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Crystalline silicon solar cell with local passivation contact on front surface and preparation method thereof

A crystalline silicon solar cell and backside passivation technology, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problem that the recombination rate of the metal contact area cannot be reduced, so as to improve the passivation effect, improve the conversion efficiency, and reduce the The effect of compound rate

Active Publication Date: 2020-02-21
SUZHOU TALESUN SOLAR TECH CO LTD +1
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

In other words, selective emitter technology can only reduce the recombination rate of non-metal contact areas, but not the recombination rate of metal contact areas

Method used

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  • Crystalline silicon solar cell with local passivation contact on front surface and preparation method thereof

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Embodiment Construction

[0036] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art. It should be noted here that the descriptions of these embodiments are used to help understand the present invention, but are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not constitute a conflict with each other.

[0037] This embodiment provides a crystalline silicon solar cell with front local passivation contact, which is a PERC cell. refer to figure 1 As shown, the crystalline silicon solar cell includes front electrodes 1, N + Type polysilicon layer 2, thin silicon oxide layer 3, front passivation layer 4, N-type silicon doped layer 5, P-type silicon sub...

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Abstract

The invention discloses a crystalline silicon solar cell with local passivation contact on a front surface and a preparation method thereof. The crystalline silicon solar cell comprises a front electrode, a front passivation layer, an N-type silicon doped layer, a P-type silicon substrate, a back passivation layer and a back electrode, wherein the back passivation layer is formed on a back surfaceof the P-type silicon substrate, the back electrode is formed on the back passivation layer and partially penetrates through the back passivation layer to form ohmic contact with the P-type silicon substrate, the N-type silicon doped layer is formed on a front surface of the P-type silicon substrate, a graphical silicon oxide thin layer is formed on the N-type silicon doped layer, an N+ type polycrystalline silicon layer is formed on the silicon oxide thin layer in a covering manner, and the front electrode penetrates through the front passivation layer, is formed on an upper surface of the N+ type polycrystalline silicon layer and forms ohmic contact with the N+ type polycrystalline silicon layer. The crystalline silicon solar cell is advantaged in that a composite rate of a metal contact region is further reduced while the composite rate of the non-metal contact area is reduced.

Description

technical field [0001] The invention belongs to the field of crystalline silicon solar cells, and relates to a crystalline silicon solar cell with front local passivation contact and a preparation method thereof. Background technique [0002] PERC (Passivated Emitter and Rear Cell) crystalline silicon solar cells use a dielectric layer as the back passivation layer, which can greatly reduce the recombination rate of the back surface and improve the photoelectric conversion efficiency of the cell. Compared with traditional aluminum back-field cells, PERC cells can achieve 1%-1.5% efficiency improvement. After the back surface recombination is effectively suppressed, the front surface recombination becomes the bottleneck of cell efficiency improvement. Therefore, many photovoltaic companies have begun to introduce selective emitter technology on PERC cells to reduce the front surface recombination rate and further improve cell efficiency. The selective emitter technology divi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0352H01L31/04H01L31/18
CPCH01L31/02168H01L31/035272H01L31/04H01L31/18H01L31/1868Y02E10/50Y02P70/50
Inventor 张树德魏青竹钱洪强李跃连维飞倪志春刘玉申杨希峰
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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