Atomization device for preparing alloy metal powder

Abstract

The invention discloses an atomization device for preparing alloy metal powder. The atomization device comprises a body. A vacuum melting chamber and an atomization chamber are sequentially arranged in the body from top to bottom. A melting device and a heating device are arranged in the vacuum melting chamber. The heating device heats the melting device. The melting device comprises a liquid outlet. The liquid outlet communicates with the top of the atomization chamber through a diversion pipe. A gas spray nozzle is arranged in the atomization chamber and is connected with high-pressure inert gas through a pipeline. The gas spray nozzle sprays the high-pressure inert gas towards an outlet of the diversion pipe. An oxygen-containing gas pipeline and a gas inlet device connected with the oxygen-containing gas pipeline are arranged in the atomization chamber. The oxygen-containing gas pipeline conveys oxygen-containing gas into the atomization chamber through the gas inlet device. By means of the atomization device, the surface of the alloy metal powder can be passivated in the atomization process, and therefore the sphericity degree of copper, indium and gallium alloy powder and the phenomenon of the strong adhesion among the powder are controlled.

Description

technical field [0001] The invention relates to an atomizing device, in particular to an atomizing device for preparing alloy metal powder. Background technique [0002] At present, the alloy powders used in the field of solar energy are mainly prepared by gas atomization powder making equipment, which is mainly used to prepare various metal powders, because the melting points of the metal components in the alloy powders used in the solar energy field are very different. Large, for example, in the copper indium gallium alloy, the melting point of indium is 156.6°C, the melting point of gallium is 29.8°C, and the melting point of copper is 1083.4°C. In the alloy phase of copper indium gallium alloy powder, there are mainly indium-based alloy phase and copper gallium metal However, due to the low melting point of indium-based alloys and the large solid-liquid coexistence temperature range of copper-indium-gallium alloys, the solid-liquid coexistence temperature range reaches 2...

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Problems solved by technology

[0002] At present, the alloy powders used in the field of solar energy are mainly prepared by gas atomization powder making equipment, which is mainly used to prepare various metal powders, because the melting points of the metal components in the alloy powders used in the solar energy field are very different. Large, for example, in the copper indium gallium alloy, the melting point of indium is 156.6°C, the melting point of gallium is 29.8°C, and the melting point of copper is 1083.4°C. In the alloy phase of copper indium gallium alloy powder, there are mainly indium-based alloy phase and copper gallium metal However, due to the low melting point of indium-based alloys and the large solid-liquid coexistence temperature range of copper-indium-gallium alloys, the solid-liquid coexistence temperature range reaches 250-600°C, which leads to the current gas atomization powder making device manufacturing The obtained alloy powder has severe agglomeration and adhesion sites, and a large number of small satellite spheroids adhere to the surface of the alloy powder particles, which not only makes the yield of the alloy powder too low, but also leads to poor fluidity of the alloy powder, which affects the subsequent use of the alloy powder. For example, when spraying target materials, the blockage of the powder feeding system and uneven powder feeding often occur when conveying alloy powder, which also affects the performance of the final product.

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