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Method for preparing crystal silicon solar cell local back contact

A technology of crystalline silicon solar cells and localized back contact, which is applied in the field of solar cells and can solve problems such as increased production costs, low productivity, and high cost of solar cells

Active Publication Date: 2009-02-04
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as an integral part of the overall energy structure of the society, the proportion of solar energy is still less than 1% at present. The main reason for this situation is that the cost of solar cells is too high
The disadvantage of this technology is that if the number of lasers is limited, the production rate is very low; in order to improve the production rate, enough lasers must be used, so that the production cost will be greatly increased

Method used

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  • Method for preparing crystal silicon solar cell local back contact
  • Method for preparing crystal silicon solar cell local back contact
  • Method for preparing crystal silicon solar cell local back contact

Examples

Experimental program
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Effect test

Embodiment 1

[0027] Such as figure 1 As shown, in step 1, the aluminum layer 2 is deposited on the back of the crystalline silicon substrate 1 by thermal evaporation; in step 2, the aluminum layer 2 is made into an anodized aluminum hole array 3 by anodizing, and the generated anodized aluminum holes must penetrate the entire Aluminum layer; step 3, using magnetron sputtering to deposit the back contact electrode 4 on the anodized aluminum hole array 3, and annealing in a hydrogen reduction atmosphere, so that the back contact electrode 4 through the anodized aluminum hole array 3 and the crystalline silicon liner Bottom 1 forms an ohmic contact.

Embodiment 2

[0029] Such as figure 2 As shown, step 1, adopting a boron diffusion process to prepare a back field structure 5 on the back of a p-type crystalline silicon substrate 1; step 2, using magnetron sputtering to deposit an aluminum layer 2 on the surface of the back field structure 5; step 3, The aluminum layer 2 is made into an anodized aluminum hole array 3 by anodizing, and the generated anodized aluminum holes should penetrate the entire aluminum layer; step 4, using thermal evaporation to deposit the back contact electrode 4 on the anodized aluminum hole array 3, and Annealing under vacuum makes the back contact electrode 4 form an ohmic contact with the back field structure 5 through the anodized aluminum hole array 3.

Embodiment 3

[0031] Such as image 3 As shown, step 1, using a plasma-assisted chemical vapor deposition (PECVD) process to deposit a single layer of silicon nitride dielectric passivation layer 6 on the back of the crystalline silicon substrate 1; step 2, using thermal evaporation in the dielectric passivation An aluminum layer 2 is deposited on layer 6; step 3, the aluminum layer 2 is made into anodized aluminum hole array 3 by anodizing, and the generated anodized aluminum hole should penetrate the entire aluminum layer; step 4, pass the anodized aluminum hole array 3 Perform wet chemical etching on the dielectric passivation layer 6 until the surface of the crystalline silicon substrate 1 is exposed; step 5, deposit the back contact electrode 4 on the entire surface, and anneal in a nitrogen atmosphere, so that the back contact electrode 4 is anodized The aluminum hole array 3 forms an ohmic contact with the crystalline silicon substrate 1.

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Abstract

Disclosed is a method for preparing a crystalline silicon solar cell local back contact, including the following steps: depositing an aluminium layer (2) on a crystalline silicon substrate (1); making the aluminium layer (2) into an anodised aluminium hole array (3) through anodic oxidation, wherein the anodised aluminium hole runs through the whole aluminium layer (2); after that, depositing a back contact electrode (4) on the anodised aluminium hole array (3) and then annealing so as to enable the anodised aluminium hole and the crystalline silicon substrate (1) to be engaged in ohmic contact with each other through the back contact electrode (4).

Description

Technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing local back contacts of crystalline silicon solar cells. Background technique [0002] The development and utilization of solar energy has become a strategic decision for sustainable energy development in countries all over the world. Both developed and developing countries have formulated mid- and long-term development plans, taking photovoltaic power generation as the hope of human future energy. However, as a component of the overall energy structure of society, solar energy currently accounts for less than 1%. The main reason for this situation is that the cost of solar cells is too high. At present, the retail price of crystalline silicon solar cell modules, which account for nearly 90% of the photovoltaic market, is still 4.83$ / Wp. The most important cost is the cost of silicon wafers with a thickness of 180-300 microns. In recent years, there has been a sharp sh...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 赵雷王文静
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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