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Solar cell back field laser pn isolation process

A solar cell and back field technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve problems such as loss of power generation area, reduction of photoelectric conversion efficiency of solar cells, surface pollution of solar cells, etc., and achieve reduction of minority carrier recombination centers , Improve photoelectric conversion efficiency and product qualification rate, reduce the effect of blue-black point aberration film

Active Publication Date: 2016-02-10
微山县顺扬贸易有限公司
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Problems solved by technology

[0004] The traditional laser PN isolation is to use laser scribing and groove method to achieve PN isolation on the front side of the silicon wafer after the screen is sintered. The disadvantage is that the dust generated by the laser groove is easy to pollute the surface of the solar cell and lose a part of the front side. As a result, the photoelectric conversion efficiency of solar cells decreases; with the advancement of technology, wet etching gradually replaces laser scribing technology, but wet etching generally needs to corrode the front emitter by 1 to 2mm by chemical liquid

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  • Solar cell back field laser pn isolation process
  • Solar cell back field laser pn isolation process
  • Solar cell back field laser pn isolation process

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with the accompanying drawings and embodiments. It should be noted that the following description is only for explaining the present invention and not limiting its content.

[0022] Such as image 3 As shown, the present invention is a solar cell back field laser PN isolation process, including steps: pre-cleaning texturing, diffusion, PN isolation, post-cleaning, plasma enhanced chemical vapor deposition (PECVD) deposition of silicon nitride, silk screen Printing and sintering, test sorting; the PN isolation adopts laser etching, the specific method is: on the back of the solar cell, use a fiber laser to perform edge grooves around the back surface of the silicon wafer at a rate of 100mm / s. The distance between the groove and the edge of the silicon wafer is 0.5 mm, and the depth of the groove is 10-15 μm, so as to realize PN isolation. The fiber laser has a wavelength of 1064nm and a frequency of 10...

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Abstract

The invention discloses a laser PN isolation process for a back surface field of a solar cell. The process comprises steps as follows: front cleaning and texturing, diffusion, PN isolation, post cleaning, silicon nitride deposition with a plasma enhanced chemical vapor deposition method, screen printing and sintering, and testing and sorting, wherein the PN isolation adopts laser etching and specifically comprises steps as follows: edge slotting is performed on the back surface of the solar cell with a fiber laser at a line scribing speed of 100-120 mm / s by surrounding the surface of the back surface of a silicon wafer, the distance between a slotting edge and the silicon wafer edge is 0.5mm, and the slotting depth is 10-15 mu m, so that PN isolation is realized. According to the process, a traditional wet etching process is replaced with laser isolation, and a traditional laser etching process is improved, so that the process requirement of removing an edge PN junction during the production process of solar cells can be met.

Description

technical field [0001] The invention relates to a laser PN isolation process, in particular to a solar battery back field laser PN isolation process. It belongs to the technical field of solar cell production. Background technique [0002] In the solar cell production process, the thermal diffusion process used, after the diffusion of phosphorus oxychloride, the front electrode and the back electrode are conductive under the connection of the edge PN, so the edge PN junction must be cleared by PN isolation technology. Traditional laser isolation is done after screen printing, which is prone to dust pollution and laser alignment deviation ( figure 1 ); Now the PN isolation technology used by most manufacturers in the production process is wet etching, which achieves the effect of PN isolation through chemical liquid corrosion, which can easily lead to problems such as incomplete edge etching and excessive loss of front light-receiving area ( figure 2 ). [0003] The effec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 梁兴芳冯强王步峰
Owner 微山县顺扬贸易有限公司
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