Double-layer anti-reflecting film of crystal silicon solar cell and preparation method thereof

A solar cell and anti-reflection film technology, applied in the field of solar cells, can solve the problems of limited photoelectric conversion efficiency, low refractive index, and poor reflection effect, and achieve low cost, low deposition temperature, and good anti-reflection effect

Inactive Publication Date: 2009-11-11
CENT SOUTH UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the low refractive index and poor anti-reflection effect limit t

Method used

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  • Double-layer anti-reflecting film of crystal silicon solar cell and preparation method thereof

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Embodiment 1

[0037] On the silicon-based substrate 1 surface, utilize the magnetron sputtering deposition method, the metal Ti target is the sputtering target, argon (Ar):oxygen (O 2 ) The gas flow ratio is 1-10, the sputtering pressure is 0.5Pa-2Pa, the sputtering power is 250W-350W, and a layer of TiO 2 The dense layer 2.1 has a thickness of 40-60 nm, and its refractive index at 600 nm wavelength is 2.7-2.9. Sputtering power changed to 100W ~ 200W, in TiO 2 Prepare a layer of TiO on the dense layer 2.1 2 The thickness of the loose layer 2.2 is controlled to be 60-80 nm, and the refractive index of the layer is 1.9-2.1 at a wavelength of 600 nm. Deposited quasi-bilayer TiO 2 The silicon substrate of the anti-reflection film, after being printed with electrode silver paste, undergoes conventional sintering at 400°C to 900°C, and the silicon substrate and dense TiO 2 SiO with a thickness of 1nm to 20nm is formed at the interface 2 passivation layer.

Embodiment 2

[0039] On the surface of the silicon-based substrate 1, the atmospheric pressure chemical vapor deposition method is used to form Ti(OC 3 h 7 ) 4 as the source material, Ti(OC 3 h 7 ) 4 The volume fraction is 0.5-2%; 2 It is the reaction gas, the volume fraction is 0.5~2%; as N 2 Gas is the carrying gas, the volume fraction is the balance, the deposition temperature is 500-700°C, and the holding time is 0.5 hours. The prepared TiO 2 The thickness of the dense layer is 40-60nm, and its refractive index at 600nm wavelength is 2.7-2.9. The deposition temperature is changed to 350-450°C, and the TiO 2 Prepare a layer of TiO on the dense layer 2.1 2 The thickness of the loose layer 2.2 is controlled to be 60-80 nm, and the refractive index of the layer at a wavelength of 600 nm is 1.9-2.1. Deposited quasi-bilayer TiO 2 The silicon substrate, after printing with electrode silver paste, undergoes conventional sintering at 400°C to 900°C, and the silicon substrate and dense ...

Embodiment 3

[0041] On the surface of the silicon-based substrate 1, using the plasma chemical vapor deposition method, Ti(OC 3 h 7 ) 4 as the source material, Ti(OC 3 h 7 ) 4 The volume fraction is 0.5-2%, with O 2 It is the reaction gas, the volume fraction is 0.5~2%; as N 2 Gas is the carrying gas, the volume fraction is the balance, and the deposition temperature is 500-700°C to prepare TiO 2 The thickness of the dense layer is 40-60nm, and its refractive index at 600nm wavelength is 2.7-2.9. The deposition temperature was changed to 300-400°C, and the TiO 2 Prepare a layer of TiO on the dense layer 2.1 2 The thickness of the loose layer 2.2 is controlled to be 60-80 nm, and the refractive index of the layer is 1.9-2.1 at a wavelength of 600 nm. Deposited quasi-bilayer TiO 2 After the silicon substrate is printed with electrode silver paste, it is conventionally sintered at 400°C to 900°C, and the silicon substrate and the dense layer of TiO 2 SiO with a thickness of 1nm to ...

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Abstract

The invention discloses a double-layer anti-reflecting film of a crystal silicon solar cell and a preparation method thereof. The double-layer anti-reflecting film is characterized in that the film consists of a loose layer TiO2 film, a compact layer TiO2 film and a SiO2 passivation layer in turn, wherein the SiO2 passivation layer is positioned between the compact layer TiO2 film and a silicon-based substrate. The preparation method comprises the following steps: depositing the compact layer TiO2 film and the loose layer TiO2 film on the right surface of the silicon-based substrate; and after electrode silver paste is printed, through conventional sintering at the temperature between 400 and 900 DEG C, forming the SiO2 passivation layer at an interface of the silicon-based substrate and the compact TiO2. A TiO2/TiO2, quasi double-layer anti-reflecting film of the invention is finished once by changing the depositing condition, is optimized on the process and equipment, and has better anti-reflecting effect compared with a single-layer anti-reflecting film.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a double-layer anti-reflection film for a crystalline silicon solar cell and a preparation method thereof, in particular to a double-layer anti-reflection film for a silicon-based solar cell with a passivation function and a method for preparing the same. Preparation. Background technique [0002] For Si-based solar cells, improving efficiency and reducing cost have become urgent problems to be solved. For monocrystalline silicon solar cells, the surface texture can extend the optical path of the emission area by 4n 2 times, n is the refractive index of the material in the emission area, which greatly increases the absorption efficiency of Si for light waves. Since the refractive index of silicon (n~3.5) is very different from that of air, the light wave still has 11% reflection loss at the interface. The common solution is to add an anti-reflection coating on the surface of ...

Claims

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Application Information

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IPC IPC(8): H01L31/0232H01L31/0216H01L31/18H01L31/054
CPCY02E10/50Y02P70/50
Inventor 周继承赵保星荣林艳黄迪辉
Owner CENT SOUTH UNIV
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