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2results about How to "Achieve passivation" patented technology

Volatile additive-based perovskite thin film and preparation method and application thereof

PendingCN122094387AEffective control of crystallizationEffectively control crystallizationPhotovoltaic energy generationFilm baseElectrical battery
The invention belongs to the technical field of perovskite solar cells, and provides a perovskite thin film based on a volatile additive and a preparation method and application thereof. According to the perovskite thin film provided by the invention, the perovskite matrix and the volatile additive are used as main raw material components, and the volatile additive comprises at least one of a beta-diketone compound, a carboxylic acid compound, an amide compound and a nitrogen-containing heterocyclic compound. The volatile additive promotes crystallization of perovskite in a large-grain and highly preferred orientation mode, crystal growth can be effectively regulated and controlled in the annealing process, bulk phase or surface defect passivation is achieved, interface performance is optimized, and finally the high-quality perovskite thin film with larger grain size and remarkably reduced grain boundaries is successfully prepared. And the volatile additive does not remain in the film after volatilization. The perovskite thin film provided by the invention can be used for preparing a perovskite solar cell device.
Owner:GUANGDONG MINGYANG FILM TECH CO LTD

A K2CrO4-regulated SnO2 composite electron transport layer, a perovskite solar cell and its fabrication method

PendingCN122094384AHigh trap densityInhibition formationPhotovoltaic energy generationElectrical batteryElectronic band structure
This invention provides a method for preparing a K2CrO4-regulated SnO2 composite electron transport layer, comprising: S1 dissolving urea in deionized water, adding thioglycolic acid, hydrochloric acid solution and SnCl2·2H2O to the deionized water to obtain a SnO2 precursor solution; S2 immersing a pretreated conductive glass substrate in the diluted SnO2 precursor solution for a first heating reaction to obtain a deposited SnO2 conductive glass substrate; S3 adding a K2CrO4 aqueous solution to the deposited SnO2 conductive glass substrate for a second heating reaction to obtain a deposited SnO2 / K2CrO4 conductive glass substrate; and S4 washing and annealing the deposited SnO2 / K2CrO4 conductive glass substrate to form a K2CrO4-regulated SnO2 electron transport layer. Introducing K2CrO4 as an oxidizing additive during the chemical bath deposition process allows for the synergistic regulation of the crystallization process, electrical properties, and band structure of SnO2ETL. This results in a K2CrO4-regulated SnO2 electron transport layer with low trap density, high conductivity, and ideal energy level arrangement, significantly improving the photoelectric conversion efficiency of perovskite solar cells and enhancing their operational stability and lifespan.
Owner:SHANDONG UNIV OF SCI & TECH