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Method for preparing germanium-on-insulator (GeOI) substrate

A germanium substrate and substrate technology, applied in the field of new semiconductor materials and devices, can solve the problems of poor quality and high interface state density, and achieve the effects of reducing the interface state density, ensuring practicability and improving the quality of the back interface

Inactive Publication Date: 2011-09-28
PEKING UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, no matter the GeOI substrate prepared by smart stripping or germanium enrichment has a common disadvantage, that is, the interface (back interface) between the upper germanium film and the buried oxide (BOX) layer is of poor quality, and there are a large number of dangling bonds. The interface state density is very high

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  • Method for preparing germanium-on-insulator (GeOI) substrate
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  • Method for preparing germanium-on-insulator (GeOI) substrate

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Embodiment Construction

[0025] The following examples illustrate the present invention, but these examples should not be construed as limiting the present invention.

[0026] Step 1, select semiconductor germanium substrate and silicon substrate, such as figure 2 Shown in (a); the germanium substrate and the silicon substrate are cleaned. First, the germanium substrate is organically cleaned, soaked and cleaned with acetone and ethanol in turn, and then rinsed with DI water to remove oil and organic pollutants on the germanium substrate. Then wash with hydrochloric acid, heat and boil in dilute hydrochloric acid, and then rinse with DI water to remove inorganic pollutants, metal particles, etc.; first use No. 1 cleaning solution (NH 4 OH:H 2 o 2 :H 2 (0=1:1:5˜1:2:7) to clean the silicon substrate, and then clean it with deionized water to remove particles and organic substances on the substrate. Then use No. 2 cleaning solution (HCl: H 2 o 2 :H 2 O=1:1:6~1:2:8) cleaning, and then cleaning wi...

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Abstract

The invention discloses a method for preparing a germanium-on-insulator (GeOI) substrate. In the method, a back interface is passivated in the process of preparing the GeOI substrate; and the method comprises the following steps of: providing a semiconductor germanium substrate and a silicon substrate respectively, cleaning the germanium substrate and the silicon substrate, and removing natural oxide layers on the surfaces of the germanium substrate and the silicon substrate; growing a layer of SiO2 on the silicon substrate; depositing a layer of SixNy on the SiO2; depositing SiO2 for bonding on the SixNy, and depositing fluoridized SiO2 (FSG) for bonding on the germanium substrate; performing surface activation treatment on the SiO2 on the SixNy and the fluoridized SiO2 (FSG) on the germanium substrate, and performing alignment bonding along activated surfaces; annealing; and thinning. By the method, the quality of the back interface of the GeOI substrate can be improved.

Description

technical field [0001] The invention belongs to the field of novel semiconductor material devices, and in particular relates to a method for preparing a germanium-on-insulator (GeOI) substrate. Background technique [0002] Integrated circuit technology has followed Moore's law for more than 40 years, and the method of increasing the working speed by reducing the geometric size of the device is facing the test of the physical limit of the transistor size. In order to continue to increase the operating speed of devices, new materials and structures need to be found. Due to its high carrier mobility, germanium is considered to be the preferred material for realizing next-generation high-speed MOSFETs. At room temperature (300K), the electron mobility of germanium material is 2.4 times that of silicon, and the hole mobility is 4 times that of silicon. At present, the substrates using germanium materials as channels include bulk germanium substrates, germanium-on-insulator (Ge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L21/20H01L21/02
Inventor 黄如林猛郭岳安霞张兴
Owner PEKING UNIV
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