LTD
View PDF5 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, some battery manufacturers in China have applied this technology to the production of large-scale silicon wafer batteries. When preparing TOPCon batteries, most of them use LPCVD equipment when depositing silicon oxide layers and doped thin-film silicon layers. It is inevitable that there will be a phenomenon of winding plating, and this winding plating will have a certain negative impact on the conversion efficiency of the battery
[0004] In the existing technology, most of the special materials (such as SiCx, SiNx, etc.) are used as the mask layer when dealing with winding plating. This operation requires an additional process to make the mask, and the mask layer is removed after depositing a thin film silicon layer, which is cumbersome to operate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The present invention relates to the preparation method of TOPCon double-sided battery, and its concrete process is as follows:

[0030] 1) Select an N-type silicon wafer with a resistivity of 0.5-10Ω·cm, clean and remove the damaged layer, and prepare a pyramid suede surface with an alkaline solution;

[0031] 2) Use thermal diffusion method or spin coating or spraying method to carry out boron diffusion to prepare p+ layer to form pn junction, and perform high temperature treatment at 1000 ° C; grow a BSG layer with a thickness of 70nm or 80nm or 90nm;

[0032] 3) Single-sided acid cleaning and etching: the boron diffusion layer is used as the front side, and the back side of the silicon wafer is removed and etched on one side; the specific method is to use a chain cleaning machine to float the silicon wafer in a mass concentration of 23 at room temperature. % hydrofluoric acid solution, use hydrofluoric acid to corrode the SiO2 layer on the back of the silicon wafer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of a TOPCon structure battery, comprising the following steps: (1) cleaning and velvet making; (2) prepare that pn junction by boron diffusion and carrying out high-temperature treatment; (3) After high temperature treatment, the temperature is controlled to 850 DEG C-900 DEG C, a BSG layer with a thickness of 50 nm or more is grown on that surface ofthe silicon wafer by inlet oxygen; (4) carry out acid cleaning and etch on that back side with the boron diffusion layer as the front side; (5) prepare a tunneling oxide layer and a doped thin film silicon layer; (6) carry out alkali cleaning on that front surface to remove the excess polysilicon layer generated by the winding plating on the front surface; (7) Remove BSG / PSG; (8), double-sided passivation; (9) Screen printing sintering. The production process of the invention can remove the wrapping plating, simplifies the process and improves the product performance without separately increasing the preparation process of the mask.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a preparation method of a TOPCon structure cell. Background technique [0002] The Tunneling Oxide Passivated Contact (TOPCon) solar cell is a new type of silicon solar cell proposed by the Fraunhofer Institute for Solar Energy Research in Germany in recent years. The battery uses an n-type silicon wafer, and the back of the silicon wafer is covered with a layer of silicon oxide layer below 2nm as a passivation tunneling layer, and then covered with a layer of doped thin-film silicon layer to passivate the back of the battery, and the tunneling oxide layer is passivated. The basic battery structure of chemical contact solar cells is that the back structure is an n-type silicon wafer, a passivation tunneling layer, a doped n-type thin film silicon layer, and a metal electrode layer. When the battery is working, electrons tunnel through the n-type silicon wafer. The silicon ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 瞿辉徐春梅静静
Owner JIANGSU SHUNFENG PHOTOVOLTAIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products