Boron diffusion method of crystalline silicon solar cell

A solar cell and diffusion method technology, which is applied in the field of crystalline silicon solar cell manufacturing, can solve the problems of lattice distortion of silicon atoms, affect cell performance, reduce minority carrier lifetime, etc., and achieve the effects of easy operation, improving battery performance, and improving minority carrier lifetime.

Active Publication Date: 2012-11-07
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the concentration of boron atoms formed by the above-mentioned diffusion method gradually decreases from the surface of the silicon wafer to the interior of the silicon wafer, but the decrease is relatively slow, and the boron atoms with a higher concentration are distributed in a wider range.
However, the high concentration of boron

Method used

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  • Boron diffusion method of crystalline silicon solar cell
  • Boron diffusion method of crystalline silicon solar cell
  • Boron diffusion method of crystalline silicon solar cell

Examples

Experimental program
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Effect test

Embodiment 1

[0032] A boron diffusion method for a crystalline silicon solar cell includes the following steps:

[0033] (1) Put the suede silicon wafer into the diffusion furnace and heat it up to 900℃; pass the boron source, oxygen and nitrogen for boron diffusion, the diffusion time is 25 min; boron source BBr 3 The flow rate is 700mL / min, O 2 The flow rate is 600mL / min, and the nitrogen flow rate is 10L / min;

[0034] (2) In a nitrogen atmosphere, the temperature is increased to 1050°C at a rate of 10°C / min. During the heating process, N 2 The flow rate is 10L / min, and the temperature reaches 1050℃ to pass BBr 3 , Oxygen and nitrogen are diffused, the diffusion time is 40min; BBr 3 The flow rate is 50mL / min, O 2 Flow rate is 100mL / min, N 2 The flow rate is 10L / min;

[0035] (3) Keep the temperature of step (2) for boron diffusion, the diffusion time is 10 min; BBr 3 The flow rate is 1000 mL / min; the oxygen flow rate is 800 mL / min, and the nitrogen flow rate is 10L / min;

[0036] (4) Cool down and...

Embodiment 2

[0038] A boron diffusion method for a crystalline silicon solar cell includes the following steps:

[0039] (1) Put the suede silicon wafer into the diffusion furnace and heat it to 950℃; pass the boron source and oxygen to diffuse the boron, the diffusion time is 25 min; the boron source BBr 3 The flow rate is 700mL / min, O 2 The flow rate is 600mL / min, and the nitrogen flow rate is 10L / min;

[0040] (2) Stop the power source, keep at 950℃, keep for 40min under nitrogen atmosphere; N 2 The flow rate is 10L / min;

[0041] (3) Enter the boron source for boron diffusion, the diffusion time is 10 min; BBr 3 The flow rate is 1000 mL / min; the oxygen flow rate is 800 mL / min, and the nitrogen flow rate is 10L / min;

[0042] (4) Cool down and complete diffusion.

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Abstract

The invention discloses a boron diffusion method of a crystalline silicon solar cell, wherein the method comprises the following steps: (1), arranging a silicon chip subjected to felting and cleaning processes in a diffusion furnace pipe, heating to 900 DEG C to 1100 DEG C, introducing nitrogen, a relatively large amount of boron source and oxygen, and performing boron diffusion, wherein the diffusion time is 5min to 60min; (2), keeping the temperature in the step (1), introducing nitrogen, a relatively small amount of boron source and oxygen, and performing boron diffusion, wherein the diffusion time is 15min to 80min; (3), keeping the temperature in the step (1) or heating to 910 DEG C to 1100 DEG C, introducing nitrogen, a relatively large amount of boron source and oxygen, and performing boron diffusion, wherein the diffusion time is 2min to 30min; and (4) finishing the diffusion process. With the adoption of the boron diffusion method, the high impurity concentration is formed within small depth range of the surface of the silicon chip, so as to be beneficial to forming of excellent ohm contact; the impurity concentration of the large depth range of a diffusion layer is reduced; the auger recombination and combination generated by nudged defect are reduced, the minority carrier lifetime is prolonged, so the property of the cell is enhanced.

Description

Technical field [0001] The invention relates to a boron diffusion method for a crystalline silicon solar cell, belonging to the field of crystalline silicon solar cell manufacturing. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among the existing sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been commercialized on a large scale. This is because silicon materials have extremely rich reserves in the earth's crust. At the same time, compared to other types of solar cells, silicon solar cells With excellent electrical and mechanical properties, silicon solar cells occupy an important position in the photovoltaic field. Therefore, the research and development of cost-effective silicon solar cells has become one of the main research directions of photovoltaic companies in vari...

Claims

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Application Information

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IPC IPC(8): C30B31/06H01L31/18
CPCY02P70/50
Inventor 殷涵玉王栩生章灵军
Owner CSI CELLS CO LTD
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