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Preparation method of low-defect quasi-two-dimensional perovskite film based on methanesulfonic acid negative ion induction

An anionic, low-defect technology, applied in chemical instruments and methods, luminescent materials, photovoltaic power generation, etc., can solve problems such as grain growth obstruction and inefficiency, and achieve the effect of inhibiting non-radiative recombination and effective energy transfer paths

Active Publication Date: 2019-10-08
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, since the formation process of nanoscale quasi-2D perovskite films still has many uncontrollable factors, for example, the random spatial distribution of grains and the random distribution of multiphases, energy transfer may follow inefficient paths, and more Many defect-trapping states are incorporated, while grain growth is hindered by large organoammonium cations, leading to more nonradiative recombination

Method used

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  • Preparation method of low-defect quasi-two-dimensional perovskite film based on methanesulfonic acid negative ion induction
  • Preparation method of low-defect quasi-two-dimensional perovskite film based on methanesulfonic acid negative ion induction
  • Preparation method of low-defect quasi-two-dimensional perovskite film based on methanesulfonic acid negative ion induction

Examples

Experimental program
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Embodiment 1

[0020] In this example, see figure 1 and figure 2 , a preparation technology based on methanesulfonic acid anion-induced low-defect quasi-two-dimensional perovskite film, including the following steps:

[0021] a. Quasi-two-dimensional BA 2 Cs n-1 Pb n Br 3n+1 Preparation of perovskite precursor solution:

[0022] Weigh BABr, PbBr according to the molar ratio of 0.4:1:1.2 2 and CsBr, which were dissolved in anhydrous DMSO, were used as precursors of quasi-two-dimensional perovskites, where PEO was added at 3 wt% to improve the morphology of the film. On this basis, CsMeS was added to the precursor, which with PbBr 2 The molar ratios are 0%, 6%, 8% and 10%, respectively. Then, after heating at 80 °C for 10 min, BA was prepared on the substrate by one-step spin coating 2 Cs n-1 Pb n Br 3n+1 perovskite thin film. Filter all precursor solutions through a 0.45 μm polytetrafluoroethylene filter before use.

[0023] b. Quasi-two-dimensional BA 2 Cs n-1 Pb n Br 3n+1...

Embodiment 2

[0029] This embodiment is basically the same as Embodiment 1, especially in that:

[0030] In this embodiment, a preparation technology based on methanesulfonic acid anion-induced low-defect quasi-two-dimensional perovskite film includes the following steps:

[0031] a. Quasi-two-dimensional BA 2 Cs n-1 Pb n Cl 3n+1 Preparation of perovskite precursor solution:

[0032] Weigh BACl, PbCl according to the molar ratio of 0.4:1:1.2 2 and CsCl, which were dissolved in anhydrous DMSO, were used as precursors of quasi-two-dimensional perovskites, where PEO was added at 3 wt% to improve the morphology of the film. On this basis, CsMeS was added to the precursor, which with PbCl 2 The molar ratios are 0%, 6%, 8% and 10%, respectively. Then, after heating at 80 °C for 10 min, BA was prepared on the substrate by one-step spin coating 2 Cs n-1 Pb n Cl 3n+1 perovskite thin film. Filter all precursor solutions through a 0.45 μm polytetrafluoroethylene filter before use.

[0033...

Embodiment 3

[0039] This embodiment is basically the same as the aforementioned implementation, and the special features are:

[0040] In this embodiment, a preparation technology based on methanesulfonic acid anion-induced low-defect quasi-two-dimensional perovskite film includes the following steps:

[0041] a. Quasi-two-dimensional BA 2 Cs n-1 Pb n I 3n+1 Preparation of perovskite precursor solution:

[0042] Weigh BAI, PbI according to the molar ratio of 0.4:1:1.2 2 and CsI, which were dissolved in anhydrous DMSO, were used as precursors of quasi-two-dimensional perovskites, where PEO was added at 3 wt% to improve the morphology of the film. On this basis, CsMeS was added to the precursor, which with PbI 2 The molar ratios are 0%, 6%, 8% and 10%, respectively. Then, after heating at 80 °C for 10 min, BA was prepared on the substrate by one-step spin coating 2 Cs n-1 Pb n I 3n+1 perovskite thin film. Filter all precursor solutions through a 0.45 μm polytetrafluoroethylene fi...

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Abstract

The invention discloses a preparation method of a low-defect quasi-two-dimensional perovskite film based on methanesulfonic acid negative ion induction. According to the method, methanesulfonic acid (MeS) negative ions are led in an L2An-1MnX3n+1 perovskite precursor to adjust phase compositions, so that a more effective energy transfer way is generated. Crystal boundary and surface defect inactivation is achieved by the MeS negative ions, and non-radiative recombination is effectively restrained. The service life of an exciton of the prepared quasi-two-dimensional perovskite film is obviouslyprolonged, and three-dimensional perovskite crystal particles are obviously increased. CsMeS is added into quasi-two-dimensional metal halide perovskite precursor solution to adjust perovskite phasecompositions, so that more three-dimensional perovskite crystal particles are generated as compared with a traditional method, and the more effective energy transfer way is generated. According to themethod, mixing of perovskite crystal lattices in the used CsMeS is omitted, the crystal lattices only exist on the surfaces of the perovskite crystal lattices, crystal boundary and surface defect inactivation can be achieved by MeS negative ions in the CsMeS, and non-radiative recombination is effectively restrained.

Description

technical field [0001] The invention relates to a preparation method of a perovskite thin film, in particular to a preparation method of a quasi-two-dimensional metal halide perovskite thin film, which is applied in the technical field of photoelectric material or semiconductor material preparation technology. Background technique [0002] Quasi-two-dimensional metal halide perovskites with L 2 A n-1 m n x 3n+1 where L refers to a large aliphatic or aromatic alkylammonium cation, usually phenethylammonium (PEA), n-butylammonium (BA) or 1-naphthylmethylammonium (NMA) ; A is usually Cs, CH 3 NH 3 + or HC (NH 2 ) 2 + , M is usually Pb, X is usually Cl, Br, I. When L is introduced, the three-dimensional metal halide perovskite (APbX 3 ) in which the infinite octahedral network is separated, so that the metal halide perovskite layer sandwiched between two L barrier layers possesses different thicknesses. Thus, it increases the exciton binding energy to hundreds of meV...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06
CPCC09K11/06C09K2211/10Y02E10/549
Inventor 吴倩倩王浩然孔令媚曹璠申飘阳张建凤杨绪勇
Owner SHANGHAI UNIV
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